KS32C6200
Abstract: IEEE1284 parallel port interface 0.5um
Text: TECHNICAL SUMMARY KS32C6200 MICROPROCESSOR 1. OVERVIEW SAMSUNG’s KS32C6200 16/32-bit RISC microcontroller is designed to provide a cost-effective and high performance micro controller solution for general applications. To reduce total system cost, KS32C6200 also provides 2-ch UART, 2-ch DMA,
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KS32C6200
16/32-bit
ADDR19
ADDR18
ADDR17
ADDR16
IEEE1284
parallel port interface
0.5um
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2n5551 samsung
Abstract: transistor 2n5550 2N5550 2N5551
Text: SAMSUNG S E MI CON DU C T DR INC 2N5550 14E D | 7^4142 0007],fi? NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=140V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic
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0007ia?
2N5550
625mW
2N5551
T-29-21
100/iA,
100MHz
2n5551 samsung
transistor 2n5550
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KS6041
Abstract: sec 102 M SE x1y2
Text: SAMSUNG SE MI CON DUCTOR INC 02 • — ' " •— D E 7 T b 4142 0P057Sb 3 • ~0 5756 ' ' KS6041 ' - “- D T - ^ - 13 'û J CMOS DIGITAL INTEGRATED CIRCUIT SCIENTIFIC 10 DIGITS LCD CALCULATOR KS6041 is the CMOS LSI for 10 digits display and the complete single
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0P057Sb
KS6041
KS6041
c005055
sec 102 M SE x1y2
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filpflops
Abstract: No abstract text available
Text: SAMSUNG S E M I CON DU CT OR INC 02 KS54HCTLS " 7 0 A KS74HCTLS D E I T i b 4 IMS 000b315 D Dual J-K Negative-Edge-Triggered Flip-Flops with Clear - T - % > - 0 7 ~ o ~7 FEATURES DESCRIPTION • Function, pinout, speed and drive compatibility with 54/74LS logic famll/
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000b315
KS54HCTLS
KS74HCTLS
54/74LS
KS74HCTLS:
KS54HCTLS:
300-mil
7Tb414S
90-XO
14-Pin
filpflops
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I CON DU CT OR INC OE KS54HCTLS f ì i KS74HCTLS v 1 F e | T U M l M a 000 bE7L s | ~T-*f3-aj • Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with S4/74LS logic family
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KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: PRINTED IN KOREA C ircuit diagrams utilizing SAMSUNG products are included as a means of illustratin g typical sem iconductor applications; consequently, com plete inform ation su fficie n t for con stru ction purposes is not necessarily given The inform ation has been carefully checked and is believed
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2n5088 transistor
Abstract: 2N5088 2N6428A
Text: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D | 7^4142 □ 0 D 7 1 £i 3 fc, | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)
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1b4l42
G0071T3
2N6428A
625mW
2N5088
T-29-21
100/iA,
100mA,
100MHz
2n5088 transistor
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SOT-23 MARKING T31
Abstract: SOT23s KSR1111 KSR2111
Text: SAMSUNG SE MI CON DUC TO R INC KSR2111 IME 0 £ 71b4142 0007131 b J PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION T~2>n- 1 3 Blas Resistor Bullt In • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In trias Resistor (R=22Kß)
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71b4145
KSR2111
22Kll)
KSR1111
T-31-
OT-23
Collector23
100/iA,
--10V,
SOT-23 MARKING T31
SOT23s
KSR1111
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MPS2907A EQUIVALENT
Abstract: No abstract text available
Text: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPS2907A
T-29-21
PS2907
MPS2907A EQUIVALENT
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G2E 182
Abstract: No abstract text available
Text: \ SAMSUNG SEMICONDUCTOR INC OH O O D b D t .0 ; KS54ÀHCT 1 f í O KS74AHCT 4 ~ r:'4 s'~ o ~ 7 Look Ahead Carry Generator FEATURES DESCRIPTION • Compatible Carry Functions for direct ALU con nection • Cascadabie to perform look-ahead across n-blt adders.
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KS74AHCT
KS74AHCT:
KS54AHCT:
1256C
300-mll
7Tb414S
90-XO
14-Pin
G2E 182
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J303
Abstract: j711 KSR1201 KSR2201
Text: SAMSUNG S E M I CON DUG TOR 0 | IN Cl^ 3S*l| l ^ E KSR1201 00070b3 M | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In T O -9 2 S • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=4.7KO, R,=4.7Kil)
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KSR1201
KSR2201
O-92S
J303
j711
KSR2201
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1KS3
Abstract: TAPE RECORDER bias
Text: SAMSUNG SEMI CON DU CT OR INC 1 û ' DE | TTbMlMS Q0D43MM ñ -. ^ T -5 2 ^ 13 ^ 2 5 LINEAR INTEGRATED CIRCUIT KA2407 DC MOTOR SPEED CONTROLLER The KA2407 is a monolithic integrated circuit designed for DC motor speed controllers. ' FEATURES • High stable operation over a wide range of supply voltage;
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Q0D43MM
KA2407
KA2407
clti4145
1KS3
TAPE RECORDER bias
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MMBT5086
Abstract: MMBA812M6
Text: ¡SAMSUNG SE MI CON DUC TO R INC MMBA812M6 VTtMlia G00723S 7 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collecfor-Erfiitter Voltage Emitter-Base Voltage Collector Current
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MMBA812M6
OT-23
MMBT5086
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MC1488 SAMSUNG
Abstract: No abstract text available
Text: SAMSUNG _S EM I CONDUCTOR INC ñ&_ ' . ' D E § 7 U 4 1 4 E 0D04L.E3 1 | ~ ' ' T ^ - 7 5 H ¿5 ^ o S ‘ LINEAR INTEGRATED CIRCUIT MCI 488 QUAD LINE DRIVER The MC1488 is a monolithic quad line driver designed to Interface data terminal equipment with data communications equipment in con
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0D04L
MC1488
RS-232C.
MC1488N
MC1488D
RS232C
14DTL/TTL-TO-MOS
MC1488
MC1489
MC1488 SAMSUNG
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KA2211
Abstract: No abstract text available
Text: SAMSUNG S E M I C O N D U C T O R INC Ifl Î Ë| 7 clt.mM2 0 0 0 3 0 0 0 T KA2211 - ”7 4 - LINEAR INTEGRATED CIRCUIT 5.8W DUAL POWER AMPLIFIER The KA2211 is a dual .audio pow er a m p lifie r fo r con sum er a p p lic a tio n . It is designed fo r high power, low d is s ip a tio n and
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KA2211
KA2211
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KA3842D
Abstract: KA3842 KA3842N samsung flyback pin diagram KA3842 14 sop flyback samsung diagram flyback samsung samsung flyback diagram
Text: SAMSUNG E L E C T R O N I C S I NC 4SE D KA3842 • 7T b4 1M2 QGQTBOb 3 ■ S M 6 K LINEAR INTEGRATED CIRCUIT I . CURRENT MODE PWM CONTROLLER The KA3842 is fixed frequency current-mode PWM con troller. It Is specially designed for Off-Line and DC-toDC converter applications with minimal external com
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KA3842
KA3842
95VAC
130VAC
50Hz/60Hz)
40KHz
El-28
L1-15
100mV
KA3842D
KA3842N
samsung flyback pin diagram
KA3842 14 sop
flyback samsung diagram
flyback samsung
samsung flyback diagram
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KAD0808IN
Abstract: KAD0809IN D0809 D0808 ax asp hey ne cmos integrated circuits
Text: KAD0808/KAD0809 CMOS INTEGRATED CIRCUITS 8-BIT ^-COM PATIBLE A/D CONVERTERS WITH 8-CHANNEL MULTIPLEXER The KAD0808/KAD0809 A nalog -to D igital con verte r is a m o n o lith ic CMOS device w ith an 8-bit re solution , 8-channel in p u t m u ltip le x e r and
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KAD0808/KAD0809
KAD0808/KAD0809
KAD0808to
KAD0808IN
KAD0809IN
D0809
D0808
ax asp hey ne
cmos integrated circuits
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ie 10a
Abstract: KSC1394 c10A TRANSISTOR samsung tv
Text: SAMSUNG S EM I CON DUG TOR INC m E D | 7«,kqma QG Q ta a a;3 | KSC1394 NPN EPITAXIAL SILICON TRANSISTOR T-3 1-1 7 TV VHF TUNER MIXER • H igh Currant G ain Bandw idth Product fT =70 0M H z iyp • H igh Pow er G a ln G p e = 2 0 d B (Min) at f= 2 0 0 M H z
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KSC1394
700MHz
200MHz
T-31-17
Volta-180
ie 10a
c10A TRANSISTOR
samsung tv
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Untitled
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUIT KA2186 VIDEO SWITCHING CIRCUIT FOR TV T his integrated c irc u it provides all video s w itc h in g a l low ing con nection s between the peri TV plug and video se ctio n in the TV sets. FEATURE • • • • • 1 Video output 750-1 Vp.p no switched.
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KA2186
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cny 37
Abstract: cny 42
Text: S A M S U N G S E M I C O N D U C T O R INC QS I>F| 7 cim:i.4a ODObMlfl 0 J ” KS54HCTLS + Q Ò KS74HCTLS Look Ahead Carry Generator FEATURES DESCRIPTION • Compatible Carry Functions or direct ALU con nection • Cascadable to perform look-ahead across n-bit
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KS54HCTLS
KS74HCTLS
KS74AHCT:
KS54AHCT:
7Tb414S
14-Pin
cny 37
cny 42
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lm386
Abstract: LM386 SAMSUNG
Text: LINEAR INTEGRATED CIRCUIT LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER 8 DIP The LM386/S/D is a pow er a m p lifie r designed fo r use in low v o l tage con sum er ap plication s. The gain is inte rn a lly set to 20 to keep the external part c o u n t low , but the a d d itio n o f an external
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LM386
LM386/S/D
LM386
LM386 SAMSUNG
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Untitled
Abstract: No abstract text available
Text: KM41C1000D CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 1 bit Fast Page M ode C M O S D R A M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory ce lls within the sam e row. A ccess tim e -6, -7 o r -8 , p o w e r con su m p tio n (Norm al
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KM41C1000D
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i7 nehalem
Abstract: servidores mas potentes samsung ddr3
Text: Cuando nuestra memoria DDR3 te permite hacer más con menos, se revive la imaginación El placer de elegir bien Samsung Semiconductor Europe, 2008 La memoria DDR3 de Samsung está optimizada tanto para ofrecer un mejor rendimiento como para ahorrar energía. Ya esté instalada en
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D-65760
i7 nehalem
servidores mas potentes
samsung ddr3
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samsung DDR3 SDRAM 2GB
Abstract: i7 nehalem DDR3 DIMM Samsung ddr3 1600 SDRAM
Text: Memoria DDR3: da oggi potrai Fare più cose con meno energia. Samsung Semiconductor Europe, 2008 e l'Immaginazione spicca 11volo © Samsung Semiconductor Europe 2008 Memoria avanzata DDR3 Samsung per PC Il nuovo standard prestazionale nel campo delle memorie
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240pin
25GB/secondo.
D-65760
samsung DDR3 SDRAM 2GB
i7 nehalem
DDR3 DIMM
Samsung ddr3 1600 SDRAM
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