TAA 691 Search Results

Contextual Info: XICOR INC S E E J> T T 4 1 7 4 3 0 0 0 3 0 4 b Ö6T M X I C Advance Information XM20C64S 64K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES High Speed: tAA = 55 ns NO! Batteries!! AUTOSTORE™ NOVRAM — Automatically Stores RAM data to E2PROM upon Power-fail Detection

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

424260-60

Abstract: TAA 691 uPD42S4260-60 UPD424260-60 P40L PD424260
Contextual Info: DATA SHEET I V I F f " / M O S I N T E G R A T E D C IR C U IT />PD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /jPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynam ic RAMs. The fast pago mode

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿ / P D 4 2 S 4 2 1 A , 4 2 4 2 1 A 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /JPD42S4210A, 424210A are 262 144 words by 16 bits dynamic CMOS RAMs with optional hyper page

nec 4216400

Abstract: 7400g PD4216400
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¡uPD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The JJPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

D4264400

Abstract: D42644
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability

Contextual Info: SAMSUNG ELECTRONICS INC b?E D KM418V256A/AL/ALL • 7=^4142 DDISÌ'IT Q15 ■ SriGK CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418V256A/AL/ALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access

Contextual Info: •HYUNDAI H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

TAA 691

Contextual Info: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYMA6V16733E14HGTG 16mx72, 3.3V, 8K Ref, EDO Description The HYMA6V16733E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin

100 microfarad 20v capacitor

Abstract: minitan capacitor, 22 microfarad 50v radial capacitor 10MF 35v microfarad surface mount capacitor 47 100 microfarad 20v tantalum capacitor 476 Tantalum Capacitor 476 capacitor capacitor 10mf 16v AVX taa
Contextual Info: Tantalum Leaded Capacitors AVX Tantalum Ask The World Of Us As one of the world’s broadest line leaded tantalum suppliers, and the major radial tantalum manufacturer, it is our mission to provide First In Class Technology, Quality and Service, by establishing

Contextual Info: KM44C4004B S CMOS D R AM ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

KM41C16000

Abstract: TAA 691
Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM 41C 16000-6 • • • • • • • • • • tR A C tC A C tR C 60n6 15ns 1 10ns KM 41C 16000-7 70ns 20ns 130ns KM 41C 160 0 0-8

TAA 691

Contextual Info: CMOS DRAM KM44C4102A/AL/ALL/ASL 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 4 C 4 1 0 2 A /A L /A L L /A S L is a h ig h • Performance range: s p e e d C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m

Contextual Info: KM418V256A/AL/ALL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM418V256A/AL/ALL-7 70ns 20ns 130ns KM418V256A/AL/ALL-8 80ns 20ns 150ns • • • • • • • • •

p181 4 pin

Abstract: 511000 dram S511000 TC 511000
Contextual Info: MOSEL_MS511000 may isso 1,048,576 x 1 Fast Page Mode CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Available in 70/80/100/120 ns The M O SEL M S511000 is a CM OS dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M S511000 has been designed for m ainfram e, buffer memory,

TFK 082

Abstract: uPD424210A-60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿/P D 4 2 S 4 2 1 0 A , 4 2 4 2 1 0 A 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription T h e /JP D 4 2S 4 2 1 0A , 4 2 4 2 1 0 A a re 262 144 w o rd s by 16 bits d y n a m ic C M O S R A M s w ith o p tio n a l h y p e r p a g e

Contextual Info: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: GM71C16400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 71C 16400A is the new generation dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4 Bit. G M 71C 16400A has realized higher density, higher perform ance and various functions by

uPD424400

Abstract: UPD424400-60 upd424400-70 PD424400 UPD424400LA-60
Contextual Info: N EC MOS INTEGRATED CIRCUIT /¿PD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /jPD424400 is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption. These are packed in 26-pin plastic TSOP II , 26-pin plastic SOJ and 20-pin plastic ZIP.

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

HYC532100

Abstract: jeida dram 88 pin
Contextual Info: “H Y U N D A I HYC532100 Series 1Mx32 DRAM CARD DESCRIPTION The HYC532100 is the DRAM memory card consisting of eight HY514400ALTbuilt in the metal plate housing. The Hyundai DRAM card is optimized for the applications such as buffering, main and add-in memory in the portable

MSM51V17100

Contextual Info: O K I Semiconductor MSM51 V17100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: HM5117800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-632B Z Rev. 2.0 Dec. 5,1996 Description The Hitachi HM5117800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800 offers Fast Page Mode