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    71B4145 Price and Stock

    TDK Corporation B41456B8479M000

    Aluminum Electrolytic Capacitors - Screw Terminal 63VDC 47000uF 20% Ring clip/clamp mnt
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    Mouser Electronics B41456B8479M000 355
    • 1 $50.81
    • 10 $46.06
    • 100 $44.09
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    TDK Corporation B41456B7479M

    Aluminum Electrolytic Capacitors - Screw Terminal 40VDC 47000uF 20% Ring clip/clamp mnt
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    Mouser Electronics B41456B7479M 345
    • 1 $27.81
    • 10 $25.62
    • 100 $22.69
    • 1000 $20.33
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    TDK Corporation B41456B9109M

    Aluminum Electrolytic Capacitors - Screw Terminal 100VDC 10000uF 20% Ring clip/clamp mnt
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    Mouser Electronics B41456B9109M 286
    • 1 $26.57
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    TDK Corporation B41458B7220M000

    Aluminum Electrolytic Capacitors - Screw Terminal 40VDC 220000uF 20% Threaded Stud Mount
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    Mouser Electronics B41458B7220M000 186
    • 1 $87.49
    • 10 $83.81
    • 100 $83.8
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    TDK Corporation B41456B4150M000

    Aluminum Electrolytic Capacitors - Screw Terminal 16VDC 150000uF 20% Ring clip/clamp mnt
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    Mouser Electronics B41456B4150M000 154
    • 1 $30.25
    • 10 $27.37
    • 100 $20.31
    • 1000 $20.31
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    71B4145 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEM ICOND UC TO R INC OS KS54HCTLS '"££Q C / ¿ Z O / i KS74HCTLS • DE | 71b4145 ODPbSSI b | ,J/ 6-Bit Shift Registers with Output Registers . FEATURES ^ 9 ^ DESCRIPTION • 8-Bit SerlaHn, ParalleK ut Shift Registers With Storage • Choice of 3-State ’59S) or Open-Drain (’596) Parallel


    OCR Scan     		PDF 71b4145 KS54HCTLS KS74HCTLS 54/74LS 7Tb414S 90-XO 14-Pin

    Untitled

    Abstract: No abstract text available
    Text: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.


    OCR Scan     		PDF KM736V689/L 64Kx36 64Kx36-Bit 100-TQFP-1420A 14ELECTRONICS 71b4145

    Untitled

    Abstract: No abstract text available
    Text: KMM366S824AT NEW JEDEC SDRAM MODULE KMM366S824AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S824AT KMM366S824AT 8Mx64 4Mx16, 400mil 168-pin

    ANA 6681

    Abstract: dot matrix 8*8 TOM -1588 tic 246 bd s639b ZZZB KS0070 ci 4303
    Text: KS0070 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER KS0070 is a do t m atrix LCD driver & c o n tro lle r LSI w hich is fabricated by low pow er CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 80 segment signal


    OCR Scan     		PDF KS0070 KS0070 KS0070-00; KS0070-00 D02D741 60-QFP-1414A 64-QFP-U20D ANA 6681 dot matrix 8*8 TOM -1588 tic 246 bd s639b ZZZB ci 4303

    D240C

    Abstract: No abstract text available
    Text: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		PDF KM29N16000T/R D240C

    RAS 1210 SUN HOLD

    Abstract: sun hold RAS 1220 sun hold ras 1210
    Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns


    OCR Scan     		PDF KM416V1204A/A-L/A-F KM416V1204A-6/A-L6/A-F6 110ns KM416V1204A-7/A-L7/A-F7 130ns KM416V1204A-8/A-L8/A-F8 150ns 42-LEAD 44-LEAD RAS 1210 SUN HOLD sun hold RAS 1220 sun hold ras 1210

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6

    Untitled

    Abstract: No abstract text available
    Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 6000B 16Mx1 KM41C16000BS 0G34Q05 71b4142 0034QGfc>

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC DB DE TUMIME KS54AHCT j f i f i KS74AHCT " " “ FEATURES Q0Dt.D35 5 J ~ _ 8-Bit Parallel-ln/Serial-Out Shift Registers with Cleat | ” “ * • Synchronous load • Direct .overriding clear • Parallel to serial Conversion • Function, pin-out, speed and drive compatibility with


    OCR Scan     		PDF KS54AHCT KS74AHCT 7Tb414S 14-Pin

    KS0076

    Abstract: fec 91 k 1507
    Text: KS0076 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER 80 Q FP The KS0076 is a d o t m atrix LCD drive r & c o n tro lle r LSI w hich is fab ricate d by low pow er CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller


    OCR Scan     		PDF KS0076 KS0076 KS0076-00 -1414A 71b4145 fec 91 k 1507

    wram samsung

    Abstract: 2W-25 OQ29
    Text: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking


    OCR Scan     		PDF KM423 2W259A -15ns -83MHz 120-Pin KM4232W259A KM4232W259A 0Q312CH wram samsung 2W-25 OQ29

    km29n16000at

    Abstract: c60h - dc
    Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass


    OCR Scan     		PDF KM29N16000AT/R 250us ib4142 km29n16000at c60h - dc

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MULTIMEDIA VIDEO K S 0116 GENLOCK DIGITIZER The KS01Î6 is a complete single chip genlock digitizer tor NTSC video input. Using SAMSUNG’S advanced CMOS technology thé KS0116 GENLOCK implements standard analog functions associated with the front end


    OCR Scan     		PDF KS0116 KS0116 71b4145

    Untitled

    Abstract: No abstract text available
    Text: KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.) KM6161002A-15:210 mA(Max.)


    OCR Scan     		PDF KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-17: KM6161002A-20 KM6161002AJ 44-SOJ-400 KM6161002AT 44-TSOP2-4Ã KM6161002A

    KM428C128

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter


    OCR Scan     		PDF 7Tb4142 KM428C128 100ns 125ns 150ns 180ns 40-PIN 40/44-PIN KM428C128

    KM4216C

    Abstract: No abstract text available
    Text: KM4232W259 CMOS WINDOW RAM FEATURES DESCRIPTION • 1M Byte Frame-Buffer on a single chip • 1.6 G-Byte/Second Internal Bus: - Fast W indow Drawing Operations - F ill at up to 1.6 G Byte/Second -A lig n e d BitBLT at up to 0 .6 4 G-Byte/Second • 8-Column B lock W rite w ith B it and Byte Masking


    OCR Scan     		PDF KM4232W259 KM4232W259 7Tb4142 KM4216C/V255/6/8 05MIN 0027fi2fl KM4216C

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • KM48C512/L/SL 7^4142 0D133bS 4b2 « S M Ö K CMOS DRAM 5 1 2 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 b it x 8 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM48C512/L/SL 0D133bS KM48C512/L/SL KM48C512/USL-7 130ns KM48C512/L/SL-8 150ns 100ns 180ns KM48C512/L/SL-10

    KS0066F00

    Abstract: No abstract text available
    Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The KS0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.


    OCR Scan     		PDF KS0066 KS0066 32kinds KS0066FQ0, 71b414E 60-QFP-UUA Q0220b7 98-STAB-35mm 120-STAB-35mm KS0066F00

    KM29N32000T

    Abstract: km29n32000
    Text: FLASH MEMORY KM29N32000T/R 4 M x 8 Bit N A N D Flash M em ory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x Sbit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    OCR Scan     		PDF KM29N32000T/R 250us KM29N32000T km29n32000

    DD-3754

    Abstract: No abstract text available
    Text: KM718V787 128Kx18 Synchronous SRAM 128Kx18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION •• Synchronous Operation. •• On-Chip Address Counter. Write Self-Timed Cycle. •• On-Chip Address and Control Registers. •• Single 3.3” 5% Power Supply.


    OCR Scan     		PDF KM718V787 128Kx18-Bit 100-Pin 128Kx18 KM718V787 00372S0 DD-3754

    timer circuit diagram

    Abstract: KS57C0208
    Text: KS57C0208 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C0208 single-chip CMOS microcontroller is for high performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, a watchdog timer, and sixteen n-channel open-drain I/O pins, the KS57C0208


    OCR Scan     		PDF KS57C0208 KS57C0208 24-pin 7Tb4142 71L4142 timer circuit diagram

    D37F

    Abstract: icx060ak sdfw0xxx KS7213 aggc VID-96-P002-R2 71b1112 fv2 042 28.6363MHZ
    Text: PRELIMINARY KS7213 CCD TIMING GENERATOR GENERAL DESCRIPTION 80-Q FP-1212 The KS7213 is a timing generator IC which generates the timing pulses necessary for color CCD image sensors. #i ORERING INFORMATION Device KS7213 FEATURES Package 80-QFP-1212 Operating Temperature


    OCR Scan     		PDF KS7213 KS7213 80-QFP-1212 VID-96-P002-R2 71b4142 D37F icx060ak sdfw0xxx aggc 71b1112 fv2 042 28.6363MHZ

    Untitled

    Abstract: No abstract text available
    Text: b?E » S A M S UN G E L E C T R O N I C S INC • 7^4142 0 0 1 5 5 1 1 T3fi CMOS DRAM KM44C266C 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC I cac tnc KM44C266C-6 60ns 15ns


    OCR Scan     		PDF KM44C266C KM44C266C-6 110ns KM44C266C-7 130ns KM44C266C-8 150ns 20-LEAD 001SS25

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMA TION KS0127 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER/SCALER The KS0127 converts analog NTSC, PAL or SECAM video in composite, S-video, or component format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YCbCr or RGB


    OCR Scan     		PDF KS0127 71b4142 0031b2b 100-QFP-1420C