IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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100 microfarad 20v capacitor
Abstract: minitan capacitor, 22 microfarad 50v radial capacitor 10MF 35v microfarad surface mount capacitor 47 100 microfarad 20v tantalum capacitor 476 Tantalum Capacitor 476 capacitor capacitor 10mf 16v AVX taa
Text: Tantalum Leaded Capacitors AVX Tantalum Ask The World Of Us As one of the world’s broadest line leaded tantalum suppliers, and the major radial tantalum manufacturer, it is our mission to provide First In Class Technology, Quality and Service, by establishing
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CWR09
Mil-C-55365
CWR11
Mil-C-49137
S-TLG-20M1296-C
100 microfarad 20v capacitor
minitan
capacitor, 22 microfarad 50v
radial capacitor 10MF 35v
microfarad surface mount capacitor 47
100 microfarad 20v tantalum capacitor
476 Tantalum Capacitor
476 capacitor
capacitor 10mf 16v
AVX taa
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Untitled
Abstract: No abstract text available
Text: XICOR INC S E E J> T T 4 1 7 4 3 0 0 0 3 0 4 b Ö6T M X I C Advance Information XM20C64S 64K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES High Speed: tAA = 55 ns NO! Batteries!! AUTOSTORE™ NOVRAM — Automatically Stores RAM data to E2PROM upon Power-fail Detection
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XM20C64S
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424260-60
Abstract: TAA 691 uPD42S4260-60 UPD424260-60 P40L PD424260
Text: DATA SHEET I V I F f " / M O S I N T E G R A T E D C IR C U IT />PD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /jPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynam ic RAMs. The fast pago mode
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uPD42S4260-60
uPD424260-60
16-BIT,
/jPD42S4260-60,
/jPD42S4260-60
44-pin
40-pin
//PD42S4260-60,
VP15-207-2
424260-60
TAA 691
P40L
PD424260
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿ / P D 4 2 S 4 2 1 A , 4 2 4 2 1 A 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /JPD42S4210A, 424210A are 262 144 words by 16 bits dynamic CMOS RAMs with optional hyper page
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16-BIT,
/JPD42S4210A,
24210A
/PD42S4210A,
44-pin
40-pin
pag02
1PD42S4210A,
24210A.
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nec 4216400
Abstract: 7400g PD4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¡uPD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The JJPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
JJPD42S16400,
42S17400,
PD42S16400,
42S17400
26-pin
nec 4216400
7400g
PD4216400
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D4264400
Abstract: D42644
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability
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uPD4264400
uPD4265400
32-pin
iPD4264400-A50
265400-A
MPD4264400.
MPD4264400G5-7JD,
4265400G5-7JD:
D4264400
D42644
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D KM418V256A/AL/ALL • 7=^4142 DDISÌ'IT Q15 ■ SriGK CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418V256A/AL/ALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access
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KM418V256A/AL/ALL
KM418V256A/AL/ALL
KM418V256A/AL/ALL-7
130ns
KM418V256A/AL/ALL-8
150ns
40-LEAD
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASLJ
HY5116400AT
HY5116400ASLT
HY5116400AR
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TAA 691
Abstract: No abstract text available
Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASU
HY5116400Ã
HY5116400ASLT
TAA 691
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Untitled
Abstract: No abstract text available
Text: HYMA6V16733E14HGTG 16mx72, 3.3V, 8K Ref, EDO Description The HYMA6V16733E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin
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HYMA6V16733E14HGTG
16mx72,
HYMA6V16733E14HGTG
16Mx72
16Mx4bit
32pin
16bit
48pin
168pin
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Untitled
Abstract: No abstract text available
Text: KM44C4004B S CMOS D R AM ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004B
KM44C4004BS
D034S11
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KM41C16000
Abstract: TAA 691
Text: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM 41C 16000-6 • • • • • • • • • • tR A C tC A C tR C 60n6 15ns 1 10ns KM 41C 16000-7 70ns 20ns 130ns KM 41C 160 0 0-8
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KM41C16000
130ns
150ns
24-LEAD
KM41C16000
TAA 691
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TAA 691
Abstract: No abstract text available
Text: CMOS DRAM KM44C4102A/AL/ALL/ASL 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 4 C 4 1 0 2 A /A L /A L L /A S L is a h ig h • Performance range: s p e e d C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m
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KM44C4102A/AL/ALL/ASL
KM44C4102A/AL/ALL/ASL-5
KM44C4102A/AL/ALL/ASL-6
KM44C4102A/AL/ALL/ASL-7
KM44C4102A/ALVALUASL-8
110ns
130ns
150ns
24-LEAD
300MIL)
TAA 691
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Untitled
Abstract: No abstract text available
Text: KM418V256A/AL/ALL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM418V256A/AL/ALL-7 70ns 20ns 130ns KM418V256A/AL/ALL-8 80ns 20ns 150ns • • • • • • • • •
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KM418V256A/AL/ALL
KM418V256A/AL/ALL
40-LEAD
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p181 4 pin
Abstract: 511000 dram S511000 TC 511000
Text: MOSEL_MS511000 may isso 1,048,576 x 1 Fast Page Mode CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Available in 70/80/100/120 ns The M O SEL M S511000 is a CM OS dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M S511000 has been designed for m ainfram e, buffer memory,
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S511000
PID0061
MS511000
MS511000-70PC
MS511000-70SC
MS511000-70ZC
MS511000-80PC
MS511000-80SC
MS511000-80ZC
p181 4 pin
511000 dram
TC 511000
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TFK 082
Abstract: uPD424210A-60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿/P D 4 2 S 4 2 1 0 A , 4 2 4 2 1 0 A 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription T h e /JP D 4 2S 4 2 1 0A , 4 2 4 2 1 0 A a re 262 144 w o rd s by 16 bits d y n a m ic C M O S R A M s w ith o p tio n a l h y p e r p a g e
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16-BIT,
421OA,
24210A
D42S4210A
24210A
44-pin
PD42S4210A
424210ALE-XX
40-pin
TFK 082
uPD424210A-60
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Untitled
Abstract: No abstract text available
Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1004DT
1b4142
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Untitled
Abstract: No abstract text available
Text: GM71C16400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 71C 16400A is the new generation dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4 Bit. G M 71C 16400A has realized higher density, higher perform ance and various functions by
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GM71C16400A
6400A
71C16400A
DGQ37
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uPD424400
Abstract: UPD424400-60 upd424400-70 PD424400 UPD424400LA-60
Text: N EC MOS INTEGRATED CIRCUIT /¿PD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /jPD424400 is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption. These are packed in 26-pin plastic TSOP II , 26-pin plastic SOJ and 20-pin plastic ZIP.
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uPD424400
/jPD424400
26-pin
20-pin
uPD424400-60
uPD424400-70
iiPD424400-80
//PD424400-10
PD424400V
PD424400
UPD424400LA-60
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Halbleiterbauelemente DDR
Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder
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HYC532100
Abstract: jeida dram 88 pin
Text: “H Y U N D A I HYC532100 Series 1Mx32 DRAM CARD DESCRIPTION The HYC532100 is the DRAM memory card consisting of eight HY514400ALTbuilt in the metal plate housing. The Hyundai DRAM card is optimized for the applications such as buffering, main and add-in memory in the portable
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HYC532100
1Mx32
HY514400ALTbuilt
x32/16
1MC01-02-FEB95
HYC5321
-80PIN
jeida dram 88 pin
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MSM51V17100
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V17100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.
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MSM51VI7100_
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
b724E4G
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Untitled
Abstract: No abstract text available
Text: HM5117800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-632B Z Rev. 2.0 Dec. 5,1996 Description The Hitachi HM5117800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800 offers Fast Page Mode
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HM5117800
152-word
ADE-203-632B
28-pin
ns/60
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