Untitled
Abstract: No abstract text available
Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0258AA
SM3S42*
T0258AA
FT0258AA
HDS100
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JB35
Abstract: Dual Schottky Rectifiers
Text: SM3S42* DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryitia substrates ensures the lowest possible thermal impedance, thereby decreasing losses and providing increased efficiency. Typical applications include
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T0258AA
SM3S42*
MIL-S-19500
3S42PDT
SM3S42
JB35
Dual Schottky Rectifiers
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8S42*
15054AA
T0258AA
FT0258AA
HDS100
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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DK101/D.
O-22QI
0020-H
MFE9200
BUZ84A
BUZ90 equivalent
IRF150 MOSFET AMP circuit
BUZ35S
MTP40N06M
IRFZ22 mosfet
1RF620
MTM12N10L
MTP25N10E
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60HQ100
Abstract: JANTX1N6392
Text: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
60HQ100
JANTX1N6392
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dual diode TO254AA 600V
Abstract: No abstract text available
Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package
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1N100SA
5N100SA
OM1N100ST
3N100SA
MIL-19500,
10secs.
O-257AA
O-254AA
205Crawtord
dual diode TO254AA 600V
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM6F151*
SM6F251*
SM6F351*
SM6F451*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8U22*
SM8U42*
SM8U52*
SM8U62*
T0258AA
FT0258AA
HDS100
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T0254AA
Abstract: T0257AA
Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,
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000301S
T0257AA
SM1S41
SM1S01
T0258AA
FT0258AA
HDS100
T0254AA
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Untitled
Abstract: No abstract text available
Text: G o v e rn m e n t • ‘,a5S1,;’2 o o i b i ? 3 Mm H I M * S o ac e Pro d u cts INTERNATIONAL RECTIFIER u p a i f G i IU U U U IO O th e r Products bSE » Fro m IR S c h o ttk y — H ig h Reliability/Mil Qualified Pari Number VRRM lF AV @ Tc Vf M >FM
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
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JANTX2N7334
Abstract: irfy430
Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6
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irfg110
M0-036AB
2n7334
jantx2n7334
jantxv2n7334
irfg5110
irfg6110
2n7336
irfy430
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Untitled
Abstract: No abstract text available
Text: Other Products from IR _^ Government and Space Schottky Diode Hermetic Package 8 - 60 Amps _ Case Part Number Outline Max. Tj Number Vr r m V >F(AV)@ t C (A) 'F(AV) @ Tc (C) VFM @ >FM 25°C(V) 5EQ100 8EQ045 100 45 8 10 100 100 0.80 0.65 5 5
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
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1061S
Abstract: L905
Text: SEMTECH C0RP 5fiE D • fllBTlBT ODDBT?! Eb2 ■ SET ADJUSTABLE POSITIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE SM1R41 A* This device is a three terminal adjustable positive voltage re g u la to r, requiring only two external resistors to set up the output voltage. Inherent in this device are all of the
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T0257AA
SM1R41
T0254AA
T0258AA
FT0258AA
HDS100
1061S
L905
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 34E ]> • 0G02323 014 « S E T SINGLE MOSFETS PART# BVdss V Ros (on) (Q) lo CONTINUOUS (A@TC = 25°C) r -„ , I - 3> °1 - \ Idm CURRENT (A) pu lse PD MAX (W) CASE STYLE DUAL MOSFETS IN 6 PIN PACKAGE (RATINGS PER MOSFET) PART# BV d s s (V)
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0G02323
T0254AA
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 34E D • 0002324 TSÜ DUAL ULTRAFAST RECTIFIERS PA RT# Vr w m V If (av ) trr Vf (A@ Tc = 25°C) (ns) (V @ 25 °C) -,~'3»cl-0iO C A S E STYLE SM3U62*SU SM3U42*SU SM 3U22*SU SM 3U52‘SU SM .iU>?*Slj 600 400 200 150 100 30 50 1 2 5 m 15A 30
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SM3U62
SM3U42
T0258AA
SM8U62-SU
SM8U22
SM8U12
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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T0257AA
Abstract: schottky 8a A15A T0-257AA SM1R31BSU 10A Positive Adjustable 8A Positive Adjustable
Text: SEMTECH CORP 34E D • 0002324 TSÜ DUAL ULTRAFAST RECTIFIERS PA RT# Vr w m V If (av ) trr Vf (A@ Tc = 25°C) (ns) (V @ 25 °C) -, ~ '3 » c l - 0i O C A S E STYLE SM3U62*SU SM3U42*SU SM 3U22*SU SM 3U52‘SU SM .iU>?*Slj 600 400 200 150 100 30 50 1 2 5 m 15A
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13S131
000232M
SM3U62
T0258AA
SM3U42
SM3U22
SM3U52
T0257AA
schottky 8a
A15A
T0-257AA
SM1R31BSU
10A Positive Adjustable
8A Positive Adjustable
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Untitled
Abstract: No abstract text available
Text: O M 1N 100S A O M 5N 100S A O M 1N 100S T OM3N1QOSA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • Isolated Hermetic Metal Package Fast Switching • • •
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IL-19500,
DGG1244
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Untitled
Abstract: No abstract text available
Text: Government and Space Other Products from IR HEXFRED Diodes Hermetic Packages 7 - 45 Amps Part VRWM Number fF AV @ TC (A) Typ Typ Case *F(AV)@TC v f m @ ! f m *R M @ VRWM RthJC (RRM 25°c(mA) 25°C (V) (°K/W) (A) (C) Trr Outline (nS) Number HFA40HF60 600
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HFA40HF60
HFA40HF120
HFA35HA60C
HFA35HA120C
T0-204AA
HFA35HB60
HFA35HB120
HFA35HB60C
O-254AA
HFA35HB120C
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solitron rectifier
Abstract: SOLITRON Voltage Regulator SDF450JAAXHSN T0-257AA IN 5008 DIODE
Text: PART NUMBERING SYSTEM EXAMPLE: SDF450JAAXHSN F SOLITRON DEVICES DESIGNATION 450 JAA X H 5 N GATE-SOURCE ZENER U S D OH.Y FOR MOSFET = = * = = ELECTRICAL CHARACTERISTICS MOSFET IGBT RECTIFIER. ULTRA FAST RECTIFIER GENERAL PURPOSE RECTIFIER. SCHOTTKY VOLTAGE REGULATOR
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SDF450JAAXHSN
T0-257AA
T0-254AA
T0-258AA
T0-259AA
MIL-STD-19500
MIL-STD-883
solitron rectifier
SOLITRON Voltage Regulator
T0-257AA
IN 5008 DIODE
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Untitled
Abstract: No abstract text available
Text: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM4F151S*
SM4F351S*
SM4F251S*
SM4F451S*
T0254AA
T0258AA
FT0258AA
HDS100
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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Ig21
Abstract: No abstract text available
Text: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F
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-1200V
IRGAC30F
IRGAC30U
IRGAC40F
IRGAC40U
IRGAC50F
IRGAC50U
T0-204AE
IRGMC30F
IRGMC30U
Ig21
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Untitled
Abstract: No abstract text available
Text: in te rn atio n a l Government and Space Products I ö R Rectifier h *0 Port Number R0S on} (fÎ 8V0SS W T f= 2 S <>C (A T >= JB6“C (A) @ ïf ~ 2 5 ° C (W) Fu on Demand Number Cose Outline Key Hermetic Packages HEXFET Power MOSFETs TO-205AF (TO-39) N-Channel
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JANTX2N6782
JANTX2N6784
JANTX2N6786
JANTX2N6788
JANTX2N6790
JANTX2N6792
JANTX2N6794
ANTX2N6796
JANTX2N6798
JANTX2N6800
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