Untitled
Abstract: No abstract text available
Text: CY7C1061AV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ 990 mW (max)
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CY7C1061AV33
16-Mbit
CY7C1061AV33
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R5C833
Abstract: pinout dell battery BCM5880 schematic lcd inverter dell SLG8LP554VTR SLG8LP554 schematic diagram lcd monitor dell camera pinout JAL10 broadcom BCM5880
Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL10 PCB NO : LA4151P DAA00000Q1L BOM P/N : 1 M09 Lola UMA uFCBGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-07-4 REV : 1.0 @ : Nopop Component 1@ : Use TCM only 2@ : Use TAA only 3@ : Use BROADCOM TPM only
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JAL10
LA4151P
DAA00000Q1L)
DAA00000Q1L
LA-4151P
PR170
LA-4151P
R5C833
pinout dell battery
BCM5880
schematic lcd inverter dell
SLG8LP554VTR
SLG8LP554
schematic diagram lcd monitor dell
camera pinout
broadcom BCM5880
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IBM0164165B4M
Abstract: IBM0164165P4M TSOP-54
Text: IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO. IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0164165B4M
IBM0164165P4M
IBM0164165B
IBM0164165P
104ns
128ms
TSOP-54
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V53C365805A
Abstract: WL12
Text: MOSEL VITELIC V53C365805A 3.3 VOLT 8M X 8 EDO PAGE MODE CMOS DYNAMIC RAM V53C365805A 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
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V53C365805A
cycles/64
32-pin
V53C365805A
WL12
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Untitled
Abstract: No abstract text available
Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
IBM11D4480B
IBM11E4480B
72-Pin
130ns
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Untitled
Abstract: No abstract text available
Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
IBM11D4480B
IBM11E4480B
72-Pin
130ns
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8m x 36
Abstract: No abstract text available
Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480BG IBM11E8480BG 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:
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IBM11D8480BA8M
EOS11/11,
IBM11E8480BA8M
IBM11D8480BG
IBM11E8480BG
72-Pin
8m x 36
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Untitled
Abstract: No abstract text available
Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480BG IBM11E4480BG 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
IBM11D4480BG
IBM11E4480BG
72-Pin
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8m x 36
Abstract: No abstract text available
Text: IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm
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IBM11D8480BA8M
EOS11/11,
IBM11E8480BA8M
IBM11D8480B
IBM11E8480B
72-Pin
130ns
8m x 36
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SA14-4328-01
Abstract: No abstract text available
Text: IBM11D2480BA2M x 36 EOS10/10, 5.0V, Sn/Pb. IBM11E2480BA2M x 36 EOS10/10, 5.0V, Au. IBM11D2480B IBM11E2480B 2M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm
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IBM11D2480BA2M
EOS10/10,
IBM11E2480BA2M
IBM11D2480B
IBM11E2480B
72-Pin
130ns
SA14-4328-01
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Untitled
Abstract: No abstract text available
Text: IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: • Single-error-correct SEC high-speed ECC algorithm
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IBM11D8480BA8M
EOS11/11,
IBM11E8480BA8M
IBM11D8480B
IBM11E8480B
72-Pin
130ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PDM41034 1 Megabit Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High speed access times Com’l: 10, 12, 15, 17 and 20ns Ind’l.: 12, 15, 17 and 20ns n Low power operation typical - PDM41034SA Active: 400 mW Standby: 150 mW
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PDM41034
PDM41034
PDM41034SA
PDM41034LA.
32-pin
300-mil
400-mil
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Untitled
Abstract: No abstract text available
Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490BG IBM11D4490BG IBM11E8490BG IBM11D8490BG 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
72-Pin
130ns
IBM11E4490BG
IBM11D4490BG
IBM11E8490BG
IBM11D8490BG
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Untitled
Abstract: No abstract text available
Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490B IBM11D4490B IBM11E8490B IBM11D8490B 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
IBM11E4490B
IBM11D4490B
IBM11E8490B
IBM11D8490B
72-Pin
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AT75C310
Abstract: AT75C310-Q160 PQFP160
Text: Features ARM7TDMI ARM Thumb® Processor Core Two 16-bit Fixed-point OakDSPCore® Cores 256 x 32-bit Boot ROM 88K Bytes of Integrated Fast RAM for Each DSP Flexible External Bus Interface with Programmable Chip Selects Dual Codec Interface Multi-level Priority, Individually Maskable, Vectored Interrupt Controller
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16-bit
32-bit
07/00/0M
AT75C310
AT75C310-Q160
PQFP160
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Untitled
Abstract: No abstract text available
Text: ta0 E J> • aS3Sb05 D D M ^ ci37 ST1 « S I E G SIEMENS SIEMENS AKTIEN GESELLSCH AF T - 'f H Æ - i o Single Operational Amplifiers TAA 762 TAA 765 Features Bipolar 1C • W ide common-mode range • Large supply voltage range • Large control range • W ide temperature range TAA 762
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aS3Sb05
Q67000-A2271
Q67000-A2273
Q67000-A524
Q67000-A599-G403
1235b05
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TCA 430
Abstract: 431lg
Text: LG Semicon 1M/4M Base FPM Timing Timing Waveforms -1 tRC ÌRAS ÎRP \ RAS .2 ÌRCD tRSH tCAS tT CAS 7 •<L tRAJL tRAD tASR ADDRESS \ tcRP tcSH U se. tRAH ROW t e AH. COLUMN , tRRH , t»CH tRCS WE tCAC tAA tRAC tOFF Doirr /< -^ D our y ■'v_ ?
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J031
Abstract: No abstract text available
Text: i 6 5 9 I £ 0 PS ’O N %-ñ W ï ïB FJfcl kf t] RE V. 0NIMVHQ DATE DON M. F*J S & NO. m DESCRIPTION 2 9. F e b . 1999 43609 REV I SED 3 16.J a n . 2004 054028 DELETE COLOR DIMENSION * fi É CHK. DR. H.SAKURADA K.HASEBE H.SAKURADA K.HASEBE & r W> A PPD.
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MX5-A-14P-L-B
SJ031665
MX5-A-14P-L-B
J031
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Untitled
Abstract: No abstract text available
Text: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.
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GMM7401000BS/SG-60/70/80
7401000BS/SG
GMM7401000BS/SG
GMM7401OOOBS
7401000BSG
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Untitled
Abstract: No abstract text available
Text: II II High Performance 16Kx4 CMOS SRAM AS7C188 AS7C186 16Kx4 CMOS SRAM Common I/O FEATURES • O rganization: 16,384 w ords x 4 bits • High Speed: • Com pletely static memory. No clocks or timing strobe required. • Equal access and cycle times •
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16Kx4
AS7C188
AS7C186
16Kx4
22/24-pin
20/25/30/35/45ns
440mW
110mW
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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Untitled
Abstract: No abstract text available
Text: ÂS7CÏ64 AS7 C IÇ 4L CMOS SHAM 1F E A T U R E S • Organization: 8,192 words x 8 bits • Completely static memory. No clocks or timing strobe required. • Equal access and cycle times • Automatic power-down when de-selected • For high density, a slim 300 mil. 28-pin package
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28-pin
550mW
110mW
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I1244
Abstract: D42S18165 LH 446
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page
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16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L
iiPD42S18165L,
4218165L
50-pin
42-pin
1PD42S18165L-A60,
4218165L-A60
I1244
D42S18165
LH 446
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RAS 05
Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
Text: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )
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HB56D436
304-word
36-bit
117400A
HB56D436BR-6A
HB56D436BR-7
RAS 05
HB56D436SBR-7AC
HB56D436BR-7A
HBS6D436SBR-8A
hb56d436br-6ac
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