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    T3J2 Price and Stock

    Infineon Technologies AG S6T3J200361A176A2

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    Infineon Technologies AG S6T3J200311A208A2

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    Infineon Technologies AG S6T3J200361A145A2

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    Samsung Semiconductor SPHWHAHDNF27YZT3J2

    LED COB LC019D NEUT WHT SQ 4000K
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    SMC Corporation of America ZPB-T3J25-N01

    BUFFER ASSEMBLY, HEAVY DUTY, ZP SERIES | SMC Corporation ZPB-T3J25-N01
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    RS ZPB-T3J25-N01 Bulk 5 Weeks 1
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    T3J2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MM1185

    Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
    Text: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.


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    PDF BDV65; BDV65B; 0D433L0 T-33-Z BDV64, BDV65 7Z77501 MM1185 BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 dv65 BDV64 LP 7510 7Z82768

    3m421

    Abstract: "Silicon Power Transistors" T8480
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • TllDflEb D D M 3 3 m 421 H P H I N T -31-Z 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0 -2 2 0 plastic envelope, designed fo r use in audio output stages and general am plifier and switching applications.


    OCR Scan
    PDF BDT82; BDT84 BDT86; BDT88 -31-Z maxZ92354 3m421 "Silicon Power Transistors" T8480

    2SC2407 equivalent

    Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The


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    PDF L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600

    BDT88

    Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan
    PDF BDT82; BDT84 BDT86; BDT88 T-31-23 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87