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    T331 Search Results

    T331 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DT3316P-102MLB Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Ferrite-Core, SMD, 5137, ROHS COMPLIANT Visit Coilcraft Inc
    DT3316P-152MLD Coilcraft Inc General Purpose Inductor, 1.5uH, 20%, 1 Element, Ferrite-Core, SMD, 5137, ROHS COMPLIANT Visit Coilcraft Inc
    DT3316P-223 Coilcraft Inc General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 5137, Visit Coilcraft Inc Buy
    DT3316P-333 Coilcraft Inc General Purpose Inductor, 33uH, 20%, 1 Element, Ferrite-Core, SMD, 5137 Visit Coilcraft Inc Buy
    DT3316P-474 Coilcraft Inc General Purpose Inductor, 470uH, 20%, 1 Element, Ferrite-Core, SMD, 5137 Visit Coilcraft Inc Buy
    DT3316P-684MLB Coilcraft Inc General Purpose Inductor, 680uH, 20%, 1 Element, Ferrite-Core, SMD, 5137, ROHS COMPLIANT Visit Coilcraft Inc
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    T331 Price and Stock

    TAIYO YUDEN NS12555T331MN

    FIXED IND 330UH 960MA 410MOHM SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NS12555T331MN Reel 500 500
    • 1 -
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    • 100 -
    • 1000 $0.55262
    • 10000 $0.51697
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    NS12555T331MN Cut Tape 200 1
    • 1 $1.16
    • 10 $0.98
    • 100 $0.6952
    • 1000 $0.64176
    • 10000 $0.64176
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    Avnet Americas NS12555T331MN Reel 7 Weeks 2,000
    • 1 -
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    • 10000 $0.64017
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    Mercury Electronic Ind Co Ltd MQF574T33-12.288-1.0/-40+85

    XTAL OSC TCXO 12.2888MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MQF574T33-12.288-1.0/-40+85 250 3
    • 1 -
    • 10 $30.75
    • 100 $18.25
    • 1000 $16.45
    • 10000 $16.45
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    Mercury Electronic Ind Co Ltd VMQF574T33-10.245-1.0/-40+85

    XTAL OSC VCTCXO 10.2450MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VMQF574T33-10.245-1.0/-40+85 250 3
    • 1 -
    • 10 $30.75
    • 100 $18.25
    • 1000 $16.45
    • 10000 $16.45
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    Mercury Electronic Ind Co Ltd VMQF574T33-16.386-1.0/-40+85

    XTAL OSC VCTCXO 16.3860MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VMQF574T33-16.386-1.0/-40+85 250 3
    • 1 -
    • 10 $30.75
    • 100 $18.25
    • 1000 $16.45
    • 10000 $16.45
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    Mercury Electronic Ind Co Ltd MQF574T33-100.000-1.0/-40+85

    XTAL OSC TCXO 100.0000MHZ CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MQF574T33-100.000-1.0/-40+85 250 3
    • 1 -
    • 10 $30.75
    • 100 $18.25
    • 1000 $16.45
    • 10000 $16.45
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    Find more T331 price and stock on Findchips.com

    T331 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    T3314 Jiann Wa Electronics Triangular Type LED Lamp Scan PDF
    T3314P Jiann Wa Electronics Triangular Type LED Lamp Scan PDF
    T331A Unknown STANDARD SPECIFICATIONS Original PDF

    T331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WD04

    Abstract: 24Blocks
    Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original     		PDF M5M29KB/T331AVP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331AVP 432-bit REJ03C0169 WD04 24Blocks

    T3312

    Abstract: MF Electronics T1312 T1310 T3310 T1312 MF Electronics T3312 transistor smd code marking 420
    Text: SURFACE MOUNT T1310, T1312, T3310, T3312 FIXED/ TRISTATE OSCILLATORS Industrial Temperature Low Jitter -40 to +85ºC Surface Mount, 3.3 V 20 KHz to 100 MHz Guaranteed Jitter is less than 5 ps RMS from positive peak to positive peak. No multipliers are used.


    Original     		PDF T1310, T1312, T3310, T3312 NY10801 T3312 MF Electronics T1312 T1310 T3310 T1312 MF Electronics T3312 transistor smd code marking 420

    MAKING A10

    Abstract: Multi Chip Memory
    Text: Renesas LSIs Preliminary M6MGB/T331S4BKT Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM


    Original     		PDF M6MGB/T331S4BKT 432-BIT 16-BIT/4 304-WORD 304-BIT 144-WORD 16-BIT/524 288-WORD M6MGB/T331S4BKT 32M-bit MAKING A10 Multi Chip Memory

    52-pin TSOP

    Abstract: No abstract text available
    Text: Renesas LSIs Preliminary M5M29KB/T331ATP Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T331ATP provides for Software Lock Release function.


    Original     		PDF M5M29KB/T331ATP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331ATP 432-bit REJ03C0235 52-pin TSOP

    Untitled

    Abstract: No abstract text available
    Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original     		PDF M5M29KB/T331AVP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331AVP 432-bit REJ03C0169

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Renesas LSIs M6MGB/T331S8AKT Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM


    Original     		PDF M6MGB/T331S8AKT 432-BIT 16-BIT 304-WORD 608-BIT 288-WORD 576-WORD M6MGB/T331S8AKT 32M-bit

    making a10

    Abstract: No abstract text available
    Text: Preliminary Renesas LSIs Notice: This is not a final specification. Some parametric limits are subject to change. M6MGB/T331S8BKT 33,554,432-BIT 2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM


    Original     		PDF M6MGB/T331S8BKT 432-BIT 16-BIT 304-WORD 608-BIT 288-WORD 576-WORD M6MGB/T331S8BKT 32M-bit making a10

    8 bit nor flash

    Abstract: No abstract text available
    Text: Renesas LSIs M6MGB/T331S8BKT 33,554,432-BIT 2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description The M6MGB/T331S8BKT is a Stacked micro Multi Chip


    Original     		PDF M6MGB/T331S8BKT 432-BIT 16-BIT 304-WORD 608-BIT 288-WORD 576-WORD M6MGB/T331S8BKT 32M-bit 8 bit nor flash

    Untitled

    Abstract: No abstract text available
    Text: MF1501-02 IEEE1394 Controller S1R72805 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF MF1501-02 IEEE1394 S1R72805 E-08190 S1R72805F00A

    S 0319

    Abstract: 60868-2
    Text: T em ic AN715 S c m i c i n il u c i o r s Designing Low-Voltage DC/DC Converters with the Si9145 Bijan E M ohandes and Chae Lee Introduction T he Siliconix S i9 145 sw itch m o d e co n tro lle r IC is d e sig n ed to m ake dc-to-dc co n v ersio n sm aller and m ore


    OCR Scan     		PDF AN715 Si9145 i9145 12-Jan-95 S 0319 60868-2

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    2SB1334

    Abstract: 2SD1778 3CU500 1e0a
    Text: h 7 'y sy /T ra n s is to rs 2SB1334 - 7 = 3 3 - / 9 fl ^ a j f c ^ ^ i a t S ^ / L o w F re q . P o w e r A m p . Epitaxial Planar P N P Silicon Transistor


    OCR Scan     		PDF 2SB1334 2SD1778 O-220 To-25 Tc-23-C) IcAti--1A/-03A 2SB1334 T-33-19 3CU500 1e0a

    RXB12350Y

    Abstract: No abstract text available
    Text: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.


    OCR Scan     		PDF RXB12350Y 0DMb54b FO-91. t-33-13 RXB12350Y

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948

    BLV98

    Abstract: No abstract text available
    Text: 41E D PHILIPS INTERNATIONAL • 711002h 002740b b H P H I N '' BLV98 r-33-n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 M Hz communications band.


    OCR Scan     		PDF 711002h 002740b BLV98 r-33-a OT-171 7Z9433B BLV98

    D441

    Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
    Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector


    OCR Scan     		PDF BD433/435/437/439/441 O-126 BD434, BD436, BD438, BD440 BD442 711DflSb BD433 D441 BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437

    BLY89A

    Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
    Text: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every


    OCR Scan     		PDF 711002b BLY89A -T-33-/3 PL-25W BLY89A transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2

    RZ2731B60W

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.


    OCR Scan     		PDF RZ2731B60W 711002b 004b5Ã RZ2731B60W tRANSISTOR 2.7 3.1 3.5 GHZ cw

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    BLX13

    Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
    Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested


    OCR Scan     		PDF 711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971

    RZ3135B50W

    Abstract: No abstract text available
    Text: - 3 3 ^ 3 RZ3135B50W PHILIPS INTERN A T I O N A L SbE D • 711DaEt. OOHbLOS 124 * P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar e p ita xia l m icrow ave p o w e r tran sisto r, intended fo r use in a common-base class-C broadband pulse p ow er a m p lifie r w ith a freq u e n cy range o f 3.1 to 3.5 GHz.


    OCR Scan     		PDF RZ3135B50W 711Dflat T-33-13 711002b 004bb0b RZ3135B50W

    b0349

    Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
    Text: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage


    OCR Scan     		PDF 00QTM31 BF870SBF872S T0126 15A3DIN b0349 BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570

    BU 508 transistor

    Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
    Text: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique


    OCR Scan     		PDF T-33-13 DIN41 T0126 15A3DIN BU 508 transistor FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3

    TRANSISTOR MARKING CODE R2A

    Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1
    Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage


    OCR Scan     		PDF DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1