ifr120
Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
ifr120
IFU120
IFr-120
IRFR120
IRFR120T
IRFU120
TB334
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Untitled
Abstract: No abstract text available
Text: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF120
IRFF120
O-205AF
TB334,
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Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
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Untitled
Abstract: No abstract text available
Text: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF120,
IRFF121,
IRFF122,
IRFF123
TA09594.
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RFK25N20
Abstract: AN7254 AN7260 RFK25N18
Text: RFK25N18, RFK25N20 Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFK25N18,
RFK25N20
TA09594.
RFK25N18
O-204AE
RFK25N20
AN7254
AN7260
RFK25N18
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transistor IRF520
Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF520
TA09594.
transistor IRF520
irf520 mosfet
37ag
transistor equivalent irf520
IRF520
TB334
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IRF120
Abstract: irf122 irf123
Text: IRF120, IRF121, IRF122, IRF123 S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF120,
IRF121,
IRF122,
IRF123
TA09594.
IRF123
IRF120
irf122
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IRFF120
Abstract: TB334
Text: IRFF120 Data Sheet January 2002 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF120
IRFF120
TB334
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IRFR120
Abstract: IRFU120 TB334
Text: [ /Title IRFR 120, IRFU1 20 /Subject (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO251AA , TO252AA IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel
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O251AA
O252AA
IRFR120,
IRFU120
IRFR120
IRFU120
TB334
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irf52 0
Abstract: No abstract text available
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()
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IRF520
IRF52
O220AB
IRF520
irf52 0
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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IRFF120
Abstract: TB334
Text: IRFF120 Data Sheet March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET 1563.3 Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF120
IRFF120
TB334
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IRFU120
Abstract: IRFR120 motor IRFR120 TB334
Text: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR120,
IRFU120
TA09594.
IRFU120
IRFR120 motor
IRFR120
TB334
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IRF120
Abstract: irf121 IRF122 IRF123 TB334
Text: IRF120, IRF121, IRF122, IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF120,
IRF121,
IRF122,
IRF123
IRF120
irf121
IRF122
IRF123
TB334
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IRF5201
Abstract: IRF520 IRF521 IRF522 IRF523 TB334 irf520 mosfet MOSFET IRF520 IRF5213 IRF-520
Text: IRF520, IRF521, IRF522, IRF523 S E M I C O N D U C T O R 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF520,
IRF521,
IRF522,
IRF523
IRF5201
IRF520
IRF521
IRF522
IRF523
TB334
irf520 mosfet
MOSFET IRF520
IRF5213
IRF-520
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irf121
Abstract: IRF120 IRF123
Text: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate
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IRF120,
IRF121,
IRF122,
IRF123
RF123
irf121
IRF120
IRF123
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Untitled
Abstract: No abstract text available
Text: RFK25N18, RFK25N20 Semiconductor Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs File Number 1500.3 Features • 25A, 180V and 200V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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PDF
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RFK25N18,
RFK25N20
TA09594.
RFK25N18
-204AE
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFF120,
IRFF121,
IRFF122,
IRFF123
TA09594.
RFF122,
IRFF123
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Untitled
Abstract: No abstract text available
Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFM12N08,
RFM12N10,
RFP12N08,
RFP12N10
TB334
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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typesRFU121
IRFR120,
RFR121,
IRFU120,
RFU121
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IRF521
Abstract: IRF520 irf523 F521 irf522
Text: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF520,
IRF521,
IRF522,
IRF523
TA09594
RF521,
IRF521
IRF520
irf523
F521
irf522
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Untitled
Abstract: No abstract text available
Text: IRF120, IRF121, IRF122, IRF123 HARRIS S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Description Features 8.0A and 9.2A, 80V and 100V Majority Carrier Device These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF120,
IRF121,
IRF122,
IRF123
RF122,
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Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRF520
O-220AB
TB334
TA09594.
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Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120 Semiconductor Ju ly 1999 D ata S h eet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRFR120,
IRFU120
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