Untitled
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
6132P
HUF76
132S3
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118E-2
Abstract: KP120 TC292
Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
6132P
HUF76
132S3
118E-2
KP120
TC292
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76132S
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S Data Sheet December 2002 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132S
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76132P
Abstract: TA7613 AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Text: HUF76132P3, HUF76132S3S Data Sheet December 2001 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132P
TA7613
AN9321
AN9322
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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76132P
Abstract: AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 76132S
Text: HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132P
AN9321
AN9322
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
76132S
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76132P
Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Text: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology
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HUF76132P3,
HUF76132S3S
HUF76
132P3,
132S3S
low30V,
51e-2
03e-2
05e-2
76132P
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
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76132s
Abstract: 76132P AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 TA7613 TA76132
Text: HUF76132P3, HUF76132S3S Data Sheet September 1999 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
76132s
76132P
AN9321
AN9322
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
TA7613
TA76132
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TC297
Abstract: LSE 0405 HUF76132S3
Text: ? *3 2 £ HUF76132P3, HUF76132S3, HUF76132S3S 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs July 1998 | Features • Logic Level Gate Drive Description w These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the
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OCR Scan
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HUF76132P3,
HUF76132S3,
HUF76132S3S
TB334,
O-263AB
O-263AB
TC297
LSE 0405
HUF76132S3
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KP120
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF76132P3,
HUF76132S3S
51e-2
03e-2
05e-2
81e-1
45e-1
HUF76132
50e-3
18e-2
KP120
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76132S
Abstract: 76132p
Text: HUF76132P3, HUF76132S3S interrii Data S h e e t 754, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
HUF76132S3S
AN7254
AN7260.
76132S
76132p
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