Untitled
Abstract: No abstract text available
Text: PRELIMINARY PDM31038 1 Megabit 3.3V Static RAM 256K x 4-Bit Revolutionary Pinout Features Description • High-speed access times Com’l: 12, 15, 17 and 20 ns Ind’l: 15, 17 and 20 ns The PDM31038 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. This product is
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PDM31038
PDM31038
PDM31038SA
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TAA761A
Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,
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LD261
BPX81.
TAA761A
TDA4050B
BPW32
TAA761
FLH101
TCA335A
tda4050
TCA965 equivalent
tca965
transistor bc238
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SMB122N
Abstract: L7 diode QFN-64 thermistor R53 schematic diagram 48v battery charger lead QFN PACKAGE thermal resistance 12V to 42V hi amps dc dc converter step-up 12V to 48V hi amp dc to dc converter step-up FDC6420 TP1429
Text: SMB122/SMB122X Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining o Sequencing & digital soft start
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SMB122/SMB122X
SMB122N
L7 diode
QFN-64
thermistor R53
schematic diagram 48v battery charger lead
QFN PACKAGE thermal resistance
12V to 42V hi amps dc dc converter step-up
12V to 48V hi amp dc to dc converter step-up
FDC6420
TP1429
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Untitled
Abstract: No abstract text available
Text: SMB122/SMB122X Preliminary Information Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining
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SMB122/SMB122X
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TAA 761 A
Abstract: 85280-X 814100 TAA 761 Application fujitsu 814100 B8528
Text: M ay 1990 IP R O D U C T p r o f il e FUJITSU : MB85280-80/-10/-12 CMOS 4M X 8 FAST PAGE MODE DRAM MODULE The Fujitsu M B 85280 is a fully decoded, C M O S dynam ic random access m em ory D R A M m odule consisting o f eight M B814100 devices. The M B85280 is optim ized fo r tho se applications requiring high speed, high
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MB85280-80/-10/-12
B814100
B85280
30-pad
661REF
TAA 761 A
85280-X
814100
TAA 761 Application
fujitsu 814100
B8528
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1CE2
Abstract: TAA 761 A 82S129A Signetics Generic I fusing procedure
Text: Signetics 82S126A 82S129A 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION FEATURES APPLICATIONS The 82S126A and 82S129A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing
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82S126A
82S129A
82S129A
82S126A,
1CE2
TAA 761 A
Signetics Generic I fusing procedure
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C16100L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de sign is optimized for high performance applications
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KM41C16100L
KM41C16100L-6
KM41C16100L-7
KM41C16100L-8
110ns
130ns
150ns
KM41C16100L
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tca 761
Abstract: 44C4000-6 KM44C4000
Text: CMOS DRAM KM44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4000
44C4000
44Cching
24-LEAD
tca 761
44C4000-6
KM44C4000
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-428000A32
32-BIT
110ns
428000A32-60
428000A32-70â
b457525
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Untitled
Abstract: No abstract text available
Text: ^ 0 LG GMM7408200AS/SG-6/7/8 S e m ic o n 8,388,6 o s w o r d s x 40 b i t CMOS DYNAMIC RAM MODULE C o .,L td . Features Description The G M M 7408200AS/SG is an 8M x 40 bits dynamic RAM M ODULE which is assembled 20 pieces o f 4M x 4 bit DRAMs in 24 pin SOJ
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GMM7408200AS/SG-6/7/8
7408200AS/SG
408200AS/SO
7408200AS
7408200ASG
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 SERIES 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-428000A32
32-BIT
428000A32-60
428000A32-70
cycles/32
72-pin
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Untitled
Abstract: No abstract text available
Text: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?
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BR2865A
DIP28pin
BR2865A)
BR2864A
250ns
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Untitled
Abstract: No abstract text available
Text: HYMA6V32730E14HGTG 32MX72, 3.3V, 4K Ref, EDO Description The HYMA6V32730E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in
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HYMA6V32730E14HGTG
32MX72,
HYMA6V32730E14HGTG
32Mx72
16Mx4bit
32pin
16bit
48pin
20pin
168pin
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tantalum Capacitor A8 Jh
Abstract: No abstract text available
Text: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units tRAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ Fast Page Mode Operation ■ Single 5V ±10% Power Supply
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20-LEAD
tantalum Capacitor A8 Jh
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Untitled
Abstract: No abstract text available
Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4000
44C4000-7
130ns
150ns
44C4000-6
100/jF
24-LEAD
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM IDT7014S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Military: 20/25/35ns max. — Commercial: 12/15/20/25ns (max.)
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IDT7014S
20/25/35ns
12/15/20/25ns
900mW
52-pin
64-pin
IDT7014
IDT7014S
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AN 7112E
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS F U JIT SU 53E D 3 7 417b2 PROGRAMMABL SCHOTTKY? 256!-B ll READ?ONÜfMEMOR’ QQDÖ737 MB MB MB MB ñ 7111E/H 7112E/H/Y 7111L 7112L March 1986 Edition 2.0 SCHOTTKY 256 BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB 7111 and MB 7112 are high speed Schottky T T L electrically
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417b2
7111E/H
7112E/H/Y
7111L
7112L
20-PAD
LCC-20C-F02)
20PLCS)
C20004S-1C
AN 7112E
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Untitled
Abstract: No abstract text available
Text: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units *RAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ ■ ■ Fast Page Mode Operation
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20-LEAD
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Untitled
Abstract: No abstract text available
Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)
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IBM11M2645H
2Mx64
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: MH8M40AJD-6,-7 FAST PAGE MODE 335544320-BIT 8388608-WORD BY 40-BIT DYNAMIC RAM DESCRIPTION The M H 8 M 4 0 A J D is 8 3 8 8 6 0 8 -w o rd x 4 0 -b it d yna m ic R AM . PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer] This c o n s is ts o f tw e n ty in d u s try sta n d a rd 4 M x 4 d ynam ic
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MH8M40AJD-6
335544320-BIT
8388608-WORD
40-BIT)
16400A
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34P3210
Abstract: pdcr 921 "tape storage"
Text: Ai ABRIDGED VERSION s im tis u s k m s A TDK Group /C o m p any SSI 34P3210 Read Channel for High Density Floppy and Tape Storage Advance Information February 1996 FEATURES DESCRIPTION Complete zoned recording application support The SSI 34P3210 is a high performance BiCMOS
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34P3210
34P3210
fl253Tb5
pdcr 921
"tape storage"
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KM428C128
Abstract: No abstract text available
Text: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual
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KM428C128
128KX8
428C128
150ns
180ns
75ansfer
D01QL7S
40-PIN
KM428C128
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CY7B134
Abstract: CY7B135 7B135-35 f21l 48-pin TSOP I
Text: CY7B134 CY7B135 CY7B1342 ¥ CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance The CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port
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CY7B134
CY7B135
CY7B1342
7B1342
7B134
48-pin
7B135/7B1342
52-pin
CY7B134,
CY7B135,
7B135-35
f21l
48-pin TSOP I
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28c128
Abstract: No abstract text available
Text: PRELIMINARY CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 1 28K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 128 K X 8 bit Dual Port DRAM. It consists of a 1 2 8 K X 8 dynamic random
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KM428C128
428C128
40-PIN
28c128
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