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    T2D48

    Abstract: FPM DRAM 30-pin SIMM 0/MT2D48
    Text: ADVANCE T2D48 4 MEG X 8 DRAM MODULE ¡V U C F O N DRAM MODULE IV IU U U L t. 4 MEG x 8 4 MEG ABYTE -5VFAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM O S silicon-gate process


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    PDF MT2D48 30-pin, 500mW 048-cycle 30-Pin T2D48M-6 T2D48 FPM DRAM 30-pin SIMM 0/MT2D48

    T2D48

    Abstract: L99D
    Text: PRELIMINARY I^ IIC R O N 4 MEG 4 MEG DRAM MODULE X 8 X T2D48 DRAM MODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply


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    PDF MT2D48 30-pin, 400mW 048-cycle 30-Pin T2D48M-6 A0-A10 T2D48 L99D

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE T2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM


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    PDF MT2D48 30-pin T2D48M-6 110ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |U |IC R O N 4 MEG DRAM MODULE 4 MEG T2D48 DRAM MODULE X 8 X 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V ±10% power supply • Low power, 6mW standby; 550mW active, typical


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    PDF MT2D48 30-pin, 550mW 048-cycle 30-Pin A0-A10;