Untitled
Abstract: No abstract text available
Text: ADVANCE M IC.nRwOi'« N I iih T4LC16270 256KX 16 DRAM 2 5 6 K X 16 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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T4LC16270
256KX
512-cycle
40-Pin
MT4LC16270
MT4LC1627Q
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T4LC 16270 256K X 16 DRAM U |=n D N 256K x 16 DRAM DRAM FEATURES PIN ASSIGNMENT Top View) • Single +3.3V ±0.3V power supply’1' • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process
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512-cycle
40-Pin
MT4LC16270
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDU CT OR INC blllSMT DDOTflQl T7T • PIRN b7E D PRELIMINARY MICRON ■ M T4LC 16270 256Kx 16 WIDE DRAM SEMICONDUCTOR. INC. WIDE DRAM 2 5 6 KX 1 6 DRAM 3.3V EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply*
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256Kx
500mW
512-cycle
MT4LC16270
CYCLE24
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Untitled
Abstract: No abstract text available
Text: ADVANCE T4LC16270 256K X 16 DRAM MICRON DRAM 256 K X 1 6 DRAM FEATURES PIN ASSIGNMENT (Top View • Single +3.3V ±0.3V power supply* • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM O S silicon-gate process • Low power, 0.3m W standby; 165mW active, typical
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MT4LC16270
165mW
512-cycle
40-Pin
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