CAT28LV65
Abstract: No abstract text available
Text: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
28LV65
8mmx13
500/Reel
250ns
300ns
350ns
28LV65
CAT28LV65
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atmel 438
Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237
Text: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: 104 Cycles
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0554C
06/98/xM
atmel 438
Atmel 546
atmel 446
ATMEL 1230
atmel 735
atmel 532
ATMEL 745
ATMEL 920
atmel 1044
ATMEL 1237
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toa-b21
Abstract: No abstract text available
Text: User’s Manual V850ES/HE3, V850ES/HF3, V850ES/HG3, V850ES/HJ3 32-bit Single-Chip Microcontrollers Hardware V850ES/HE3: PD70F3747 V850ES/HF3: μPD70F3750 V850ES/HG3: μPD70F3752 V850ES/HJ3: μPD70F3755 μPD70F3757 Document No. U18854EJ2V0UD00 2nd edition
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V850ES/HE3,
V850ES/HF3,
V850ES/HG3,
V850ES/HJ3
32-bit
V850ES/HE3:
PD70F3747
V850ES/HF3:
PD70F3750
V850ES/HG3:
toa-b21
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Untitled
Abstract: No abstract text available
Text: User’s Manual V850E/IF3, V850E/IG3 32-bit Single-Chip Microcontrollers Hardware V850E/IF3: PD70F3451 μPD70F3452 V850E/IG3: μPD70F3453 μPD70F3454 Document No. U18279EJ2V0UD00 2nd edition Date Published September 2008 N 2007 Printed in Japan [MEMO]
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V850E/IF3,
V850E/IG3
32-bit
V850E/IF3:
PD70F3451
PD70F3452
V850E/IG3:
PD70F3453
PD70F3454
U18279EJ2V0UD00
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MT16HTS51264HY-667
Abstract: MT47H512M8THM MT47H512M8
Text: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB1 MT16HTS51264H – 4GB For component specifications, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small outline dual in-line memory module
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200-Pin
MT16HTS25664H
MT16HTS51264H
200-pin,
PC2-3200,
PC2-4200,
PC2-5300
18-compatible)
Adj3900
09005aef821e5bf3/Source:
MT16HTS51264HY-667
MT47H512M8THM
MT47H512M8
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TFK 236
Abstract: TFK 4 232 TAA861A schaltungen 861 taa 861 tFK 229 236 TFK 36Tfk auo 002 TAA865A
Text: TAA 861 • TAA 861 A TAA 865 • TAA 865 A Monolithisch Integrierte Schaltungen Monolithic Integrated Circuits Anwendungen: O perationsverstärker in Regelungstechnik, NF-Schaltungen, Analog-Rechnertechnik, A u to e le ktro n ik usw. Applications: O perational am plifiers in autom atic co n tro l technique, audio circuits, analogue
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information applikation
Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK
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Untitled
Abstract: No abstract text available
Text: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns
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SY10L474-5/7
SY100L474-5/7
SY101L474-5/7
-180mA
10K/100K
SY10L/100L7101L474-7FCS
F24-1
SY10L/10017101L474-7JCS
J28-1
000113S
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SY10L474-7
Abstract: SY10L474 sy100l474 10L474
Text: * SY10L474-5/7 SY100L474-5/7 SY101 L474-5/7 LOW-POWER 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAC: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns
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SY10L474-5/7
SY100L474-5/7
SY101
L474-5/7
SY10L7100L/101L474
4096-bit
1024-words-by-4-bits
10K/100K
SY10L474-7
SY10L474
sy100l474
10L474
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Untitled
Abstract: No abstract text available
Text: f Z 7 SCS-THOMSON Ä 7# MK48C02A MK48C12A CMOS 2K X 8 ZEROPOWER SRAM • LOW CURRENT 1jiA @ 7 0 ’ C BATTERY INPUT FOR DATA RETENTION IN THE AB SENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC W R ITE P R O T E C T IO N DURING POW ER FAILURE ■ + 5 VOLT ONLY READ/WRITE
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MK48C02A
MK48C12A
MK48C02A
MK48C02A/12A
MK48C02
PDIP28
150ns
PLCC32
200ns
250ns
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Untitled
Abstract: No abstract text available
Text: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high
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KM48C2000A/AL/ALL/ASL
KM48C200QA/AL/ALLVASL
KM48C2000A/AL/ALL/ASL-5
KM48C2000A/AIVALL/ASL-6
110ns
KM48C2000A/AL/ALL/ASL-7
130ns
KM48C2000A/AL/ALL/ASL-8
150ns
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6301-1 prom
Abstract: No abstract text available
Text: Standard Performance Schottky Generic PROM Family 53/63xx-i Features/Benefits Description • Standard Schottky processing • Reliability proven nichrome fusible links qualified for MIL-M-38510 • Drop in compatible ROMs • PNP inputs for low input current
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53/63xx-i
MIL-M-38510)
53/63XX-1-series
256x4
1024x4
1024x8
6301-1 prom
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Untitled
Abstract: No abstract text available
Text: W24257AJ-8N ¡’inbond = 7 Electronics Corp. smt:7 32K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24257AJ-8N is a high speed, low power CMOS static RAM organized as 32768 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high
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W24257AJ-8N
W24257AJ-8N
28-pin
28-ptn
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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V17410Ais
HY51V17410A
HY51V1741
D36-00-MAY94
4b75Q
HY51V17410A
HY51V17410AJ
HY51V17410ASLJ
HY51V17410AT
HY51V1741OASLT
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W24L257AJ-15
Abstract: No abstract text available
Text: W24L257A íinbond Electronics Corp. 32K X 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L257A is a high-speed, low-power CMOS static RAM organized as 32768 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high
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W24L257A
W24L257A
28-pin
W24L257AJ-15
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Untitled
Abstract: No abstract text available
Text: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is
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HB56D51236
288-Word
36-Bit
HB56D51236B
HM514256JP)
256k-bit
HM51256CP)
72-pin
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 165AFT/AFTS-40.-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 ,1 94,304-WORD X 16-BIT EDO {HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)165AFT/AFTS is an EDO (hyper page) dynamic RAM organized as 4,194,304 words by 16
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TC5164
165AFT/AFTS-40
304-WORD
16-BIT
165AFT/AFTS
165AFT/AJTS
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Untitled
Abstract: No abstract text available
Text: C A T A LY S T Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
CAT28LV65
CAT28LV65NI-25T
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Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM44C4000L OOlblbfl Gñl ■ SMGK CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de
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KM44C4000L
KM44C4000L
110ns
KM44C4000L-7
130ns
KM44C4000L-8
KM44C4000L-6
150ns
47fiF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C1000 is a CMOS high speed 1,048,576 b it x 16 D ynam ic Random A ccess Memory. Its de sig n is o p tim ized fo r high pe rform ance a p p lica tio n s
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KM416C1000
KM416C1000
130ns
150ns
100ns
180ns
KM416C1000-7
KM416C1000-8
KM416C1000-10
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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CAT28LV65
Abstract: No abstract text available
Text: P relim inary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV65
64K-Bit
250/300/350ns
11b2b15
24-40-LEAD
CAT28LV65
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B084D
Abstract: DL074D 74LS74N transistor vergleichsliste TRANSISTOR 132D VEB mikroelektronik schlenzig B4761D B761D B176D
Text: Neue Halbleiterbauelemente KLAUS SCHLENZIG/ DIETER JUNG Operations verstärker LowPower- SchottkyReihe KLAUS SCHLENZIG/DIETER JUNG Neue Halbleiter bauelemente Operationsverstärker und Low-Power-Schottky-Reihe Militärverlag der D eutschen Demokratischen
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