T0258HF65G
Abstract: No abstract text available
Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
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T0258HF65G
T0258HF65G
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Falco Electronics
Abstract: T025A2 T025M2
Text: Power Inductors Shielded-SMT Toroidal 7 mm T025 Series POWER INDUCTORS Used in high frequency DC/DC converters in step-up or step-down. Magnetically shielded for low EMI radiation. Low core loss. Current handling up to 12 Amps. Energy storage limit of 25 µJ.
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T025A2
T025M2
T025L2
T025A2)
T025M2)
Falco Electronics
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SPD31N05
Abstract: No abstract text available
Text: SIEMENS SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS h RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 f ì P-T0252
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SPD31N05
SPU31N05
P-T0252
P-T0251
Q67040
S4121
Q67040-S411
30/Jan/1998
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NESY1085
Abstract: NSG2591 NSG259J
Text: NESY1085 LOW DROPOUT VOLTAGE REGULATORS IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage Hermetic TO-254Z Pak O utput C urrent 3.0A ABSOLUTE MAXIMUM RATINGS T0257AA PACKAGE O 3 TERM INAL POSITIVE ADJUSTABLE
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NESY1085
O-254Z
NESY1085.
NSG2591)
XM46-1158
NESY1085
NSG2591
NSG259J
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NESY9140
Abstract: NESYM9140 R3585
Text: NESY9140 NESYM9140 POWER MOSFET - P CHANNEL T0257AA PACKAGE • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability O ABSOLUTE MAXIMUM RATINGS TL = 25°C unless otherwise noted 1 PARAMETERS/TEST CONDITIONS
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NESY9140
NESYM9140
NESYM9I40
T0257AA
00A/nS,
XM46-1158
NESYM9140
R3585
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Untitled
Abstract: No abstract text available
Text: Back to FETs NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE MAXIMUM RATINGS T c = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS
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NESY140
NESYM140
T0257AA
NESYM140
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8S42*
15054AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0258AA
SM3S42*
T0258AA
FT0258AA
HDS100
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SM1U21PDT
Abstract: HDS010 T0257AA T0-257AA SM1U21
Text: SEMTECH CORP SflE D • SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE fl13 T 13 ^ DD03007 Olb SM1U21* SM1U41* SM1U51* SM1U61* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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DD03007
SM1U21*
SM1U41*
T0257AA
SM1U51*
SM1U61*
50V-600V
MIL-S-19500
SM1U21PDT
SM1U21
HDS010
T0-257AA
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d45116
Abstract: No abstract text available
Text: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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SM8U22*
SM8U42*
T0257AB
SM8U52*
SM8U62*
50V-600V
MIL-S-19500
SM8U22PDT
SM8U22
d45116
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PDF
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B57237S709M
Abstract: No abstract text available
Text: EPCOS NTC Thermistors Thermistor for inrush current limiting, e.g. in switch-mode power supplies 15 max 7 max i Coated disk Kinked leads X o £ Temperature range Rated temperature CN CN - 55 °C . + 170 °C + 25 °C i $ CM ro A i 00,8 TN T0257-7 Type Rr
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T0257-7
B57237-S479-M
B57237-S709-M
B57237-S100-M
S237/10
B57238-S259-M
B57237S709M
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T0252
Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)
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SMB60N03-10L
SMP60N03-10L
SMD30N03-30L
SMU30N03-30L
SUD30N03-30
SUD50N03-10
SUB75N05-06
SUP75N05-06
SUD45N05-20L
SMD25N05-45L
T0252
SUP75NO8-I0
SUP60N06-18
D-PAK
D2PAK
SMP40P06
T0263
70220AB
SMD10P05
T0-251
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JB35
Abstract: Dual Schottky Rectifiers
Text: SM3S42* DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryitia substrates ensures the lowest possible thermal impedance, thereby decreasing losses and providing increased efficiency. Typical applications include
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T0258AA
SM3S42*
MIL-S-19500
3S42PDT
SM3S42
JB35
Dual Schottky Rectifiers
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SP*02N60
Abstract: transistor smd hq
Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252
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SPD02N60
SPU02N60
P-T0251
Q67040-S4133
Q67040-S4127-A2
P-T0252
135ical
SP*02N60
transistor smd hq
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Untitled
Abstract: No abstract text available
Text: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,
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T0257AB
SM8U22*
SM8U42*
SM8U52*
SM8U62*
T0258AA
FT0258AA
HDS100
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PDF
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T0254AA
Abstract: T0257AA
Text: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,
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000301S
T0257AA
SM1S41
SM1S01
T0258AA
FT0258AA
HDS100
T0254AA
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PDF
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1061S
Abstract: L905
Text: SEMTECH C0RP 5fiE D • fllBTlBT ODDBT?! Eb2 ■ SET ADJUSTABLE POSITIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE SM1R41 A* This device is a three terminal adjustable positive voltage re g u la to r, requiring only two external resistors to set up the output voltage. Inherent in this device are all of the
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T0257AA
SM1R41
T0254AA
T0258AA
FT0258AA
HDS100
1061S
L905
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PDF
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NESY140
Abstract: NESYM140 L038
Text: NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE M AXIM UM RA TING S Tc = 25°C unless otherwise noted PA R A M ETER S/TEST CO NDITIO NS
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NESY140
NESYM140
NESYM140
T0257AA
L038
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PDF
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Untitled
Abstract: No abstract text available
Text: Back to Voltage Regulators NESY1085 LOW DROPOUT VOLTAGE REGULATORS IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage Hermetic TO-254Z Pak O utput C urrent 3.0A ABSOLUTE MAXIMUM RATINGS T0257AA PACKAGE O 3 TERM INAL
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NESY1085
T0257AA
O-254Z
NESY1085.
NSG2591)
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPD23N05 SPU23N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> *DS on Package Ordering Code SPD23N05 55 V 22 A 0.06 Q P-T0252
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SPD23N05
SPU23N05
P-T0252
P-T0251
Q67040
S4138
S4131
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PDF
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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PDF
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2950
Abstract: Q 400 BL4
Text: MOSFETS N CHANNEL POWER MOSFETS PACKAGE DEVICE TYPE BV q s s •d AMPS VOLTS T0258 r DS ON @ 0.5 !D OHMS Qg nc CISS pf Pd WATTS SNF41013 1000 9.0 1.3 90 2950 250 SNF41011 1000 12.0 1.1 122 4200 250 SNF40913 900 9.0 1.3 90 2950 250 SNF40911 900 12.0 1.1 123
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T0258
SNF41013
SNF41011
SNF40913
SNF40911
SNF40809
SNF40808
SNF40709
SNF40708
SNF406045
2950
Q 400 BL4
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PDF
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T02502
Abstract: No abstract text available
Text: FCI Semiconductor T02500 Series Preliminary Data Sheet 25.0 Amp PLASTIC SILICON RECTIFIERS Description T 0 2 5 0 0 Series Features O O O O O O LOW COSTS LOW LEAKAGE HIGH SURGE CAPABILITY HIGH TEMPERATURE CAPABILITY DIFFUSED JUNCTION MEETS UL SPECIFICTION 94V-0
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T02500
T0220
T02502
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P-T0252-3-1
Abstract: 3,3 v regulator smd
Text: SIEMENS Short Description TLE 4274 Features • Voltage regulator • Wide operating range • Wide temperature range • Short-circuit protection • Over temperature protection • Reverse polarity proof • 2.5 V, 3.3 V y \/ I ! P-SOT223 P-T0252-3-1 D-PAK
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P-SOT223
P-T0252-3-1
AEB021
P-T0252-3-1
3,3 v regulator smd
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