WMS256K16L-XXX
Abstract: WMS256K16-XXX x 16 SRAM 256K x 16 SRAM
Text: WMS256K16-XXX White Electronic Designs 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • 2V Minimum Data Retention for battery back up operation WMS256K16L-XXX Low Power Version Only ■ Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available
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WMS256K16-XXX
256Kx16
WMS256K16L-XXX
MIL-STD-883
256Kx16
I/O9-16
01HNX
02HNX
03HNX
WMS256K16-XXX
x 16 SRAM
256K x 16 SRAM
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PDF
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TBA 129-5
Abstract: WMS256K16L-XXX WMS256K16-XXX
Text: White Electronic Designs WMS256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ PIN CONFIGURATION FOR WMS256K16-XXX 44 CSOJ Packaging 44 FlatpacK • 44 pin Ceramic SOJ Package 102
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Original
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WMS256K16-XXX
256Kx16
MIL-STD-883
256Kx16
I/O9-16
WMS256K16L-XXX
01HNX
02HNX
03HNX
TBA 129-5
WMS256K16-XXX
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PDF
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TBA 129-5
Abstract: WMS256K16L-XXX WMS256K16-XXX
Text: WMS256K16-XXX White Electronic Designs 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES PIN CONFIGURATION FOR WMS256K16-XXX • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging 44 FlatpacK • 44 pin Ceramic SOJ Package 102
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Original
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WMS256K16-XXX
256Kx16
MIL-STD-883
256Kx16
I/O9-16
WMS256K16L-XXX
01HNX
02HNX
03HNX
TBA 129-5
WMS256K16-XXX
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PDF
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AH 45
Abstract: WSF128K16-XXX
Text: WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES n Access Times of 35ns SRAM and 70ns (FLASH) n Access Times of 70ns (SRAM) and 120ns (FLASH) n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation n Weight • WSF128K16-XHX - 13 grams typical
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Original
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WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX
66-pin,
120ns
AH 45
WSF128K16-XXX
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PDF
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Untitled
Abstract: No abstract text available
Text: WMS256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 PIN CONFIGURATION FOR WMS256K16-XXX FEATURES Access Times 17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available 44 CSOJ Packaging • 44 pin Ceramic SOJ Package 102 44 FlatpacK
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Original
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WMS256K16-XXX
256Kx16
MIL-STD-883
256Kx16
I/O9-16
WMS256K16L-XXX
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PDF
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Untitled
Abstract: No abstract text available
Text: WMS256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 PIN CONFIGURATION FOR WMS256K16-XXX FEATURES Access Times 17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available 44 CSOJ Packaging • 44 pin Ceramic SOJ Package 102 44 FlatpacK
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Original
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WMS256K16-XXX
256Kx16
MIL-STD-883
256Kx16
I/O9-16
WMS256K16L-XXX
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PDF
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WSF128K16-XXX
Abstract: No abstract text available
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES n TTL Compatible Inputs and Outputs n Access Times of 35ns SRAM and 70ns (FLASH) n n Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground
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Original
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WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
120ns
WSF128K16-XXX
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PDF
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IRF6644
Abstract: IRF6644TR1
Text: PD - 96908E IRF6644 DirectFET Power MOSFET l l l l l l l l l Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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96908E
IRF6644
IRF6644
IRF6644TR1
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PDF
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96908B
Abstract: IRF6644 96908
Text: PD - 96908B IRF6644 DirectFET Power MOSFET l l l l l l l l l Typical values unless otherwise specified Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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Original
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96908B
IRF6644
IRF6644
96908B
96908
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PDF
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marking code SJ transistors
Abstract: IRF6644 IRF6644TR1
Text: PD - 96908E IRF6644 DirectFET Power MOSFET l l l l l l l l l Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching
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Original
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96908E
IRF6644
marking code SJ transistors
IRF6644
IRF6644TR1
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96908E IRF6644 DirectFET Power MOSFET Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching
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Original
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96908E
IRF6644
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PDF
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Untitled
Abstract: No abstract text available
Text: TT W MS256K16-XDLX WHITE /M ICROELECTRONICS 256Kx16 MONOLITHIC SRAM, S M D 5962-96902 pending PRELIMINARY* FEATURES • A c c e s s T im e s 1 7 , 2 0 , 2 5 , 3 5n S D a ta I/O C o m p a t i b l e w i t h 3 .3 V d e v ic e s ■ M IL - S T D - 8 8 3 C o m p li a n t D e v ic e s A v a i l a b l e
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OCR Scan
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MS256K16-XDLX
256Kx16
256K16
03HXX*
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PDF
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JBYW80
Abstract: L4960H cogema magnetics 58206
Text: {Z T ^ 7 # S G S TH O M S O N ^ 0 ^© iL [l g 1ir^(Q ^0(gi L4960 2.5A POWER SWITCHING REGULATOR P R ELIM IN A R Y D A TA • 2 .5 A O UTPUT C U R R E N T • 5.1V TO 4 0V O UTPUT V O L T A G E RANGE • PRECISE • HIG H SW ITCHING FREQ U EN C Y • VERY
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OCR Scan
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L4960
L4960
150KHz
L4960s
JBYW80
L4960H
cogema
magnetics 58206
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ 7 *7 Æ U S C S - T H O M S O N [* [^ & E m r [iM 0 (g § L4962 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A TA • 1.5 A O U T P U T C U R R E N T • 5 .1 V T O 4 0 V O U T P U T V O L T A G E R A N G E • P R E C IS E ( ± 2 % O N -C H IP R E F E R E N C E
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OCR Scan
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L4962
35/Lt
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PDF
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Untitled
Abstract: No abstract text available
Text: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range
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OCR Scan
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MS256K16-XXX
256Kx16
256Kx16
WMS256K16-XXX
AO-17
02HMX
03HMX
01HNX
02HIMX
03HNX
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PDF
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FD110
Abstract: No abstract text available
Text: a WSF128K16-XXX WHITE /MICROELECTRONICS 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • C om m ercial, Industrial and M i lita r y Te m p e ra tu re Ranges ■ A cce ss Tim es of 35ns SRAM and 70ns (FLASH) ■ TTL C om p a tib le Inputs and O utputs
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OCR Scan
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WSF128K16-XXX
128Kx16
120ns
66-pin,
120ns
FD110
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PDF
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Untitled
Abstract: No abstract text available
Text: VZA M/HITE /M IC R O E L E C T R O N IC S WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • C om m ercial, Ind u stria l and M ilita ry T e m pe ratu re Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om p atible Inputs and O utputs
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OCR Scan
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WSF128K16-XXX
128Kx16
120ns
120ns
01HXX
128KX
02HYX
01HMX
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PDF
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SF512K16
Abstract: No abstract text available
Text: WHITE / M I C R O E L E C T R O N I C S W SF512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)
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OCR Scan
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SF512K16-XXX
512Kx16
120ns
68-lead,
120ns
01HXX
02HXX
01HMX
SF512K16
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PDF
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Untitled
Abstract: No abstract text available
Text: 77 WMS256K16-XXX M/HITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns Data I/O C o m p a tib le w it h 3.3V devices ■ 2 V M in im u m Data R etention fo r b a tte ry back up o pe ra tio n M IL-STD -883 C o m p lia n t Devices A v a ila b le
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OCR Scan
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WMS256K16-XXX
256Kx16
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PDF
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Untitled
Abstract: No abstract text available
Text: t t W MS256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation
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OCR Scan
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MS256K16-XDLX
256Kx16
MIL-STD-883
256Kx16
256K16
01HXX'
03HXX'
256KX
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PDF
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Untitled
Abstract: No abstract text available
Text: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n
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OCR Scan
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MS256K16-XXX
256Kx16
256Kx16
02HMX
03HMX
01HNX
02HIMX
03HNX
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PDF
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Untitled
Abstract: No abstract text available
Text: WMS256K16-XXX Hi-REUÄBiUTY PRODUCT 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Tim es 17, 20, 25, 35ns 2V M inim um Data Retention for battery back up operation ■ M IL-STD-883 C om pliant Devices A vailable C om m ercial, Industrial and M ilitary Tem perature Range
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OCR Scan
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WMS256K16-XXX
256Kx16
WMS256K16-XX5ns
02HNX
03HNX
04HNX
01HTX
02HTX
03HTX
04HTX
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PDF
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)
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OCR Scan
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WSF128K16-XXX
128Kx16
120ns
01HXX
01HYX
02HXX
02HYX
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PDF
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX M/HITE /MICROELECTRONICS g 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Com m ercial, Industrial and M ilitary Tem perature Ranges ■ A c c e s s Tim e s o f 35ns SRA M and 70ns (FLASH ) ■ T T L C om patible Inputs and Outputs
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OCR Scan
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WSF128K16-XXX
128Kx16
120ns
66-pin,
Progr120ns
01HXX
01HYX
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PDF
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