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    SM32200K

    Abstract: IS42SM32200K
    Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 200K-6BLI IS42SM32200K-75BLI 90-ball -40oC 2Mx32 IS42RM32200K-6BLI SM32200K IS42SM32200K

    IS42RM16160E

    Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
    Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball IS42RM16160E IS42VM16160E-75BLI IS42VM16160E is42vm16160

    SM32800E

    Abstract: IS42RM32800E
    Text: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32800E 32Bits IS42/45SM/RM/VM32800E IS42SM32800E-75BLI 90-ball -40oC 8Mx32 IS42RM32800E-6BLI IS42RM32800E-75BLI SM32800E IS42RM32800E

    Untitled

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM16160K Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160K 16Bits IS42/45SM/RM/VM16160K -40oC 16Mx16 IS42VM16160K-6BLA1 54-ball IS42VM16160K-75BLA1

    IS42SM16400K

    Abstract: No abstract text available
    Text: I S42SM/ RM/ VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/ VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF S42SM/ VM16400K 16Bits IS42SM/RM/ VM16400K L6400K-6BLI 54-ball IS42SM16400K-75BLI 4Mx16 IS42SM16400K

    SM16160E

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E IS42SM16160E-6BLI 54-ball IS42SM16160E-75BLI -40oC 16Mx16 IS42RM16160E-6BLI SM16160E

    IS42SM32200K

    Abstract: No abstract text available
    Text: IS42SM/RM/VM32200K Preliminary Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 90-ball -40oC 2Mx32 IS42RM32200K-6BLI IS42RM32200K-75BLI IS42SM32200K

    IS42RM32400G

    Abstract: No abstract text available
    Text: IS42SM/RM/VM32400G Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM/RM/VM32400G 32Bits IS42SM/RM/VM32400G -40oC 4Mx32 IS42SM32400G-6BLI IS42SM32400G-75BLI 90-ball IS42RM32400G

    IS42RM32800E

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM32800E Advanced Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32800E 32Bits IS42/45SM/RM/VM32800E -40oC 8Mx32 IS42SM32800E-6BLI IS42SM32800E-75BLI 90-ball IS42RM32800E

    SM32400G

    Abstract: IS42SM32400G-75BI is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G
    Text: IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32400G 32Bits IS42/45SM/RM/VM32400G IS42SM32400G-6BLI IS42SM32400G-75BLI IS42SM32400G-75BI 90-ball -40oC SM32400G is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G

    SM16200C

    Abstract: No abstract text available
    Text: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM16200C IS42RM16200C IS42VM16200C 16Bits IS42SM/RM/VM16200C -40oC 2Mx16 IS42VM16200C-6BLI IS42VM16200C-75BLI 54-ball SM16200C

    SM32160E

    Abstract: IS42SM32160E-75BLI
    Text: IS42/45SM/RM/VM32160E Advanced Information 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32160E 32Bits IS42/45SM/RM/VM32160E 90-ball -40oC 16Mx32 IS42RM32160E-6BLI IS42RM32160E-75BLI SM32160E IS42SM32160E-75BLI

    SM16160E

    Abstract: IS42RM16160E
    Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball SM16160E IS42RM16160E

    IS42RM32800E

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32800E 32Bits IS42/45SM/RM/VM32800E -40oC 8Mx32 IS42RM32800E-6BLI 90-ball IS42RM32800E-75BLI IS42RM32800E

    Untitled

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM16160K 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160K 16Bits IS42/45SM/RM/VM16160K IS42VM16160K-75BLI 54-ball -40oC 16Mx16 IS42VM16160K-6BLA1 IS42VM16160K-75BLA1

    IS42RM32400G

    Abstract: No abstract text available
    Text: I S42/ 45SM/ RM/ VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF VM32400G 32Bits RM/VM32400G 4Mx32 IS42RM32400G-6BLI 90-ball IS42RM32400G-75BLI IS42RM32400G-75BI IS42RM32400G

    IS42SM16200C

    Abstract: IS42SM
    Text: IS42SM16200C IS42RM16200C IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM16200C IS42RM16200C IS42VM16200C 16Bits IS42SM/RM/VM16200C IS42VM16200C-6BLI 54-ball IS42VM16200C-75BLI -40oC IS42SM16200C IS42SM

    IS42RM32100C

    Abstract: IS42RM32100C-75BLI IS42SM32100C
    Text: IS42SM32100C IS42RM32100C IS42VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42SM32100C IS42RM32100C IS42VM32100C 32Bits IS42SM/RM/VM32100C IS42VM32100C-6BLI 90-ball IS42VM32100C-75BLI -40oC IS42RM32100C IS42RM32100C-75BLI IS42SM32100C

    Untitled

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM32800K Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32800K 32Bits IS42/45SM/RM/VM32800K K-75BLI 90-ball -40oC 8Mx32 IS42VM32800K-6BLA1 IS42VM32800K-75BLA1

    Untitled

    Abstract: No abstract text available
    Text: I S42SM16200C I S42RM16200C I S42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/ VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF S42SM16200C S42RM16200C S42VM16200C 16Bits IS42SM/RM/ VM16200C M16200C-6BLI 54-ball IS42VM16200C-75BLI

    IS42RM16160E

    Abstract: No abstract text available
    Text: IS42/45SM/RM/VM16160E Advanced Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball IS42RM16160E

    IS42SM16400K-75BLI

    Abstract: No abstract text available
    Text: IS42SM/RM/VM16400K Advanced Information 1M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42SM/RM/VM16400K 16Bits IS42SM/RM/VM16400K -40oC 8Mx16 IS42SM16400K-6BLI IS42SM16400K-75BLI 54-ball

    SM16320E

    Abstract: IS42RM16320E-75BLI IS42SM16320E IS42VM16320E
    Text: IS42/45SM/RM/VM16320E Advanced Information 8M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16320E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16320E 16Bits IS42/45SM/RM/VM16320E -40oC 32Mx16 IS42VM16320E-6BLI IS42VM16320E-75BLI 54-ball SM16320E IS42RM16320E-75BLI IS42SM16320E IS42VM16320E

    IS42VM32800E

    Abstract: IS42VM32800E-75BLI IS42SM32800E-75BLI IS42RM32800E
    Text: IS42/45SM/RM/VM32800E Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM32800E 32Bits IS42/45SM/RM/VM32800E 90-ball -40oC 8Mx32 IS42RM32800E-6BLI IS42RM32800E-75BLI IS42VM32800E IS42VM32800E-75BLI IS42SM32800E-75BLI IS42RM32800E