tip off 0401 transistor using circuit free energy
Abstract: ghr 87 diode transistor 5-2736 E0C63158 E0C63256 E0C63358 S1C05251 AC 121 V TPI 121
Text: MF1329-02 CMOS CALLING NUMBER IDENTIFICATION RECEIVER IC S1C05251 Technical Manual S1C05251 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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MF1329-02
S1C05251
S1C05251
tip off 0401 transistor using circuit free energy
ghr 87 diode
transistor 5-2736
E0C63158
E0C63256
E0C63358
AC 121 V TPI 121
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DIP28
Abstract: LC33832M LC33832P LC33832S
Text: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory
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EN4430C
LC33832P,
ML-70/80/10
LC33832
DIP28
LC33832M
LC33832P
LC33832S
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78L033
Abstract: DB15 pcb connector female H11A 3.3v adapter db15 female to usb 78l03 H11A PDIUSBH11A VGA DB15 DB15 vga connector PDIUSBD11
Text: Philips Semiconductors Networking August 15, 2000 Philips H11A/D11 Evaluation Board User’s Manual Philips Semiconductors - Asia Product Innovation Centre Visit http://www.flexiusb.com
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H11A/D11
MIC5207-3
H11A/D11;
78L033
DB15 pcb connector female
H11A 3.3v
adapter db15 female to usb
78l03
H11A
PDIUSBH11A
VGA DB15
DB15 vga connector
PDIUSBD11
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SED2000FVB
Abstract: SED2800FVA seiko 64 s chip DIP-28pin SED2000F0A SED2800F DIP28pin SED2000F0 SED2000F SED2032F0B
Text: Other Drivers • High-voltage drivers Part number Supply voltage Output withstand Output current Clock frequency range voltage mA-typ. (MHz) (V) (V-max.) grid : 20 anode : 2 SED2000FVB Outputs Description grid : 20 anode : 40 SED2020F0A QFP5-80pin QFP1-46pin
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SED2000FVB
SED2020F0A
QFP5-80pin
QFP1-46pin
SED2020F0B
QFP2-44pin
SED2032F0B
QFP2-60pin
SED2040FVA
SED2000FVB
SED2800FVA
seiko 64 s chip
DIP-28pin
SED2000F0A
SED2800F
DIP28pin
SED2000F0
SED2000F
SED2032F0B
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SRM2B256SLMT10
Abstract: SRM2B256SLRMT SRM2B256SLMT SRM2B256SLMT55 SRM2B256SLMT70 SRM2B256SLTMT
Text: PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM ge lta o V n de tio Wi pera cts O odu Pr ● Wide Temperature Range ● Extremely Low Standby Current ● Access Time 100ns 2.7V /55ns s (4.5V) ● 32,768 Words x 8-bit Asynchronous • DESCRIPTION The SRM2B256SLMT is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access
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PF857-02
SRM2B256SLMT55/70/10
256K-Bit
100ns
/55ns
SRM2B256SLMT
SRM2B256SLMT10
SRM2B256SLRMT
SRM2B256SLMT55
SRM2B256SLMT70
SRM2B256SLTMT
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SRM2B257SLC10
Abstract: SRM2B257SLC70 DIP28pin SRM2B257SLM70 PF859-02
Text: PF859-02 SRM2B257SLC70/10 256K-Bit Static RAM ● Low Supply Current ● Access Time 100/120ns ● 32,768 Words✕8-bit Asynchronous ● Two Chip Select Terminals • DESCRIPTION The SRM2B257SLC70/10 is a 32,768 word✕8-bit asynchronous, static, random access memory fabricated using
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PF859-02
SRM2B257SLC70/10
256K-Bit
100/120ns
SRM2B257SLC70/10
SRM2B257SLC10
SRM2B257SLC70
DIP28pin
SRM2B257SLM70
PF859-02
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upd444c
Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238
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000-97-MEM-1
SRM2016C10/12
16K-Bit
SRM2016C/MT12
SRM2264L10/12
64K-Bit
-44pin-R1
81max
upd444c
SRM2016C12
SRM2264LC10
SRM2264lm10
SRM2B256SLMX55
SRM20100LRMT85
SRM2016C-12
SRM2016C
SRM2264LCT10
SRM20100LMT
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S1C05251
Abstract: V23 FSK Japan DTMF fsk cli circuit BELLCORE FSK BELL202 GR-30-CORE S1C05250 SIN227
Text: PF1243-01 S1C05251 CAS + FSK IC ge oltan V o Lowerati ts p c u O od Pr ● ITU V.23 & Bell 202 FSK Receiver ● Bellcore "CPE Alerting Signal" Detection ● BT "Idle Tone Alert Signal" Detection ● Low Voltage Operation • DESCRIPTION The S1C05251 CAS + FSK IC , an upgraded version of the S1C05250, is a CMOS IC for calling number
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PF1243-01
S1C05251
S1C05250,
GR-30-CORE,
S1C05251
V23 FSK Japan
DTMF fsk cli circuit
BELLCORE FSK
BELL202
GR-30-CORE
S1C05250
SIN227
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SRM2264lm10
Abstract: SRM2264L10 SRM2264L DIP-28 SRM2264L12
Text: SRM2264L10/12 CMOS 64K-BIT STATIC RAM ● Low Supply Current ● Access Time 100ns/120ns ● 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory
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SRM2264L10/12
64K-BIT
100ns/120ns
SRM2264L10/12
192-word
SRM2264L10
100pF
000-97-MEM-1
SRM2264lm10
SRM2264L10
SRM2264L
DIP-28
SRM2264L12
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Untitled
Abstract: No abstract text available
Text: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?
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BR2865A
DIP28pin
BR2865A)
BR2864A
250ns
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UPD444C
Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238
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DIP-24pin
OP2-24pin
DIP-24pln
OP-24pin
DIP-28pin
OP-28pin
UPD444C
SRM2264LC10
hm6116
SRM2264LCT10
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SRM2564M
Abstract: SRM25
Text: SRM2564 CMOS 64K-BIT STATIC RAM • Low Voltage and Low Supply Current • Access Time 1,000ns • 8,192 Words x 8-Bit Asynchronous • DESCRIPTION The SRM2564 is an 8,192 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
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SRM2564
64K-BIT
000ns
SRM2564
DIP-28pin
OP2-28pin
SRM2564M
SRM25
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BU8326
Abstract: BA4116 BA8215 A8206 single line telephone hybrid DIP18 BA1604
Text: ICs for Industrial Equipment Information/Communication Phones S p e a k e r, S p e a ke r / Telep ione line ECM Piezoetectric buzza Piezoelectric speaker Piezoelectric mie Block Diagram of Typical Applications — (qV ' Cross point mixer B U 8241(8X 8) B U 8242(6X 6)
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BU8710AKS
SQFP80
BA6566/F/FP
BA6569AFP/S
BA8216
BA8213/F/FP
BP3511
SIP18pin
BP35tl
100MHz
BU8326
BA4116
BA8215
A8206
single line telephone hybrid
DIP18
BA1604
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BA6805A
Abstract: VU meter circuit
Text: BA6800A/BA6800AF/BA6805A BA6800A BA6800AF BA6805A 1 6 /£ FLffl VU K 7 fM 16-Point Fluorescent Display Tube VU Scale Peak Hold Level Meter • W fé -tfj& 0 /'D im e n s io n s U n it:iT iin BA6800A/BA6800AF/BA6805A l i , Ig liC fr jSLlC <t % 1 6 & X 2 c h *^ < 7 > F L < £ fflV U @
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BA6800A/BA6800AF/BA6805A
BA6800A
BA6800AF
BA6805A
BA6800A/BA6800AF/BA6805A
16-Point
BA6800A,
BA6800A
BA6805A
VU meter circuit
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ic L70B
Abstract: SRM2B257SLC70 T70B
Text: EPSON PF859-01 S R M 2B 257S L C 70/10 256K-Bit Static RAM • • • • Low Supply Current Access Time 100/120ns 32,768 W ordsX 8-bit Asynchronous Two Chip Select Term inals I DESCRIPTION The SRM2B257SLC70/10 is a 32,768 wordX8-bit asynchronous, static, random access memory fabricated using
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PF859-01
SRM2B257SLC70/10
256K-Bit
100/120ns
SRM2B257SLC70/10
ic L70B
SRM2B257SLC70
T70B
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SOP48
Abstract: CF RM sot89 SOP38 14X14X2 epson QFP 216 14X14X1 45x45 mm bga 14X20X2 14x14x2.7 QFP13
Text: Plastic QFP Pin Count 44 46 48 52 60 64 80 100 120 128 144 160 176 184 208 216 232 240 256 304 Package code QFP 13 QFP4 QFP2 QFP6 QFP5 QFP12 QFP5 QFP6 QFP2 QFP6 QFP5 QFP13 QFP15 QFP6 QFP5 Plastic TQFP Body size mm 10X10X1.4 10X10X1.45 14X14X2 14X14X2.7 14X20X2.7
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QFP12
QFP13
QFP15
QFP14
12X12X1
14X20X2
14X14X1
SOP48
CF RM sot89
SOP38
14X14X2
epson QFP 216
45x45 mm bga
14x14x2.7
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BA7700
Abstract: BP3002 ba7703 BP50M05 51L05
Text: noHm Standard Hybrid ICs #For Telephone Units BP3000 Series Function Part No. B P 3002 Japan model BP3003 North America model BP3004 Japan model BP3005 North America model BP3008 Japan model BP3009 North America model Package R edial,pause,piezoelectric ringer and
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BP3000
BP3003
BP3004
BP3005
BP3008
BP3009
DIP28pin
A7703K.
DIP42pin
BA7700
BP3002
ba7703
BP50M05
51L05
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SED2000F
Abstract: SED2020F SED5620D SED2000FVB SED2800F SED2800FVA sed2032f
Text: ASSPs -4 O t h e r D r iv e rs Other Drivers iHigh-voltage drivers Pa rt n u m b e r Supply voltage range V Output withstand O u tp u t current Clock frequency voitage (MHz) (m A-typ.) (V-m ax.) O u tp u ts grid : 20 anode : 2 grid : 20 anode : 40 VFD anode/grid driver
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SED2000F
SED2020F
QFP5-80pin
-46pin
QFP2-44pin
SED2032F
SED2040FVA
QFP2-60pin
SED5620D
SED2000FVB
SED2800F
SED2800FVA
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DIP-28pin
Abstract: SRM2A256LLMX10 SRM2A256LLMX70 SRM2A256LLMX85 c2518 SRM2A256
Text: EPSON SRM2A256LLMX70/85/10 256K-Bit Static RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 32,768 W ordsX8-bit Asynchronous • DESCRIPTION The SRM2A256LLMX70/85/10 is a 32,768 wordsx8-bit asynchronous, static, random access memory fabricated
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SRM2A256LLMX70/85/10
256K-Bit
70ns/85ns/100ns
SRM2A256LLMX70/85/10
OP2-28pin
450mil)
-28pin*
SRM2A256LLMX70/85/i0.
-28pin-RV
DIP-28pin
SRM2A256LLMX10
SRM2A256LLMX70
SRM2A256LLMX85
c2518
SRM2A256
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DIP-48-PIN
Abstract: BP3303
Text: ROHM CO LTD 7650^ MOE D 0003273 4 E R H M •-V* ia tË iû ^ a iâ S â lM l T É lft ì I • Package List Appearance Lead specs, mm Single in-line (SIP) £=4±f p s W1 W2 Board wfdBì (iron) 10 Min. I 90 Max. 7 Min. I 38 Max. 15 Min. f 90 Max. 18 Min.
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DIP48pin
BP3304
BP3304)
BP3303)
BP3501
SlP20pin
DIP-48-PIN
BP3303
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SRM2264LCT
Abstract: 2264L SRM2264
Text: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
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SRM2264L
64K-BIT
100ns/120ns
SRM2264Lio/i2
SRM2264Lio
100ns
120ns
100ns
SRM2264LCT
2264L
SRM2264
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2b256
Abstract: No abstract text available
Text: EPSON PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM • • • • Wide Temperature Range Extremely Low Standby Current Access Time 100ns 2.7V /55ns (4.5V) 32,768 Words x 8-bit Asynchronous I DESCRIPTION The SRM 2B256SLM T is a low voltage operating 32,768 w ordsX 8-bit asynchronous, static, random access
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PF857-02
SRM2B256SLMT55/70/10
256K-Bit
100ns
/55ns
2B256SLM
SRM2B256SLMT
DIP-28pin
2b256
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 'SAiiYOl 256 K 32768 words x 8 bits Pseudo-SRAM Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V pow er supply and is organized as 32768 words x 8 bits. By using memory
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EN4430C
LC33832P,
ML-70/80/10
LC33832
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SRM20257
Abstract: SRM20257LM10
Text: SRM20257Lio/i2 CMOS 256K-BIT STATIC RAM • • • • Low Supply Current Access Time 100ns/120ns 32,768 Words x 8-Bit Asynchronous Two Chip Select Terminals DESCRIPTION The SRM20257Lio/i2 is a 32,768 word x 8-bit asynchronous, static, random access memory fabricated using
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SRM20257Lio/i2
256K-BIT
SRM20257Lio/i2
100ns/120ns
SRM20257
SRM20257LM10
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