G3N60C3
Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGTP3N60C3D,
HGT1S3N60C3DS
HGT1S3N60C3DS
150oC.
TA49113.
TA49055.
G3N60C3
G3N60
G3N60C3D
HGT1S3N60C3DS9A
HGTP3N60C3D
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g3n60c3d
Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Text: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
150oC
O-262AA
g3n60c3d
HGT1S3N60C3D
HGT1S3N60C3DS
HGT1S3N60C3DS9A
HGTP3N60C3D
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G3N60C3D
Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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Original
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HGTP3N60C3D,
HGT1S3N60C3DS
HGT1S3N60C3DS
150oC.
TA49113.
TA49055.
G3N60C3D
HGT1S3N60C3DS9A
HGTP3N60C3D
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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g3n60c3d
Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49055 G3N60C3
Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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Original
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HGTP3N60C3D,
HGT1S3N60C3DS
HGT1S3N60C3DS
150oC.
TA49113.
TA49055.
130ns
g3n60c3d
HGT1S3N60C3DS9A
HGTP3N60C3D
TA49055
G3N60C3
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G3N60C3D
Abstract: G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability
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Original
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
150oC
O-262AA
G3N60C3D
G3N60C3
HGT1S3N60C3D
HGT1S3N60C3DS
HGT1S3N60C3DS9A
HGTP3N60C3D
TA49119
G3N60
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g3n60c3d
Abstract: HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability
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Original
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
150oC
O-262AA
g3n60c3d
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
HGT1S3N60C3DS9A
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Untitled
Abstract: No abstract text available
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C
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OCR Scan
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
O-262AA
1-800-4-HARRIS
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3N60C3D
Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
Text: HARRIS HGTP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C
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OCR Scan
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HGTP3N60C3D
HGT1S3N60C3D,
HGT1S3N60C3DS
130ns
O-22QAB
HGTP3N60C3D,
HGT1S3N60C3DS
-800-4-H
3N60C3D
g3n60c3d
3n60c3
3n60c
transistor TE 901 equivalent
Zener Diode LT 432
S3N60C3
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hg 3a 1004
Abstract: BT 139 F applications note
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability
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OCR Scan
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
-220AB
ay1996
130ns
HGT1S3N60C3DS
1-800-4-HARRIS
hg 3a 1004
BT 139 F applications note
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g3n60c3d
Abstract: SE101-1 HGT1S3N60C3DS9A HGTP3N60C3D HGT1S3N60C3DS G3N60C3
Text: in t e HGTP3N60C3D, HGT1S3N60C3DS r r ii J a n u a ry . m Data Sheet 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and H G T1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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OCR Scan
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HGTP3N60C3D,
HGT1S3N60C3DS
HGT1S3N60C3DS
TA49113.
TA49055.
g3n60c3d
SE101-1
HGT1S3N60C3DS9A
HGTP3N60C3D
G3N60C3
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