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    MRF21060 Search Results

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    MRF21060 Price and Stock

    Rochester Electronics LLC MRF21060R3

    RF MOSFET LDMOS 28V NI780
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    DigiKey MRF21060R3 Bulk 729 8
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    Motorola Semiconductor Products MRF21060

    TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
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    Quest Components MRF21060 12
    • 1 $58.5
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    MRF21060 26
    • 1 $90
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    Motorola Semiconductor Products MRF21060S

    MOSFET Transistor, N-Channel, SOT-391BVAR
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    Quest Components MRF21060S 127
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    Freescale Semiconductor MRF21060R3

    RF S Band, N-Channel Power MOSFET
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    Rochester Electronics MRF21060R3 729 1
    • 1 $41.4
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    MRF21060 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF21060 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF21060 Freescale Semiconductor MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs Original PDF
    MRF21060 Motorola RF Power Field Effect Transistor Original PDF
    MRF21060 Motorola MRF21060, MRF21060S 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF21060LR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF21060LSR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF21060R3 Motorola RF Power Field Effect Transistors Original PDF
    MRF21060S Freescale Semiconductor FET, Enhancement, N Channel, 2 VThreshold Original PDF
    MRF21060SR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF21060SR3 Motorola RF Power Field Effect Transistors Original PDF

    MRF21060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and


    Original     		PDF MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF21060 Rev. 8, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060S MRF21060/D

    CDR33BX104AKWS

    Abstract: MRF21060 MRF21060LR3 MRF21060LSR3
    Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3 CDR33BX104AKWS MRF21060 MRF21060LSR3

    CDR33BX104AKWS

    Abstract: MRF21060 MRF21060S
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060S MRF21060 CDR33BX104AKWS MRF21060S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21060 MRF21060R3 MRF21060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier


    Original     		PDF Therm2170 MRF21060 MRF21060R3 MRF21060SR3

    500 watts amplifier schematic diagram

    Abstract: 100B4R7 700 watts power amplifier circuit diagram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier


    Original     		PDF MRF21060 MRF21060S 500 watts amplifier schematic diagram 100B4R7 700 watts power amplifier circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060R3 MRF21060S MRF21060SR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060S MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21060/D MRF21060 MRF21060R3 MRF21060S MRF21060SR3 MRF21060/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21060R3 MRF21060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21060/D MRF21060R3 MRF21060SR3 MRF21060/D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21060 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and


    Original     		PDF MRF21060 MRF21060R3 MRF21060SR3

    CDR33BX104AKWS

    Abstract: MRF21060 MRF21060LR3 MRF21060LSR3
    Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and


    Original     		PDF MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3 CDR33BX104AKWS MRF21060 MRF21060LSR3

    Johanson

    Abstract: CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21060R3 MRF21060SR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF21060/D MRF21060R3 MRF21060SR3 MRF21060R3 Johanson CDR33BX104AKWS MRF21060 MRF21060SR3

    2001RF

    Abstract: J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3 GX03005522 NI-780
    Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21060/D MRF21060 MRF21060R3 MRF21060SR3 MRF21060 MRF21060R3 2001RF J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060SR3 GX03005522 NI-780

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21060 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and


    Original     		PDF MRF21060 MRF21060R3 MRF21060SR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060S MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier


    Original     		PDF The170 MRF21060 MRF21060R3 MRF21060S MRF21060SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and


    Original     		PDF MRF21060R3 MRF21060SR3

    diode C531

    Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
    Text: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UPF21060 MRF21060 diode C531 c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217

    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index