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    T495X106K035AS Price and Stock

    KEMET Corporation T495X106K035AS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics T495X106K035AS 926
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    T495X106K035AS 795 3
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    • 100 $1.2188
    • 1000 $0.6825
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    T495X106K035AS 278
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    Quest Components T495X106K035AS 1,308
    • 1 $2.4
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    • 1000 $0.99
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    T495X106K035AS 862
    • 1 $6.9576
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    • 100 $6.9576
    • 1000 $3.4788
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    T495X106K035AS 740
    • 1 $2.15
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    • 100 $1.075
    • 1000 $0.86
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    T495X106K035AS 636
    • 1 $2.6
    • 10 $2.6
    • 100 $2.6
    • 1000 $0.845
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    T495X106K035AS 542
    • 1 $2.4
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    T495X106K035AS 537
    • 1 $1.5
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    T495X106K035AS 157
    • 1 $2.49
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    • 100 $1.245
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    ComSIT USA T495X106K035AS 215
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    KEMET Corporation T495X106K035ATE250

    Tantalum Capacitors - Solid SMD 35V 10uF 2917 10% ESR=250mOhms
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    TTI T495X106K035ATE250 Reel 3,000 500
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    T495X106K035ATE250 Cut Tape 580 10
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    • 10 $1.48
    • 100 $1.48
    • 1000 $1.48
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    KEMET Corporation T495X106K035ATE175

    Tantalum Capacitors - Solid SMD 35V 10uF 2917 10% ESR=175mOhms
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    TTI T495X106K035ATE175 Reel 1,500 500
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    KEMET Corporation T495X106K035ATE200

    Tantalum Capacitors - Solid SMD 35V 10uF 2917 10% ESR=200mOhms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI T495X106K035ATE200 Reel 500
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    T495X106K035AS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T495X106K035AS KEMET CAPACITOR 10UF 35V LOW ESR TANTALUM Original PDF
    T495X106K035ASE175 KEMET CAP 10UF 2.5V 10% TANT SMD-7343-43 TR-7-PL SN100% LOWESR-0175 Original PDF
    T495X106K035ASE250 KEMET CAP 10UF 2.5V 10% TANT SMD-7343-43 TR-7-PL SN100% LOWESR-0250 Original PDF

    T495X106K035AS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GR331

    Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


    Original     		PDF N1200 TZ03Z2R3E169B00 TZ03Z050E169B00 TZ03Z070E169B00 TZ03Z100E169B00 TZ03T110E169B00 TZ03R200E169B00 TZ03R300E169B00 TZ03P450E169B00 GR331 en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21

    CD 7343

    Abstract: T495D226K020AS T495D686K006AS T495V107K006AS T495X475K050AS 7343 capacitor
    Text: Type T495 Solid Tantalum Chip Capacitors Low ESR, High Ripple Current, Solid Tantalum Chip Capacitors Highlights ♦ ♦ ♦ ♦ ♦ ♦ Designed for very low ESR High ripple current capability High surge current capability Taped and reeled per EIA RS 481-1


    Original     		PDF 535BAAC, T495D106K035AS 7343H T495X106K035AS T495D156K035AS T495X156K035AS T495X226K035AS CD 7343 T495D226K020AS T495D686K006AS T495V107K006AS T495X475K050AS 7343 capacitor

    3528

    Abstract: T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS
    Text: Go ahead, it’s your move . . . . Design a KEMET Tantalum Chip into your future KEMET is offering five Tantalum Chip Engineering Kits to meet your diverse design needs for the future. KEMET’s line of Engineering Kits for Tantalum Chips will include a T495 Low ESR Kit, an Extended Range T491 Kit, a Standard T491


    Original     		PDF T520V157M006AS T520D337M006AS T520X477M006AS T520D107M010AS T520D157M010AS T520X337M010AS F3217D 3528 T495X476K020AS Tantalum Capacitor kemet 10 uF T495X475K050AS T495X337K006AS kemet Tantalum T491A475K006AS T495X107K016AS T491D107K006AS T491B106K020AS

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085

    j340 motorola make

    Abstract: MRF21085
    Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085R3 MRF21085LSR3 j340 motorola make

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    MRF19085

    Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1
    Text: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19085/D MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 MRF19085 MRF19085R3 MRF19085SR3 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 100B5R1

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085R3 MRF21085LSR3

    MRF19090

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF19090 Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and


    Original     		PDF MRF19090 MRF19090R3 MRF19090SR3

    Untitled

    Abstract: No abstract text available
    Text: Type T495 Solid Tantalum Chip Capacitors Low ESR, High Ripple Current, Solid Tantalum Chip Capacitors ♦ ♦ ♦ ♦ E BS O ♦ Designed for very low ESR High ripple current capability High surge current capability Taped and reeled per EIA RS 481-1 Low ESL <2.5 nH ESL


    Original     		PDF 535BAAC,

    MRF21085LR3

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent

    MRF21045

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21045LR3 MRF21045LSR3 MRF21045

    GX03005522

    Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282

    ATC 100C

    Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series

    ferroxcube ferrite beads

    Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414

    MRF284

    Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH

    T495D226K020AS

    Abstract: 7343H 7343X MALLORY 150 M CAPACITORS MALLORY CAPACITORS 160 series
    Text: Type T495 - Chips Solid Tantalum Capacitors Designed for Very Low ESR { { High Ripple Current Capability High Surge Current Capability { 100% Accelerated Steady-State Aging { 100% In-Line Multi-Cycle Surge Current Conditioning { Low Equivalent Series Inductance <2.5 nH ESL


    Original     		PDF -55gC 125gC -55gC; 7343H T495D336K016AS T495D476K016AS T495D107K016AS T495X107K016AS T495X475K050AS T495D226K020AS 7343X MALLORY 150 M CAPACITORS MALLORY CAPACITORS 160 series

    TH 2190 mosfet

    Abstract: CDR33BX104AKWS MRF21180 MRF21180R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6 TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6

    MRF21085

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085/D MRF21085R3 MRF21085SR3 MRF21085LSR3 MRF21085/D MRF21085

    MMIC code N10

    Abstract: HPIB CONTROLLER IC 2540-6002UB 93F2330 2520-6002UB MC100 MC100ES6222 MC100ES8111 MC92602 MC92602DVBUG
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC92602DVBUG 3/2004 Rev. 2 MC92602 Reduced Interface SerDes Design Verification Board User’s Guide Device Supported: MC92602 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF MC92602DVBUG MC92602 MMIC code N10 HPIB CONTROLLER IC 2540-6002UB 93F2330 2520-6002UB MC100 MC100ES6222 MC100ES8111 MC92602 MC92602DVBUG

    MRF5P21180

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21180