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    DPAK Search Results

    DPAK Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
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    DPAK Price and Stock

    Samtec Inc QSE-014-01-L-D-DP-A-K

    CONN DIFF ARRAY RCP 28P SMD GOLD
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    DigiKey QSE-014-01-L-D-DP-A-K Tray 929 96
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    Samtec Inc QTH-060-01-F-D-DP-A-K-TR

    CONN DIFF ARRAY PLUG 120POS SMD
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    DigiKey QTH-060-01-F-D-DP-A-K-TR Cut Tape 534 1
    • 1 $10.28
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    • 100 $7.49
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    QTH-060-01-F-D-DP-A-K-TR Reel 275 275
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    Sensopart 572-51064 - FT 50 RLHD-PAK4

    Diffuse laser sensor with backgr
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    DigiKey 572-51064 - FT 50 RLHD-PAK4 500 1
    • 1 $561
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    Samtec Inc QSH-020-01-H-D-DP-A-K-TR

    CONN DIFF ARRAY RCP 40P SMD GOLD
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    DigiKey QSH-020-01-H-D-DP-A-K-TR Reel 475 475
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    QSH-020-01-H-D-DP-A-K-TR Cut Tape 105 1
    • 1 $16
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    • 100 $11.0401
    • 1000 $11.0401
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    Samtec Inc QTE-014-01-H-D-DP-A-K-TR

    CONN DIFF ARRAY PLG 28P SMD GOLD
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    DigiKey QTE-014-01-H-D-DP-A-K-TR Cut Tape 401 1
    • 1 $12.14
    • 10 $11.22
    • 100 $7.84
    • 1000 $7.84
    • 10000 $7.84
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    DPAK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DPAK STMicroelectronics DPAK - ASD & DISCRETES - TOURS Original PDF

    DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


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    PDF TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET

    TSM2NB60

    Abstract: mosfet 600V 2A
    Text: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


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    PDF TSM2NB60 O-251 O-252 TSM2NB60CH 75pcs mosfet 600V 2A

    TSC5304EDCP

    Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
    Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


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    PDF TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251

    marking code C12

    Abstract: No abstract text available
    Text: TS1085 3A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description TS1085 are high performance positive voltage regulators are designed for use in applications requiring low


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    PDF TS1085 O-220 O-263 O-252 TS1085 marking code C12

    A12 diode

    Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
    Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This


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    PDF TSM3N90 O-220 ITO-220 O-251 O-252 TSM3N90 TSM3N90CH TSM3N90CP TSM3N90CZ O-251 A12 diode MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v

    TSM10N06

    Abstract: No abstract text available
    Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


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    PDF TSM10N06 O-252 TSM10N06CP TSM10N06

    7n52

    Abstract: 1525P
    Text: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3


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    PDF STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 O-220FP O-220 STB7N52K3 STF7N52K3 7n52 1525P

    Untitled

    Abstract: No abstract text available
    Text: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK, TO-252, TO-251 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 40 20 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 1691 169 100 130 C, 85 % RH


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    PDF O-252, O-251 M2003 08-May-12

    VND1NV04TR-E

    Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
    Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation


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    PDF VND1NV04 VNN1NV04 VNS1NV04 O-252 OT-223 VND1NV04, VNN1NV04, VNS1NV04 VND1NV04TR-E Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET

    A 673 C2 transistor

    Abstract: tip41 369D-01
    Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    PDF MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 AEC-Q101 MJD41C/D A 673 C2 transistor 369D-01

    SMD L4 Regulator SOT-223

    Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG
    Text: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on


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    PDF NCV4274, NCV4274A NCV4274 OT-223 NCV4274/D SMD L4 Regulator SOT-223 smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG

    T20P06LG

    Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
    Text: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant


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    PDF NTD20P06L, NTDV20P06L NTD20P06L/D T20P06LG P06LG T20 P06LG 20p06 marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg

    2N62K3

    Abstract: STD2N62K3 STP2N62K3
    Text: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3


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    PDF STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 O-220FP, O-220 STB2N62K3 STD2N62K3 STF2N62K3 2N62K3 STP2N62K3

    NJVMJD47T4G

    Abstract: No abstract text available
    Text: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


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    PDF MJD47, NJVMJD47T4G, MJD50 TIP47, TIP50 AEC-Q101 NJVMJD47T MJD47/D NJVMJD47T4G

    b01619

    Abstract: D6NM60N
    Text: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N


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    PDF STx6NM60N O-220, O-220FP, STB6NM60N STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N O-220 b01619 D6NM60N

    NJVMJD31CT4G

    Abstract: NJVMJD31T4G
    Text: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com


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    PDF MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31 NJVMJD31CT4G NJVMJD31T4G

    STP13NM60

    Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
    Text: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N


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    PDF STx13NM60N O-220FP, O-220, O-247 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N STP13NM60 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 MJ430

    L046

    Abstract: No abstract text available
    Text: LP8345 LP8345 Low Dropout, Low IQ, 500mA CMOS Linear Regulator Literature Number: SNVS229E October 19, 2011 LP8345 Low Dropout, Low IQ, 500mA CMOS Linear Regulator General Description Features The LP8345 low-dropout CMOS linear regulator are available in 5V, 3.3V, 2.5V, 1.8V or adjustable output versions. Packaged in our 6ld LLP package and 3ld DPAK they can deliver


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    PDF LP8345 LP8345 500mA SNVS229E L046

    g18n40

    Abstract: NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection
    Text: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    PDF NGD18N40CLB, NGD18N40ACLB NGD18N40CLB/D g18n40 NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection

    MJD350t4g

    Abstract: No abstract text available
    Text: MJD340, NJVMJD340T4G NPN , MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.


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    PDF MJD340, NJVMJD340T4G MJD350, NJVMJD350T4G MJE340 MJE350 AEC-Q101 MJD340/D MJD350t4g

    N3LG

    Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L NVD20N03L27 20n3 20N3LG
    Text: NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.


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    PDF NTD20N03L27, NVD20N03L27 NTD20N03L27/D N3LG SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L 20n3 20N3LG

    BYQ28

    Abstract: BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084
    Text: BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 TO-220AB and a SOT428 (DPAK) plastic package.


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    PDF BYQ28 O-220AB) OT428 BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084

    BYV25D

    Abstract: BYV25D-600
    Text: BYV25D-600 Rectifier diode, ultrafast Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description Ultrafast, epitaxial rectifier diode in a SOT428 DPAK surface-mountable plastic package. 1.2 Features • Fast switching ■ Soft recovery characteristic


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    PDF BYV25D-600 OT428 BYV25D-600 BYV25D

    l078b

    Abstract: marking l078b 4925 B transistor LP8340CDT-5.0 LP8340CLD-ADJ LP8340 LP8340C LP8340CLDX-ADJ LP8340I L082
    Text: LP8340 Low Dropout, Low IQ, 1.0A CMOS Linear Regulator General Description Features The LP8340 low-dropout CMOS linear regulator is available in 5V, 3.3V, 2.5V, 1.8V and adjustable output versions. Packaged in the 6ld LLP package and 3ld DPAK. The LP8340 can


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    PDF LP8340 LP8340 420mV 540mV 670mV 680mV 800mA l078b marking l078b 4925 B transistor LP8340CDT-5.0 LP8340CLD-ADJ LP8340C LP8340CLDX-ADJ LP8340I L082