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    T9 TRANSISTOR Search Results

    T9 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    T9 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: T9 / R9 Long Range RF Modules Features • FM Narrow Band Crystal Stabilised • Range up to 1,000 Metres • 868MHz / 433MHz Versions • 4 channel versions • 434.075MHz • 433.920MHz • 434.225MHz • 434.525MHz • Miniature SIL Package • Data Rates Up To 57Kbps


    Original     		PDF 868MHz 433MHz 075MHz 920MHz 225MHz 525MHz 57Kbps 13dBm 121dBm

    ARCO 0.1 Z

    Abstract: transformer 0-12v VRF151FLMP VK200-4B
    Text: VRF151FL VRF151FLMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF151FL VRF151FLMP 175MHz 30MHz, 175MHz, MRF151 com/micnotes/1818 ARCO 0.1 Z transformer 0-12v VRF151FLMP VK200-4B

    transformer 220-12

    Abstract: vrf150 VRF150FL
    Text: VRF150FL VRF150FLMP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF150FL VRF150FLMP 150MHz VRF150 150MHz, 30MHz, MRF150 com/micnotes/1818 transformer 220-12

    500 watts amplifier schematic diagram

    Abstract: 100B4R7 700 watts power amplifier circuit diagram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier


    Original     		PDF MRF21060 MRF21060S 500 watts amplifier schematic diagram 100B4R7 700 watts power amplifier circuit diagram

    T16 C6

    Abstract: 500 watts amplifier schematic diagram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060S MRF19060 T16 C6 500 watts amplifier schematic diagram

    j340 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21090 MRF21090S j340 motorola

    CDR33BX104AKWS

    Abstract: MRF21060 MRF21060S
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060S MRF21060 CDR33BX104AKWS MRF21060S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060R3 MRF21060S MRF21060SR3

    T17 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19060/D MRF19060 MRF19060S MRF19060/D T17 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S MRF21090/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3

    j340 motorola make

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060S MRF21060/D

    100B100JCA500X

    Abstract: 465B MRF21090 MRF21090S
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S MRF21090 100B100JCA500X 465B MRF21090S

    2001RF

    Abstract: J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3 GX03005522 NI-780
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060R3 MRF21060SR3 MRF21060 MRF21060R3 2001RF J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060SR3 GX03005522 NI-780

    SMD Transistors w04

    Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
    Text: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package


    Original     		PDF OT143 BFS17W BFS17AW S858TA3 TSDF1205W S503TRW TSDF1220W S504TRW TSDF1250W S505TRW SMD Transistors w04 smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5

    11105 IC

    Abstract: pMOS transistor
    Text: February t9^7 PRELIMINARY ro ML4865 High Voltage High Current Boost Regulator GENERAL DESCRIPTION FEATURES The M L4865 is a high voltage, continuous conduction boost regulator designed for DC to D C conversion in multiple cell battery powered systems. Continuous


    OCR Scan     		PDF ML4865 200kH L4865 ML4865CS-2 ML4865ES-2 11105 IC pMOS transistor

    power factor PIC circuit

    Abstract: dc constant speed control motor drive circuit pic SIEMENS MOTOR load sensor pic circuit TLE 4207 G equivalent PIC dc motor speed control 5208-6G siemens motor series 9 motor control using PIC
    Text: 6 Protection Circuits 6.1 General T T9 task of protection circuits is to protect the motor, the PIC itself, and the other components of the circuit, T 'i:j hazards are • overvoltage, • overcurrent • overtemperature, As described above in the section on disturbances,


    OCR Scan     		PDF 5208-6G power factor PIC circuit dc constant speed control motor drive circuit pic SIEMENS MOTOR load sensor pic circuit TLE 4207 G equivalent PIC dc motor speed control 5208-6G siemens motor series 9 motor control using PIC

    I682

    Abstract: T-973 accm sot23-5 682 SOT23
    Text: T9-73 05; R e v O ; 10/97 A lif lX I A I Sw itched-Capacitor Voltage Doublers G eneral D escription Oscillator control circuitry and four power M O SFET switches are included on-chip. The MAXI 682 operates at 12kHz and the MAX1683 operates at 35kHz. A typi­


    OCR Scan     		PDF T9-73 1682/MAX 682/MAXI 110pA 12kHz MAX1683 35kHLD I682 T-973 accm sot23-5 682 SOT23

    TH3L10Z

    Abstract: TH3L10 TH3L20 T7K40 2SCI469 2SD574 2sc3427 dica20 T5L20 Tk3Lio
    Text: ? • SEMICONDUCTOR ARISTO-CRAFT t,b « E IA J No. !o A VOBO VOEO •'(V ) (V) T7T5 2SB983 -6 0 -5 0 -7 T 7S 5 2 S D I3 4 5 60 50 7 T 7S 3 2SC3427 50 30 7 T I0 S 4 2SC3428 60 40 10 450 360 PT hFE (W ) (M S ) to n . 40 70 100 50 85 7<4"j:y > /7 max. t9 tf


    OCR Scan     		PDF 2SB983 2SDI345 2SC3427 2SC3428 T3M36 2SGI466 T3M40 2SOI467 TI0M36 2SCI468 TH3L10Z TH3L10 TH3L20 T7K40 2SCI469 2SD574 dica20 T5L20 Tk3Lio

    NJ01

    Abstract: No abstract text available
    Text: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect


    OCR Scan     		PDF 00D37S1 T-91-01 NJ01

    T17 TRANSISTOR

    Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6
    Text: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches


    OCR Scan     		PDF LA730 7301M 6CM61E) vii555Vpp 630kK& 2J40H- T17 TRANSISTOR sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6

    AC27

    Abstract: No abstract text available
    Text: 551 2SC o VHF O ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR Æ f X teffl ffl o o 5s V D y N P N X t : 5 > * i / ? l ; 7 l s - t B h ÿ y 5J Z S > fè VHp Power Ampi ¡ fi er Appi i cat ion s Frequency Multipl ier Appi ¡cations • c l 175UHZ -C P 0 = 13.5W Min. )


    OCR Scan     		PDF 175MHz 260MHz 400MHz 00LLE0T0R A027A 500mA 150mA 250mA 200MHz AC27