45VM32160D
Abstract: No abstract text available
Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42/45VM32160D
32Bits
IS42/45VM32160D
-40oC
16Mx32
IS42VM32160D-6BLI
IS42VM32160D-75BLI
90-ball
45VM32160D
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CY8C38
Abstract: CY8C3866 Cypress touch panel BOSCH CONNECTOR CATALOG CY8C3866LTI-068 CY8C3866PVI-070 CY8C3866AXI-039
Text: PSoC 3: CY8C38 Family Datasheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C38 family offers a modern method of signal acquisition, signal
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CY8C38
CY8C3866
Cypress touch panel
BOSCH CONNECTOR CATALOG
CY8C3866LTI-068
CY8C3866PVI-070
CY8C3866AXI-039
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TRANSISTOR mcr 100-8
Abstract: No abstract text available
Text: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault
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MC33389
MC33389
100mA
200mA
125kBaud
MC33388
TRANSISTOR mcr 100-8
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CY8C3665
Abstract: 8051 8bit microcontroller cy8c3665lti-006
Text: PSoC 3: CY8C36 Family Data Sheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C36 family offers a modern method of signal acquisition, signal
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CY8C36
CY8C3665
8051 8bit microcontroller
cy8c3665lti-006
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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Untitled
Abstract: No abstract text available
Text: FS3862 Data Sheet Intelligent Charger Management Controller Rev. 1.1 Mar. 2006 Fortune Semiconductor Corp. FS3862-DS-11_EN CR-004 FS3862 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874
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FS3862
FS3862-DS-11
CR-004
MO-137
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Untitled
Abstract: No abstract text available
Text: REV. 1.2 FS3862-DS-12_EN Datasheet FS3862 Intelligent Charger Management Controller NOV. 2006 FS3862 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742
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FS3862-DS-12
FS3862
FS3862
MO-137
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Untitled
Abstract: No abstract text available
Text: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.08 05/2009 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most
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MC9S12XS256
MC9S12XS
MC9S12XS128
MC9S12XS64
HCS12
MC9S12XS256RMV1
S12XS
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Untitled
Abstract: No abstract text available
Text: FS3861 Data Sheet Intelligent Charger Management Controller Rev. 1.0 Dec. 2004 Fortune Semiconductor Corp. TD-0412012 CR-004 FS3861 Taipei Office: 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874
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FS3861
TD-0412012
CR-004
MO-137
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SM32200K
Abstract: IS42SM32200K
Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42SM/RM/VM32200K
32Bits
IS42SM/RM/VM32200K
200K-6BLI
IS42SM32200K-75BLI
90-ball
-40oC
2Mx32
IS42RM32200K-6BLI
SM32200K
IS42SM32200K
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IS42RM16160E
Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160E
16Bits
IS42/45SM/RM/VM16160E
-40oC
16Mx16
IS42SM16160E-6BLI
IS42SM16160E-75BLI
54-ball
IS42RM16160E
IS42VM16160E-75BLI
IS42VM16160E
is42vm16160
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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MX25L6445
Abstract: MX25L12845 MX25L12845E mx25l6445e MX25L12845EMI-10G MX25L6445* input id PM1428 MXIC MX25L12845EMI SRAM 134,217,728 x 4 MX25L12845EMI circuit
Text: MX25L12845E MX25L12845E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION PRELIMINARY P/N: PM1428 REV. 0.06, MAR. 05, 2009 1 MX25L12845E Contents FEATURES. 5
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MX25L12845E
PM1428
MX25L6445
MX25L12845
MX25L12845E
mx25l6445e
MX25L12845EMI-10G
MX25L6445* input id
PM1428
MXIC MX25L12845EMI
SRAM 134,217,728 x 4
MX25L12845EMI circuit
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5m48h
Abstract: S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128
Text: HCS12X Microcontrollers MC9S12XEP100RMV1 Rev. 1.19 12/2008 freescale.com Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: S12XE products in 208 MAPBGA packages
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HCS12X
MC9S12XEP100RMV1
S12XE
MC9S12XEP100
MC9S12XE
S12XE-Family
5m48h
S12XEP100
MC9S12XEP7682
xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h
2M53
S12XES384
3M25J
9S12XEG128
MC9S12XEQ512
XEG128
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EM78F651ND18J
Abstract: 1e9k 14 pin ic 7404 datasheet prescaler sp 4653 EM78F651ND EM78F651N EM78F651NSO18J EM78F651N-10 1P561
Text: EM78F651N 8-Bit Microcontroller Product Specification DOC. VERSION 1.5 ELAN MICROELECTRONICS CORP. December 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EM78F651N
EM78F651N-R
75Vdd
25Vdd
0810R
EM78F651N-R
EM78F651N-U
0810U
EM78F651ND18J
1e9k
14 pin ic 7404 datasheet
prescaler sp 4653
EM78F651ND
EM78F651N
EM78F651NSO18J
EM78F651N-10
1P561
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em78f652nd20j
Abstract: EM78F652N ph73 ph72 ICE652 SO18 EM78F652NSO20 EM78F652
Text: EM78F652N 8-Bit Microcontroller Product Specification DOC. VERSION 1.4 ELAN MICROELECTRONICS CORP. December 2007 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EM78F652N
em78f652nd20j
EM78F652N
ph73
ph72
ICE652
SO18
EM78F652NSO20
EM78F652
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BU218
Abstract: 2N3419 2N3421 BFX34 BSV64 BUX34 BUY80 BUY81 BUY82 BUY90
Text: NPN HIGH CURRENT SWITCHING TABLE11 NPN SILICON PLANAR HIGH C U R R E N T SW ITCHING T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation switching applications in Industrial and M ilitary equipments. This table should be referred to in conjunction w ith the LF Power Transistor Product Guide
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BUY82
10igh
BUY92
BUY91
BUY90
BUY81
BUY80
BU218
2N3419
2N3421
BFX34
BSV64
BUX34
BUY80
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TRANSISTOR GUIDE
Abstract: 2N3419 2N3421 BU217 BU218 BUY80 BUY81 BUY82 BUY90 BUY91
Text: NPN HIGH CURRENT SWITCHING TABLE11 NPN SILICON PLANAR HIGH C U R R E N T SWITCHING T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Product Guide
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BU218
20igh
BUY92
BUY91
BUY90
BUY82
BUY81
BUY80
TRANSISTOR GUIDE
2N3419
2N3421
BU217
BUY80
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Phico D - 0
Abstract: nec upd 1511 Phico D 0 phico d-0 94 PHICO phico d-0 Phico DO - 0 TQ00
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿tPD78370 A , 78372(A) 16 BIT SINGLE-CHIP MICROCOMPUTER The /iPD78372(A) contains a high-speed, high-performance 16-bit CPU and offers powerful arithmetic operation functions. An A/D converter and a real-time pulse unit, which provide the real-time control required in motor control,
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uPD78370
uPD78372
/iPD78372
16-bit
/PD78372
jiPD78370
/jPD78372
/jPD78P372
PD78372
U10642EJ
Phico D - 0
nec upd 1511
Phico D 0
phico d-0 94
PHICO
phico d-0
Phico DO - 0
TQ00
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Untitled
Abstract: No abstract text available
Text: SPT5220 @ SPT 10-BIT, 80 MWPS VIDEO DAC SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • 80 MWPS Pipelined Operation +5 V CMOS Monolithic Construction ±0,4 LSB Differential Linearity Error
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SPT5220
10-BIT,
RS-343A/RS-170
SPT5220
SPT5220SCN
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A10C
Abstract: A12C A14C A15C A17C CY74FCT162500T CY74FCT16500T
Text: fax id: 7046 CY74FCT16500T CY74FCT162500T 18-Bit Registered Transceiver Functional Description Features • Low pow er, pin c o m p a tib le re p la ce m e n t fo r A B T fu n c tio n s • FCT-C speed at 4.6 ns • P ow er-off d is a b le o u tp u ts p e rm its live in s e rtio n
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CY74FCT16500T
CY74FCT162500T
18-Bit
25-mil
CY74FCT162500T
A10C
A12C
A14C
A15C
A17C
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CY7C1333
Abstract: No abstract text available
Text: CYPRESS _ CY7C1333 6~Kx3? Flow-Thru SRAM with NoBL Architecture Features Functional Description • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic e M T 55L 64 L 32F • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w a it sta tes
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MT55L64L32F
66-MHz
50-MHz
100-pin
CY7C1333
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INTEL 80,82
Abstract: intel 80.82 intel 8082 INTEL 80-82 CY7C1325 ASYNCHRONOUS COUNTER
Text: CYPRESS CY7C1325 256K x 18 Synchronous 3.3V Cache RAM Features Functional Description • Supports 117-M Hz microprocessor cache systems with zero wait states • 256K by 18 common I/O • Fast ciock-to-output times — 7.5 ns 117-M Hz version • Two-bit wrap-around counter supporting either inter
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117-MHz
100-pin
CY7C1325
CY7C1325
INTEL 80,82
intel 80.82
intel 8082
INTEL 80-82
ASYNCHRONOUS COUNTER
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Untitled
Abstract: No abstract text available
Text: fax id: 1088 CY7C1333 ADVANCED INFORMATION 64Kx32 Flow-Through SRAM with NoBL Architecture Features Functional Description • S u p p o rts 6 6 -M H z bus o p e ra tio n s w ith zero w ait sta tes— D ata is tra n s ferred on ev e ry clock • In te rn ally se lf-tim e d o u tp u t b u ffe r co n tro l to elim in a te
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CY7C1333
64Kx32
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