atmel 424
Abstract: AT65609EHW AT65609EHW-CI40SV AT65609E MA9264 ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791C
atmel 424
AT65609EHW-CI40SV
AT65609E
ATMel 046
MIL-PRF38535
AT65609EHW-CI40MQ
AT65609EHW-CI40SR
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Untitled
Abstract: No abstract text available
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791Câ
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Untitled
Abstract: No abstract text available
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW Max – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791Dâ
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IN148
Abstract: TQFP48 TSA1041IF TSA1041IFT INCM
Text: TSA1041 OPTIMWATTTM 4-channel 10-Bit 30-50MSPS A/D Converter TARGET SPECIFICATION • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ OPTIMWATTTM features - Power down device - Adjustable consumption versus speed. - Ultra low power consumption: 440mW@50Msps, 380mW @40Msps.
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TSA1041
10-Bit
30-50MSPS
440mW
50Msps,
380mW
40Msps.
10MHz
IN148
TQFP48
TSA1041IF
TSA1041IFT
INCM
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D217
Abstract: D323 TQFP48 TSA1041IF TSA1041IFT in148
Text: TSA1041 OPTIMWATTTM 4-CHANNEL 10-BIT 50MSPS A/D CONVERTER PRELIMINARY DATA FEATURES • OPTIMWATT ORDER CODE TM 1 features - Power down device - Adjustable consumption versus speed. - Ultra low power consumption: 440mW@50Msps, 380mW @40Msps. TQFP48 Tray SA1041I
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TSA1041
10-BIT
50MSPS
440mW
50Msps,
380mW
40Msps.
TSA1041IF
TQFP48
SA1041I
D217
D323
TQFP48
TSA1041IF
TSA1041IFT
in148
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RLC Filter Design
Abstract: ADS5121 MPA4609 MPA4609IPFBR MPA4609IPFBT OPA2846 TQFP-48 piezoelectric film sensor "Piezoelectric Sensor"
Text: MPA4609 MP A46 09 www.ti.com SBOS252E – AUGUST 2002 – REVISED DECEMBER 2008 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252E
MPA4609
RLC Filter Design
ADS5121
MPA4609IPFBR
MPA4609IPFBT
OPA2846
TQFP-48
piezoelectric film sensor
"Piezoelectric Sensor"
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AAT4290
Abstract: AAT4291 SC70JW-8
Text: AAT4290/4291 I/O Expander Load Switches with Serial Control General Description Features The AAT4290 and AAT4291 SmartSwitch products are members of AnalogicTech’s Application Specific Power MOSFET™ ASPM™ product family. The AAT4290 and AAT4291 are five and
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AAT4290/4291
AAT4290
AAT4291
500ns
SC70JW-8
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Untitled
Abstract: No abstract text available
Text: PCM1760P/U DF1760P/U Multi-Bit Enhanced Noise Shaping 20-Bit ANALOG-TO-DIGITAL CONVERSION SYSTEM FEATURES DESCRIPTION ● DUAL 20-BIT MONOLITHIC MODULATOR PCM1760 AND MONOLITHIC DECIMATING DIGITAL FILTER (DF1760) ● HIGH PERFORMANCE: THD+N: –92dB typ, –90dB max
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PCM1760P/U
DF1760P/U
20-Bit
PCM1760)
DF1760)
108dB
110dB
256fs
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Untitled
Abstract: No abstract text available
Text: MPA4609 MP A46 09 www.ti.com SBOS252E – AUGUST 2002 – REVISED DECEMBER 2008 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252E
90MHz
90V/V
65nV/Hz
TQFP-48
MPA4609
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piezoelectric amplifier
Abstract: N 1114c RLC Filter Design
Text: MPA4609 MP A46 09 SBOS252D – AUGUST 2002 – REVISED MARCH 2005 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252D
90MHz
90V/V
65nV/Hz
TQFP-48
MPA4609
piezoelectric amplifier
N 1114c
RLC Filter Design
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GS1572-IBE3
Abstract: sd 4841 p GS1572 sd 4842 cea-861 352M CEA861 HD-SDI serializer 16 bit parallel GO1555 gs1572ibe3
Text: GS1572 Multi-Rate Serializer with Cable Driver and ClockCleanerTM Key Features Description • HD-SDI, SD-SDI, DVB-ASI transmitter • Integrated SMPTE 292M and 259M-C compliant cable driver • Integrated ClockCleaner • User selectable video processing features, including:
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GS1572
259M-C
292M/259M-C
20-bit
10-bit
GS1572-IBE3
sd 4841 p
sd 4842
cea-861
352M
CEA861
HD-SDI serializer 16 bit parallel
GO1555
gs1572ibe3
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car mp3 remote
Abstract: AT83SND2MP3 0011B 7524B AT83SND2CDVX AT83SND2CMP3 CRC16 FAT32 emmc pin mp3 player schematic diagram
Text: Features • MPEG I/II-Layer 3 Hardwired Decoder • • • • • • • • • • – Stand-alone MP3 Decoder – 48, 44.1, 32, 24, 22.05, 16 kHz Sampling Frequency – Separated Digital Volume Control on Left and Right Channels Software Control using 31 Steps
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20-bit
440mW
7524B
car mp3 remote
AT83SND2MP3
0011B
AT83SND2CDVX
AT83SND2CMP3
CRC16
FAT32
emmc pin
mp3 player schematic diagram
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TC5116400
Abstract: tc5116400csj 300D1 toshiba RAS-25
Text: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M
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TC5116400CSJ/CST
300mil)
400CSJ/C
TC5116400
CSJ/CST-40
CSJ/CST-50
tc5116400csj
300D1
toshiba RAS-25
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TC514258
Abstract: 4256AP 58ab AZ-70
Text: TOSHIBA MOS MEMORY PRODUCTS TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as
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TC514258AP/AJ/AZ-70,
TC514258AP/AJ/AZ-80
TC514258AP/AJ/AZ-10
TC514258AP/AJ/AZ
TC514258AP/AJ/AZ-70.
TC514258AP/A4/AZ-80
TC514258
4256AP
58ab
AZ-70
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NZ70
Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Text: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by
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TC511001AP/AJ/AZ-70,
TG511001
AP/AJ/flZ-80
TC511001AP/AJ/AZ-10
TC511001AP/AJ/AZ
TG511001AP/AJ/AZ-80
TCS11001AP/AJ/AZ-10
NZ70
TC511001
TC511001AZ
adata a55 diagram
4ao5
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC54 VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 xA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23A-3,
OT-89,
TC54VC,
forTC54VN)
OT-23A-3
OT-89-3
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LS157
Abstract: RA1C MAS 20 RCA 8086 logic diagram fujitsu ten interfacing of memory devices with 8086 DIP-42P-M02 LS08 DIP-42P-M01 interfacing of RAM with 8086
Text: FUJITSU DYNAMIC RAM CONTROLLER LSI MB 1422A June 1 9 8 6 E d itio n 1 .0 D YN A M IC RAM CONTROLLER The Fujitsu MB 1 4 2 2 A is a h ig h performance DRAM controller LSI. The MB 1422A controls address m ultiplexing, refresh tim in g and their arbitra tio n , and realizes one chip DRAM peripheral controller.
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42-pin
44-pin
42-LEAD
DIP-42P-M01)
DIP42P
042007S-1C
44-LEAD
LCC-44P-M01)
C44051S
LS157
RA1C
MAS 20 RCA
8086 logic diagram
fujitsu ten
interfacing of memory devices with 8086
DIP-42P-M02
LS08
DIP-42P-M01
interfacing of RAM with 8086
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
1AD02-10-APR93
HY5116400JC
HY5116400LJC
HY5116400TC
HY5116400LTC
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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HY514264
Abstract: No abstract text available
Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514264B
256Kx16,
16-bit
40-pin
400mil)
16-bits
256Kx16
HY514264
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51161
HY5116100Ato
9-10-MAY94
HY5116100A
HY5116100AJ
HY5116100ASU
HY5116100AT
HY51161OOASLT
HY5116100AR
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T02I
Abstract: 26-PIN ZIP20-P-400 514100B
Text: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.
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MSM514100B
MSM514100BL
304-Word
MSM514100B/BL
cycles/16ms,
cycles/128ms
2424G
T02I
26-PIN
ZIP20-P-400
514100B
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