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    T0220B Price and Stock

    Hubbell Wiring Device-Kellems HBT0220BK

    Wb, tray, ovrhd,2"hx20"wx118"l, black, rnd |Hubbell Wiring Devices HBT0220BK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark HBT0220BK Bulk 1
    • 1 $262.08
    • 10 $243.36
    • 100 $216
    • 1000 $216
    • 10000 $216
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    Sager HBT0220BK 1
    • 1 $226.28
    • 10 $216.99
    • 100 $216.99
    • 1000 $216.99
    • 10000 $216.99
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    Hubbell Wiring Device-Kellems HBTT0220BK

    Wb, preform Radi T, 2"hx20"w, Black |Hubbell Wiring Devices HBTT0220BK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark HBTT0220BK Bulk 1
    • 1 $347.62
    • 10 $322.79
    • 100 $286.5
    • 1000 $286.5
    • 10000 $286.5
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    Sager HBTT0220BK 1
    • 1 $300.15
    • 10 $287.8
    • 100 $287.8
    • 1000 $287.8
    • 10000 $287.8
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    Hubbell Premise Wiring HBT0220BK

    WB, TRAY, OVRHD,2inchHx20inchWx118inchL, BLACK, RND | Hubbell Wiring Device-Kellems HBT0220BK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS HBT0220BK Bulk 18 Weeks 1
    • 1 $233.54
    • 10 $233.54
    • 100 $233.54
    • 1000 $233.54
    • 10000 $233.54
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    Hubbell Premise Wiring HBTT0220BK

    WB, PREFORM RADI T, 2inchHx20inchW, BLACK | Hubbell Wiring Device-Kellems HBTT0220BK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS HBTT0220BK Bulk 18 Weeks 1
    • 1 $309.77
    • 10 $309.77
    • 100 $309.77
    • 1000 $309.77
    • 10000 $309.77
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    Bimba Manufacturing Company T-0220-BK12

    Thruster, Linear Thruster (Ball Bearings) ; 9/16in Bore ; Stroke A: 20 in; Stro | Bimba T-0220-BK12
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS T-0220-BK12 Bulk 5 Weeks 1
    • 1 $1219.55
    • 10 $1219.55
    • 100 $1219.55
    • 1000 $1219.55
    • 10000 $1219.55
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    T0220B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,


    OCR Scan     		PDF T0-220B BD241 BD241A BD241B 8700E

    I670

    Abstract: No abstract text available
    Text: ¿»etír 5- H ì M L 2005 003138 jr 2 5 1091 o?- 5V - 200MA MONOLITHIC VOLTAGE REGULATOR v -¿va? VS*! H -i¡ FEATURES T ' * LOW INPUT VOLTAGE REQUIREMENT * LOW OUTPUT IMPEDANCE 1 . Input * OUTPUT SHORT CIRCUIT PROTECTION 2. Output 3. Ground * HIGH TEMPERATURE STABILITY


    OCR Scan     		PDF 200MA T0-220B ML2005C ML2005P ML2005P ML2005C 175pC 3-4S0181-« ML2005 I670

    2SA816

    Abstract: 2SC1626 2SC16
    Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED


    OCR Scan     		PDF 2SA816 2SC1626 0-50W T0-220B 80x69477 3-43018J-6 3f093J03 2SA816 2SC1626 2SC16

    BD 242 transistors

    Abstract: No abstract text available
    Text: BD 242 • BD 242 A • BD 242 B FNP SILICON EPITAXIAL BASE POWER TRANSISTORS "% ""m m ' w W . CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,


    OCR Scan     		PDF T0-220B BD242 BD242A BD242B Tc425Â ED242 0870E BD 242 transistors

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    FET BFW 43

    Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
    Text: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—


    OCR Scan     		PDF 0000b7D O-106 O-92F O-92A to-02 melf-002. melf-006 to-237 FET BFW 43 MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257

    BUZ10A

    Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
    Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B


    OCR Scan     		PDF D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23

    T0-220B

    Abstract: pj30 241B BD241 BD241A BD241B 241a
    Text: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO


    OCR Scan     		PDF U241B -241B T0-220B BD241 BD241A BD241B Tc425Â Junctio41 BD241B T0-220B pj30 241B BD241 241a

    TIP30 BCE

    Abstract: tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B HFE4015
    Text: TIP30 TIP30A IIHMUts I irou o CCMPLÎMENIAKÏ S I L I C E l’ITAXIAL-BASE POWEH THANSISTOIiS IN/IICRO ELECTRONICS CASE T0-220B THE TIP29 S E R IE S NPN AND T I P 30 S E R IE S (PN P) ARE COMPLEMENTARY SILICO N E P IT A X IA L BASE POWER TRANSISTORS DESIGNED EOR P0W£R A M P L IF IE R S AND


    OCR Scan     		PDF TIP30 TIP30A TIP29 TIP30 TIP29A IP29B TIP29C TIP30B TIP30C TIP30 BCE tip30c TIP29B HFE4015

    BD242B

    Abstract: 241B BD242 BD242A BOX69477 BD 242 transistors
    Text: BD 242 • BD 242 A ■ BD 242 B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS -Cf- *$ # 5 “ < V?.,. 4 & - 1 zj: ' 4 ! ì sf* 3 g, ’ " CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT


    OCR Scan     		PDF BD242B T0-220B BD242 BD242A bd242Ã 241B BOX69477 BD 242 transistors

    TIP30B

    Abstract: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30C tg425
    Text: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWEK TRANSISTORS ei— EOTRorsiiGS m ic r o CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND


    OCR Scan     		PDF TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C T0-220B tg425

    bd 241a transistor

    Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
    Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A


    OCR Scan     		PDF T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11

    45C8

    Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
    Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224

    TO220B

    Abstract: TO-220B 45V PNP 2A & 1.5A MH8501 2N3055 2N 6292 TO2208 MH8222 3055 3,5A METRIX+MX+220B
    Text: Power Tron/i/tor/ T0-220B T O -3 r M a x im u m R a tin g s E le c tric a l C h a ra c te r is tic s @ T c - 2 5 ° C T Y P E NO. NPN PN P PD lC BVc b O LVc e o LVc e R LV Ce v b v ebo •CEX h F E @ V CE @ lc m in . /m a x . @ T c = 2 5 °C V C E s a t @ t c / ' B


    OCR Scan     		PDF T0-220B O-220A O-220B O-2208 TG-220B TO220B TO-220B 45V PNP 2A & 1.5A MH8501 2N3055 2N 6292 TO2208 MH8222 3055 3,5A METRIX+MX+220B

    Untitled

    Abstract: No abstract text available
    Text: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS IN/IICRO ELECTRONICS CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ABE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED EOR POWER AMPLIFIERS AND


    OCR Scan     		PDF TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C T0-220B

    241A

    Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
    Text: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,


    OCR Scan     		PDF T0-220B Tc425Â BD241 BD241A BD241B -3-S93363, 241A 241B BD NPN transistors 312c

    2SD5703

    Abstract: 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125
    Text: T- SEMICONDUCTORS INC OTE S | 813tUS0 0 D M 2 6 2 4 | S3 -fi Power Transistors •c D E V IC E M ax v CEO M ax A v hF E M in /M a x ?f l ç P O L A R IT Y v C E (sa t M ax fti Iq »T M in p D (M ax) T C =25°C W A V A M Hi PACK­ AGE 2N3054 2N3055 2N3055SD


    OCR Scan     		PDF 813tUS0 O-48D 2SD5703 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


    OCR Scan     		PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135

    ISO220

    Abstract: MB39A132 ML2005 ML2005C ML2005P 38b3
    Text: öeffr- sSEP 2 5 0& M L 2005 003138 1991 £ Jjjsra 5V - 200MA MONOLITHIC VOLTAGE REGULATOR >1^1 rH r-vJ l c n . 1 = = | i .j: jj J f r ~ X: CyiSE TO-59 FEATURES TP0-220B ' * LOW INPUT VOLTAGE REQUIREMENT 1. Input 2. Output 3. Ground * LOW OUTPUT IMPEDANCE


    OCR Scan     		PDF 200MA T0-220B to-59 /p0-220B ML2005C ML2005P io-100mA io-200mA~ ML2005 ISO220 MB39A132 ML2005 ML2005C ML2005P 38b3