URG30100C
Abstract: RURG30100CC URG30100
Text: RURG30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer itch January 2000 File Number 2935.3 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft
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RURG30100CC
RURG30100CC
110ns)
110ns
URG30100C
URG30100
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URG30100C
Abstract: RURG30100CC
Text: RURG30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURG30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG30100CC
RURG30100CC
110ns)
110ns
175oC
URG30100C
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RURG30100
Abstract: TA09904
Text: RURG30100 Data Sheet January 2000 File Number 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG30100
RURG30100
110ns)
110ns
TA09904
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URH30100C
Abstract: RURH30100CC 1225AL diode 1000V 100a
Text: RURH30100CC Data Sheet Title UR 010 C bt A, 00V rafa Dual ode) utho eyrds A, 00V rafa Dual ode, errpoon, minctor, ache ergy ted, itch wer pes, wer January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft
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RURH30100CC
RURH30100CC
110ns)
110ns
URH30100C
1225AL
diode 1000V 100a
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igbt 1000v 30a
Abstract: RURG30100
Text: RURG30100 Data Sheet Title URG 100 bt A, 00V rafa ode) utho eyrds A, 00V rafa January 2000 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG30100
RURG30100
110ns)
110ns
igbt 1000v 30a
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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tb 120
Abstract: RURH30100CC URH30100C *h30100
Text: RURH30100CC Data Sheet January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURH30100CC
RURH30100CC
110ns)
110ns
tb 120
URH30100C
*h30100
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RURH30100CC
Abstract: URH30100C
Text: RURH30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURH30100CC
RURH30100CC
110ns)
110ns
175oC
URH30100C
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RUR30100
Abstract: rur30100 Diode tb 120 RURP30100
Text: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,
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RURP30100
RURP30100
110ns)
110ns
RUR30100
rur30100 Diode
tb 120
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RUR30100
Abstract: rur30100 Diode RURP30100
Text: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP30100
RURP30100
110ns)
110ns
175oC
RUR30100
rur30100 Diode
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rur30100 Diode
Abstract: RUR30100 RURP30100
Text: RURP30100 Data Sheet January 2000 File Number 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,
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RURP30100
RURP30100
110ns)
110ns
rur30100 Diode
RUR30100
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RURG30100
Abstract: No abstract text available
Text: RURG30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG30100
RURG30100
110ns)
110ns
175oC
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RUR30100
Abstract: RURP30100 fast recovery diode 1000v 30A
Text: RURP30100 interdi Data Sheet Ja nu a ry 2000 File N u m b e r 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery • U Itrafast with Soft • Operating Temperature. 175°C
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OCR Scan
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RURP30100
RURP30100
110ns)
TA09904.
O-22QAC
RUR30100
RUR30100
fast recovery diode 1000v 30A
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