D 835
Abstract: 8275mhz
Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 827.5 MHz MODEL NO.: TA981A REV. NO.:1
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TA981A
D 835
8275mhz
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G8060
Abstract: ruru8060 RUR 0820 TB-01
Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number
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G8060
RURU8060
RURU8060
G8060
RUR 0820
TB-01
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ruru8060
Abstract: RURU8040 RURU8050
Text: RURU8040, RURU8050, RURU8060 S E M I C O N D U C T O R 80A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<75ns JEDEC STYLE SINGLE LEAD TO-218 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURU8040,
RURU8050,
RURU8060
O-218
RURU8050
TA9886)
ruru8060
RURU8040
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RFP40N10
Abstract: No abstract text available
Text: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs Features Title FG4 10, P40 0, 1S4 10S These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFG40N10,
RFP40N10,
RF1S40N10SM
TA9846
RFP40N10
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InGaAs photodiode 1310 1550
Abstract: No abstract text available
Text: PD LD Inc. PTIN15- Series PTIN62- Series InGaAs PIN TIA Receivers PD-LD Inc. offers low noise, high responsivity InGaAs photo detectors paired with a transimpedance amplifiers TIA in convenient fiber coupled packages. These assemblies incorporate a 75 micron diameter active area
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PTIN15-
PTIN62-
InGaAs photodiode 1310 1550
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MBS 14
Abstract: MBS 1250
Text: PD Inc LD PTIN15- Series PTIN62- Series InGaAs PIN TIA Receivers PD-LD Inc. offers low noise, high responsivity InGaAs photo detectors paired with a transimpedance amplifiers TIA in convenient fiber coupled packages. These assemblies incorporate a 75 micron diameter active area
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PTIN15-
PTIN62-
MBS 14
MBS 1250
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D370-02A
Abstract: D370-10A D370-20A TA-TSY-000983 TR-NWT-000468 D370-10F Laser Module Telcordia Technologies
Text: Data Sheet October 2000 D370-Type Digital Uncooled Laser Module Applications • Long-reach SONET OC-3/OC-12 systems ■ SDH STM-1/STM-4 systems ■ Telecommunications ■ Secure digital data systems Benefits The low-profile D370-Type Laser Module is ideally suited for
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D370-Type
OC-3/OC-12
14-pin
DS99-033LWP-1
DS99-033LWP)
D370-02A
D370-10A
D370-20A
TA-TSY-000983
TR-NWT-000468
D370-10F
Laser Module
Telcordia Technologies
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Transistor TT 2246
Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23
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3/SOT-23
6/SOT-23
10/uMAX
3/SC-70
Transistor TT 2246
TT 2206 datasheet
apm 4906
TT 2206
transistor tt 2206
tt 2246
bt 7377
SOT-23 AAAA
bc 5478
AAXZ
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ta143
Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.
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gLTAN47
AN47-129
AN47-130
AN47-131
AN47-132
an47fa
ta143
Ferronics 21-110J
AN47-127
AN47
AN-4745
AN47-48
AN47-93
Tektronix P6056
TELEDYNE PHILBRICK logarithmic
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RFP22N10
Abstract: No abstract text available
Text: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFP22N10,
RF1S22N10,
RF1S22N10SM
TA9845.
1-800-4-HARRIS
RFP22N10
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AN7254
Abstract: AN7260 RFW2N06RLE TB334
Text: RFW2N06RLE Data Sheet July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET File Number 2838.3 Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes
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RFW2N06RLE
RFW2N06RLE
AN7254
AN7260
TB334
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Untitled
Abstract: No abstract text available
Text: SPM3201A Antenna Switch MMIC TENTATIVE Features and Applications ・Control voltage ＋3/0V. ・Miniature package of mini mold. TSSOP-8 ・Low loss and high linearity Absolute Maximum Ratings／Ta=25℃ unit Control Voltage Storage Temperature Operating Temperature
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SPM3201A
30dBm)
900MHz
TA980617M
20dBm
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D371-22A
Abstract: D371-10A D371-20A D371-20B
Text: a ere " J AdLiI b OCR Evaluation J 1 V 1 1 1 J Data Sheet January 1999 D371-Type Digital Uncooled DFB Laser Module Applications . Long-reach SONET OC-3/OC-12 systems . Telecommunications . Secure digital data systems Benefits . Easily board mounted . Requires no lead bending
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D371-Type
OC-3/OC-12
DS99-022LWP
DS98-283LWP)
D371-22A
D371-10A
D371-20A
D371-20B
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BVces
Abstract: diagram induction AN7254 AN7260 G34N100E2 HGTG34N100E2
Text: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss
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HGTG34N100E2
O-247
710ns
HGTG34N100E2
150oC.
BVces
diagram induction
AN7254
AN7260
G34N100E2
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Untitled
Abstract: No abstract text available
Text: « RURU8070, RURU8080, RURU8090, RURU80100 80A, 700V - 1000V Ultrafast Diodes A p r ii 1 9 9 5 Features Package • U Itrafast with Soft JEDEC STYLE SINGLE LEAD TO-218 • Operating
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RURU8070,
RURU8080,
RURU8090,
RURU80100
125ns
O-218
RURU8090
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Untitled
Abstract: No abstract text available
Text: Advance Data Sheet April 1998 microelectronics group 3 r Lucent Technologies Bell Labs Innovations A371-Type Analog Uncooled Isolated DFB Flat-PAC Laser Module • No thermoelectric cooler required ■ Single- and double-isolated versions available ■ High output power: typically 2.0 mW peak power
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A371-Type
TA-983
DS98-112LWP
DS97-316LWP)
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RURG8040
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D S E C T O R ih a rris W bflE D • 43 D2 27 1 D D S Q BT S 33S M H A S HUHG8040, RURG8050 RURG8060 SEMICONDUCTOR 80A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery. <75ns
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HUHG8040,
RURG8050
RURG8060
RURG8040,
RURG8050
TA9886)
RURG8050,
RURG8040
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TA9886
Abstract: RURU8050
Text: i l i h a r r is \M J SEMI CONDUCTOR RURU8040, RURU8050 RURU8060 80A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery. <75ns • Operating Temperature. +175°C
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RURU8040,
RURU8050
RURU8060
TA9886)
RURU805Q,
RURU8060
TA9886
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Indium 5.7 LT
Abstract: D571 LUCENT 1550 lucent 1550 nm
Text: m i c r o e l e c t r o n i c s gr o u p Advance Data Sheet January 1999 Lucent Technologies Bell Labs Innovations D571-Type Digital 1.5 jim Uncooled DFB FastLight Laser Mod ule • Hermetically sealed active components ■ Internal back-facet monitor ■ Qualification program: Bellcore TA-983
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D571-Type
TA-983
OC-3/OC-12
14-pin
571-Type
S99-056LW
Indium 5.7 LT
D571
LUCENT 1550
lucent 1550 nm
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Untitled
Abstract: No abstract text available
Text: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled FastLight Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available ■ Hermetically sealed active components
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OCR Scan
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D370-Type
TA-983
OC-3/OC-12
370-Type
99-033LW
DS98-388LW
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Untitled
Abstract: No abstract text available
Text: Data Sheet January 1999 gr oup Lucent Technologies Bell Labs Innovations D372-Type Digital Uncooled DFB FastLight Laser Module for 2.5 Gbits/s Applications Applications • SONET OC-48/STM-16 systems ■ Telecommunications ■ Secure digital data systems
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D372-Type
OC-48/STM-16
14-pin
372-Type
diod344
99-023LW
S98-350LW
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D370
Abstract: No abstract text available
Text: Advance Data Sheet February 1997 microelectronics group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber. 0.2 mW and 2.0 mW versions available
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OCR Scan
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D370-Type
TA-983
OC-3/OC-12
OC-48
STM-1/STM-4/STM-16
DS97-1
PS96-002LWP-4)
D370
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Untitled
Abstract: No abstract text available
Text: m i c r o e l e c t r o n i c s gr oup Advance Data Sheet February 1997 Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB Mini-DIL Laser Module a High output power: typical 2.0 mW peak power coupled into single-mode fiber • Hermetically sealed active components
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OCR Scan
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D371-Type
TA-983
OC-3/OC-12
14-pin
DS97-043LWP
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Untitled
Abstract: No abstract text available
Text: group Advance Data Sheet August 1998 Lucent Technologies Bell Labs Innovations D374-Type Digital Uncooled 2.5 Gbits/s FastLight Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available
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OCR Scan
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D374-Type
TA-983
OC-48
STM-16
374-Type
S98-123LW
PS97-013LW
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