Untitled
Abstract: No abstract text available
Text: SN65LVDS307 www.ti.com SLLS834 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL TRANSMITTER FEATURES • • • • • • • • • • • • FlatLink 3G Serial-Interface Technology Compatible With FlatLink™3G Receivers Such as SN65LVDS308 Input Supports Video Interfaces up to 24-Bit
|
Original
|
PDF
|
SN65LVDS307
SLLS834
27-BIT
SN65LVDS308
24-Bit
810-Mbps
|
Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-420-308 REV.: 2 Page: 1/4 3.0mm Round Type LED Lamps PART NO. : 4204-10UYOC/S530-A3 █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust ECN: █ Package Dimensions:
|
Original
|
PDF
|
CDLE-420-308
4204-10UYOC/S530-A3
30min
|
T0250
Abstract: SN65LVDS307 SN65LVDS308 B0237 T0-2-49 0x00000F1 S0263-01 TGS 810
Text: SN65LVDS307 www.ti.com SLLS834 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL TRANSMITTER FEATURES • • • • • • • • • • • • FlatLink 3G Serial-Interface Technology Compatible With FlatLink™3G Receivers Such as SN65LVDS308 Input Supports Video Interfaces up to 24-Bit
|
Original
|
PDF
|
SN65LVDS307
SLLS834
27-BIT
SN65LVDS308
24-Bit
810-Mbps
T0250
SN65LVDS307
SN65LVDS308
B0237
T0-2-49
0x00000F1
S0263-01
TGS 810
|
B0237
Abstract: No abstract text available
Text: SN65LVDS307 www.ti.com SLLS834 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL TRANSMITTER FEATURES • • • • • • • • • • • • FlatLink 3G Serial-Interface Technology Compatible With FlatLink™3G Receivers Such as SN65LVDS308 Input Supports Video Interfaces up to 24-Bit
|
Original
|
PDF
|
SN65LVDS307
SLLS834
27-BIT
SN65LVDS308
24-Bit
810-Mbps
B0237
|
T0220
Abstract: D-PAK BUF654 DPAK TDI30 BUD630
Text: T em ic S e m i c o n d u c t o r s T02S2 DPAK T0251 DPAK T0220 Bipolar Power Transistors Maximum Ratings Part Number Plot at Tease W °c Electrical Characteristics k: VCES VCEG A V V tf at fis hpE k: A at Ic and Vce A ! v CEsat at Ic and hpE V V A i Package
|
OCR Scan
|
PDF
|
T0251
T02S2
T0220
BUD600
BUD616A
BUD620
BUD630
BUD636A
BUD700D
BUF620
T0220
D-PAK
BUF654
DPAK
TDI30
|
transistor Electronic ballast 13005
Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Text: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times
|
OCR Scan
|
PDF
|
TD13004
TD13005
TD13005
TD13004
TD13005Fast
transistor Electronic ballast 13005
transistor E 13005
SMD 13005 transistor
transistor d 13005
13005 ballast
13005 TO-252
transistor 13005 CIRCUIT
BR 13005
transistor 13005
|
AN-994
Abstract: IRFR210 IRFU210
Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling
|
OCR Scan
|
PDF
|
IRFR210
IRFR210)
IRFU210)
AN-994
IRFR210
IRFU210
|
1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
|
OCR Scan
|
PDF
|
IRFZ20
O-220
IRFZ22
IRFZ30
IRFZ32
5TO-220
IRL510
1rfz44
MFE9200
1rfz30
IRFZ12
1RFZ22
VN10LP
irfu9212
irfu9220
irfu9222
irfu9022
|
10M45s
Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
Text: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35
|
OCR Scan
|
PDF
|
O-251
10M45S
10M35
35M35
10M45s
IXCP10M45S
78L05 D-PAK
of 78l05
TL 78l05
78L05 TO-220
IXCP35M35
|
Untitled
Abstract: No abstract text available
Text: International ioR Rectifier IRLR024 IRLU024 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating Surface Mount IRLR024 Straight Lead (IRLU024) Available in Tape & Reel Logic-Level Gate Drive PD-9.625A 46S5452 DDlS'iSfl S7fl * I N R INTERNATIONAL R E C T IF IE R
|
OCR Scan
|
PDF
|
IRLR024
IRLU024
IRLR024)
IRLU024)
46S5452
150KQ
|
Untitled
Abstract: No abstract text available
Text: International i“R Rectifier 4Ö55452 00 15 7 4 2 34=ï • INR PD-9.637C IRFRC20 IRFUC20 HEXFET Power M O SFET • • • • • • • INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFRC20 Straight Lead (IRFUC20) Available in Tape & Reel
|
OCR Scan
|
PDF
|
IRFRC20
IRFUC20
IRFRC20)
IRFUC20)
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N -charm el P o w e r MOS F ield E ffect T ra n s is in m illim eters to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .
|
OCR Scan
|
PDF
|
2SK2275
2SK2275
IS/14
|
G3N60B
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
|
OCR Scan
|
PDF
|
HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
GTD3N60B3S,
HGT1S3N60B3S
HGTP3N60B3
115ns
1-800-4-HARRIS
G3N60B
|
Transistor SMD SM 942
Abstract: No abstract text available
Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30
|
OCR Scan
|
PDF
|
30N03
67040-S
144-A
-T0251-3-1
146-A
S35bQ5
Q133777
SQT-89
B535bQ5
Transistor SMD SM 942
|
|
|
Untitled
Abstract: No abstract text available
Text: Mil =X= mi SEME BUL65A LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE
|
OCR Scan
|
PDF
|
BUL65A
T0251)
|
T0252
Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)
|
OCR Scan
|
PDF
|
SMB60N03-10L
SMP60N03-10L
SMD30N03-30L
SMU30N03-30L
SUD30N03-30
SUD50N03-10
SUB75N05-06
SUP75N05-06
SUD45N05-20L
SMD25N05-45L
T0252
SUP75NO8-I0
SUP60N06-18
D-PAK
D2PAK
SMP40P06
T0263
70220AB
SMD10P05
T0-251
|
Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
|
OCR Scan
|
PDF
|
HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
|
Untitled
Abstract: No abstract text available
Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)
|
OCR Scan
|
PDF
|
Mfl55452
IRFR224
IRFU224
IRFR224)
IRFU224)
|
irfb220
Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Text: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111
|
OCR Scan
|
PDF
|
1HFPG50
O-247AC
T0-247AC
O-251AA
IRFR9222
O-243AA
IRFU010
irfb220
TO-251AA
251AA
251C
IRFR020
IRFR120
IRFR121
IRFR210
IRFR212
T0-251
|
1RFZ30
Abstract: 1rfz44 IRFZ12 IRFZ30 IRF145 1RFZ22 IRFZ32 IRFU020 1RFZ20 IRFU120
Text: - 266 - m tt € f ft A V Vd s £ Vg s Id le s s Pd Vg s t h le s s t T a = 2 5 cG ) I d (on) R o s (o n ) Vd :s = 14 & C is s g fs Coss C rss * /C H Vdg m in * /CH max b B * ty p (0 ) Vg s (V ) *ty p Id (A ) Vg s (V ) * ty p Id (A ) (* ty p ) (* ty p )
|
OCR Scan
|
PDF
|
IRFU020
T0-251AA
1RFU022
O-251AA
O-220
IRL510
IRL511
1RL520
1RFZ30
1rfz44
IRFZ12
IRFZ30
IRF145
1RFZ22
IRFZ32
1RFZ20
IRFU120
|
Untitled
Abstract: No abstract text available
Text: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling
|
OCR Scan
|
PDF
|
IRFR014)
IRFU014)
IRFR014
IRFU014
T0-251AA
VDS25
|
Untitled
Abstract: No abstract text available
Text: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes
|
OCR Scan
|
PDF
|
RURD610CC,
RURD615CC,
RURD620CC,
RURD610CCS,
RURD615CCS,
RURD620CCS
|
5962-8777601XX
Abstract: 5962-8778201XA IP78M12AH
Text: SEMELAB pic Type_No IP7815AIG-DESC IP7815AK IP7815AK-883B IP7815AK-BSS2 IP7815AK-DESC IP7815AR IP7815AR-883B IP7815AR-BSS2 IP7815AR-DESC IP7815ASM IP7815G IP7815G-883B IP7815G-BSS2 IP7815K IP7815K-883B IP7815K-BSS2 IP7815MT IP7815R IP7815R-883B IP7815R-BSS2
|
OCR Scan
|
PDF
|
IP7815AIG-DESC
IP7815AK
IP7815AK-883B
IP7815AK-BSS2
IP7815AK-DESC
IP7815AR
IP7815AR-883B
IP7815AR-BSS2
IP7815AR-DESC
IP7815ASM
5962-8777601XX
5962-8778201XA
IP78M12AH
|
Untitled
Abstract: No abstract text available
Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,
|
OCR Scan
|
PDF
|
RFD8P06LESM,
RFP8P06LE
0-300i2
1-800-4-HARRIS
|
