K25A10K
Abstract: TK25A10K TK25A10K3
Text: K25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)
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TK25A10K3
K25A10K
TK25A10K
TK25A10K3
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Untitled
Abstract: No abstract text available
Text: K25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)
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TK25A10K3
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K25A10K
Abstract: TK25A10K3 k25a10 TK25A10K
Text: K25A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K25A10K3 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 50 S (標準)
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TK25A10K3
SC-67
2-10U1B
K25A10K
TK25A10K3
k25a10
TK25A10K
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K25A10K
Abstract: No abstract text available
Text: K25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)
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Original
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PDF
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TK25A10K3
K25A10K
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K25A10K
Abstract: TK25A10K3
Text: K25A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K25A10K3 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 50 S (標準)
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Original
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PDF
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TK25A10K3
SC-67
2-10U1B
K25A10K
TK25A10K3
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