f12n10l
Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
Text: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
f12n10l
f12n10
AN7254
AN7260
RFP12N10L
TB334
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F12N10L
Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
Text: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
F12N10L
f12n10
TA09526
Logic Level N-Channel Power MOSFET
AN7254
AN7260
RFP12N10L
TB334
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F12N10L
Abstract: f12n10
Text: RFP12N10L Data Sheet Title FP1 10L bt A, 0V, 00 m, gic vel, Cha el wer OST utho July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use
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RFP12N10L
TA09526.
F12N10L
f12n10
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F12N10L
Abstract: f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig
Text: RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
F12N10L
f12n10
RFP12N10L
RFP12N10L equivalent
AN7254
AN7260
TB334
833ig
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Untitled
Abstract: No abstract text available
Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
RFP12N10L
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F12n10
Abstract: No abstract text available
Text: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
F12n10
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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F12N10L
Abstract: f12n10
Text: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits
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RFP12N10L
O-22QAB
200i2
AN7254
AN7260
RFP12N101Test
F12N10L
f12n10
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f12n10L
Abstract: f12n10
Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use
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OCR Scan
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RFP12N10L
TA09526.
RFP12N10L
0-56mA
AN7254
AN7260
75BVds
f12n10L
f12n10
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