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    Untitled

    Abstract: No abstract text available
    Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,


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    T0258AA SM3S42* T0258AA FT0258AA HDS100 PDF

    JB35

    Abstract: Dual Schottky Rectifiers
    Text: SM3S42* DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryitia substrates ensures the lowest possible thermal impedance, thereby decreasing losses and providing increased efficiency. Typical applications include


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    T0258AA SM3S42* MIL-S-19500 3S42PDT SM3S42 JB35 Dual Schottky Rectifiers PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,


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    T0257AB SM8S42* 15054AA T0258AA FT0258AA HDS100 PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


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    DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF

    60HQ100

    Abstract: JANTX1N6392
    Text: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8


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    5EQ100 8EQ045 15CLQ100 20CLQ045 30FQ045 1N6391 JAN1N6391 JANTX1N6391 JANTXV1N6391 00-203AA 60HQ100 JANTX1N6392 PDF

    dual diode TO254AA 600V

    Abstract: No abstract text available
    Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package


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    1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


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    SM6F151* SM6F251* SM6F351* SM6F451* T0254AA T0258AA FT0258AA HDS100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,


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    T0257AB SM8U22* SM8U42* SM8U52* SM8U62* T0258AA FT0258AA HDS100 PDF

    T0254AA

    Abstract: T0257AA
    Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,


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    000301S T0257AA SM1S41 SM1S01 T0258AA FT0258AA HDS100 T0254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: G o v e rn m e n t • ‘,a5S1,;’2 o o i b i ? 3 Mm H I M * S o ac e Pro d u cts INTERNATIONAL RECTIFIER u p a i f G i IU U U U IO O th e r Products bSE » Fro m IR S c h o ttk y — H ig h Reliability/Mil Qualified Pari Number VRRM lF AV @ Tc Vf M >FM


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    5EQ100 8EQ045 15CLQ100 20CLQ045 30FQ045 1N6391 JAN1N6391 JANTX1N6391 JANTXV1N6391 00-203AA PDF

    JANTX2N7334

    Abstract: irfy430
    Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6


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    irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430 PDF

    Untitled

    Abstract: No abstract text available
    Text: Other Products from IR _^ Government and Space Schottky Diode Hermetic Package 8 - 60 Amps _ Case Part Number Outline Max. Tj Number Vr r m V >F(AV)@ t C (A) 'F(AV) @ Tc (C) VFM @ >FM 25°C(V) 5EQ100 8EQ045 100 45 8 10 100 100 0.80 0.65 5 5


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    5EQ100 8EQ045 15CLQ100 20CLQ045 30FQ045 1N6391 JAN1N6391 JANTX1N6391 JANTXV1N6391 00-203AA PDF

    1061S

    Abstract: L905
    Text: SEMTECH C0RP 5fiE D • fllBTlBT ODDBT?! Eb2 ■ SET ADJUSTABLE POSITIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE SM1R41 A* This device is a three terminal adjustable positive voltage re g u la to r, requiring only two external resistors to set up the output voltage. Inherent in this device are all of the


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    T0257AA SM1R41 T0254AA T0258AA FT0258AA HDS100 1061S L905 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP 34E ]> • 0G02323 014 « S E T SINGLE MOSFETS PART# BVdss V Ros (on) (Q) lo CONTINUOUS (A@TC = 25°C) r -„ , I - 3> °1 - \ Idm CURRENT (A) pu lse PD MAX (W) CASE STYLE DUAL MOSFETS IN 6 PIN PACKAGE (RATINGS PER MOSFET) PART# BV d s s (V)


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    0G02323 T0254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP 34E D • 0002324 TSÜ DUAL ULTRAFAST RECTIFIERS PA RT# Vr w m V If (av ) trr Vf (A@ Tc = 25°C) (ns) (V @ 25 °C) -,~'3»cl-0iO C A S E STYLE SM3U62*SU SM3U42*SU SM 3U22*SU SM 3U52‘SU SM .iU>?*Slj 600 400 200 150 100 30 50 1 2 5 m 15A 30


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    SM3U62 SM3U42 T0258AA SM8U62-SU SM8U22 SM8U12 PDF

    T0254AA

    Abstract: No abstract text available
    Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low


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    T0254AA SM2F151* SM2F351* SM2F251* SM2F451* T0254AA T0258AA FT0258AA HDS100 PDF

    T0257AA

    Abstract: schottky 8a A15A T0-257AA SM1R31BSU 10A Positive Adjustable 8A Positive Adjustable
    Text: SEMTECH CORP 34E D • 0002324 TSÜ DUAL ULTRAFAST RECTIFIERS PA RT# Vr w m V If (av ) trr Vf (A@ Tc = 25°C) (ns) (V @ 25 °C) -, ~ '3 » c l - 0i O C A S E STYLE SM3U62*SU SM3U42*SU SM 3U22*SU SM 3U52‘SU SM .iU>?*Slj 600 400 200 150 100 30 50 1 2 5 m 15A


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    13S131 000232M SM3U62 T0258AA SM3U42 SM3U22 SM3U52 T0257AA schottky 8a A15A T0-257AA SM1R31BSU 10A Positive Adjustable 8A Positive Adjustable PDF

    Untitled

    Abstract: No abstract text available
    Text: O M 1N 100S A O M 5N 100S A O M 1N 100S T OM3N1QOSA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • Isolated Hermetic Metal Package Fast Switching • • •


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    IL-19500, DGG1244 PDF

    Untitled

    Abstract: No abstract text available
    Text: Government and Space Other Products from IR HEXFRED Diodes Hermetic Packages 7 - 45 Amps Part VRWM Number fF AV @ TC (A) Typ Typ Case *F(AV)@TC v f m @ ! f m *R M @ VRWM RthJC (RRM 25°c(mA) 25°C (V) (°K/W) (A) (C) Trr Outline (nS) Number HFA40HF60 600


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    HFA40HF60 HFA40HF120 HFA35HA60C HFA35HA120C T0-204AA HFA35HB60 HFA35HB120 HFA35HB60C O-254AA HFA35HB120C PDF

    solitron rectifier

    Abstract: SOLITRON Voltage Regulator SDF450JAAXHSN T0-257AA IN 5008 DIODE
    Text: PART NUMBERING SYSTEM EXAMPLE: SDF450JAAXHSN F SOLITRON DEVICES DESIGNATION 450 JAA X H 5 N GATE-SOURCE ZENER U S D OH.Y FOR MOSFET = = * = = ELECTRICAL CHARACTERISTICS MOSFET IGBT RECTIFIER. ULTRA FAST RECTIFIER GENERAL PURPOSE RECTIFIER. SCHOTTKY VOLTAGE REGULATOR


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    SDF450JAAXHSN T0-257AA T0-254AA T0-258AA T0-259AA MIL-STD-19500 MIL-STD-883 solitron rectifier SOLITRON Voltage Regulator T0-257AA IN 5008 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


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    SM4F151S* SM4F351S* SM4F251S* SM4F451S* T0254AA T0258AA FT0258AA HDS100 PDF

    FIL-3C

    Abstract: to-92 mosfet 13T13
    Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low


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    T0257AB SM8F13* SM8F33* SM8F23* SM8F43* T0258AA FT0258AA HDS100 FIL-3C to-92 mosfet 13T13 PDF

    Ig21

    Abstract: No abstract text available
    Text: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F


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    -1200V IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U T0-204AE IRGMC30F IRGMC30U Ig21 PDF

    Untitled

    Abstract: No abstract text available
    Text: in te rn atio n a l Government and Space Products I ö R Rectifier h *0 Port Number R0S on} (fÎ 8V0SS W T f= 2 S <>C (A T >= JB6“C (A) @ ïf ~ 2 5 ° C (W) Fu on Demand Number Cose Outline Key Hermetic Packages HEXFET Power MOSFETs TO-205AF (TO-39) N-Channel


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    JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 ANTX2N6796 JANTX2N6798 JANTX2N6800 PDF