Untitled
Abstract: No abstract text available
Text: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)
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TK13H90A1
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DKs smd marking
Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
Text: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1
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BCX42
OT-23
DKs smd marking
marking AF
BCX42
high voltage swiching transistors
marking AF SOT
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K25A10K
Abstract: TK25A10K TK25A10K3
Text: TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)
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TK25A10K3
K25A10K
TK25A10K
TK25A10K3
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Untitled
Abstract: No abstract text available
Text: Product specification 1PS76SB62 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Ultra high swiching speed +0.1 2.6-0.1 Very low capacitance High breakdown voltage 0.475 1.0max 0.375 +0.05 0.1-0.02 Guard ring protected Two pin very small plastic SMD package.
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1PS76SB62
OD-323
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FCA50CC50
Abstract: IG2U
Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA50CC50
E76102
FCA50CC50
trr100nsreverse
30max
31max
50sec-10sec
50msec-10sec
00A/s
IG2U
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transistor MJe13007
Abstract: mje13007 equivalent MJE13007 transistormje13007
Text: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current
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MJE13007
transistor MJe13007
mje13007 equivalent
MJE13007
transistormje13007
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mtm13127
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits • Overview Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC converter and other switching circuits.
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2002/95/EC)
MTM13127
MTM13127
MTM131270BBF
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5V SMPS charger circuit diagram
Abstract: 110V ac to 9V dc converter circuit 5V 2A SMPS circuit diagram charger 230 AC to 9V dc smps 230 AC to 5V dc smps smps 110v 1.6a 5v dc 500ma variable transformer 9V 1A smps PJM110 switching power transformator
Text: PJM110 High Voltage Power Switching Regulator T he M110CD/M110CZ high voltage power swiching output power up to 20W M110CZ with a variable AC input regulators use a breakthrough design to provide a low that ranges from 85V to 265V. cost, high efficiency off-line switcher solution for chargers,
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PJM110
M110CD/M110CZ
M110CZ)
M110CD)
O-220
220VAC
54BSC
5V SMPS charger circuit diagram
110V ac to 9V dc converter circuit
5V 2A SMPS circuit diagram charger
230 AC to 9V dc smps
230 AC to 5V dc smps
smps 110v 1.6a
5v dc 500ma variable transformer
9V 1A smps
switching power transformator
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FBA75CA45
Abstract: FBA75CA50
Text: MOSFET MODULE FBA75CA45/50 UL;E76102 （M） FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（ 2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for
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FBA75CA45/50
E76102
FBA75CA45/50
VDSS500V
31max
30max
FBA75CA50
50msec-10sec
50sec-50msec
FBA75CA45
FBA75CA50
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sod-323t
Abstract: No abstract text available
Text: SCS355T SurfaceMount Swiching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 0805 Features 0.086 2.2 0.071(1.8) Designed for mounting on smal l surface High speed 0.057(1.45) 0.041(1.05) High mounting capability,strong surge withstand,
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SCS355T
0805/SOD-323T
MIL-STD-750,
01-Jun-2002
sod-323t
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Untitled
Abstract: No abstract text available
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220F
Co000
QW-R219-001
100ms
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PJ13007 equivalent
Abstract: PJ13007 swiching transistor PJ13007CZ swiching pj13007
Text: PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25 ℃ Characteristic Symbol Rating Uint Collector Base Voltage
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PJ13007
O-220
PJ1300age
PW300
PJ13007 equivalent
PJ13007
swiching transistor
PJ13007CZ
swiching pj13007
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Untitled
Abstract: No abstract text available
Text: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)
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TK150F04K3
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Untitled
Abstract: No abstract text available
Text: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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TK100F04K3
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K4207
Abstract: No abstract text available
Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)
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2SK4207
K4207
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FAIRCHILD DIODE
Abstract: No abstract text available
Text: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the
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FDLL485B
LL-34
FAIRCHILD DIODE
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FBA75CA45
Abstract: FBA75CA50
Text: MOSFET MODULE FBA75CA45/50 UL;E76102 （M） FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（ 2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for
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FBA75CA45/50
E76102
FBA75CA45/50
VDSS500V
31max
30max
FBA75CA50
50msec-10sec
50sec-50msec
FBA75CA45
FBA75CA50
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Untitled
Abstract: No abstract text available
Text: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability
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FM220A
FM2100A
DO-214AC
MIL-STD-202E
09gram
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Untitled
Abstract: No abstract text available
Text: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability
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FM220
FM2100
DO-214AA
MIL-STD-202E
098gram
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Untitled
Abstract: No abstract text available
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 RC2000C-S Series Common Mode Reactor Single phase 2 lines/Length mounted type Application Noise suppression for Swiching power supply/Invreter Specifications RC2000C-SA Series Parts No. Rated Voltage[VAC] Rated Current[A] Inductance[mH typ] Resistance[m ohm max]
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RC2000C-S
RC2000C-SA
RC2003C-SA
RC2005C-SA
RC2010C-SA
RC2015C-SA
RC2000C-SB
RC2003C-SB
RC2005C-SB
RC2010C-SB
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2SA571
Abstract: 2SC97A swiching TC5A high frequency amplifier TO-205MD
Text: r 2SC97A 2SC97A ij ^ NPN V h 7 > v > T . ? / N P N SILICON EPITAXIAL TRANSISTOR High Speed Switching, High Frequency Amplifier H f l H f f l/ln d u s t r i a l Use £ ^/FEATURES •800mA < tV 'iT 'C O iS JS X 'i f- v Large current high speed swiching. •
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2SC97A
800mA
500mA)
2SA571
2SA571.
O-205MD
VCE-45V,
500mA
2SC97A
swiching
TC5A
high frequency amplifier
TO-205MD
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w241
Abstract: No abstract text available
Text: Ordering number : ENN6939 N-Channel Silicon MOSFET FW241 'SAMYO, Ultrahigh-Speed Swiching Applications Features Package Dimensions • T his c o m p o s ite device allow s high density m o u n tin g by unit : m m in corpo rating tw o M O S F E T chips in one p ackag e that
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ENN6939
FW241
FW241]
w241
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B1030
Abstract: high voltage swiching transistors swiching full KSC2752
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V
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KSC2752
300ns,
00bDb7M
B1030
high voltage swiching transistors
swiching full
KSC2752
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R1200F
Abstract: R1500F R1800F R2000F
Text: JGD R1200F THRU R2000F O HIGH VOLTAGE FSAT RECOVERY RECTIFIER VOLTAGE RANGE 1200 To 2000 Volts CURRENT 1.0 Ampere FEATURES DO-41 * Fast swiching * low leakage T * High current capability *-High reliability 1.0 2 5 .4 MIN * High surge capability .034(0 .9?
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R1200F
R2000F
DO-41
25VdC
NOTE31
R1500F
R1800F
R2000F
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