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    MRF21085LR3 Search Results

    MRF21085LR3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF21085LR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF

    MRF21085LR3 Datasheets Context Search

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    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085

    MRF21085LR3

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21085 MRF21085LR3 MRF21085LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 8, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original
    PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21085--1 MRF21085LR3

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original
    PDF MRF21085 MRF21085LR3

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original
    PDF

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21085--2 MRF21085LSR3 MRF21085