1658 NEC
Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
PDF
|
PX10020EJ08V0PF
1658 NEC
SW SPDT
FRS transceiver
SW-SPDT
upc8112tb
2SC5288
NE52418
RF basics
NE5510279A
discrete LNA D
|
mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
PDF
|
G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
|
UPC8236
Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4
|
Original
|
PDF
|
R09CA0001EJ0100
PX10020EJ42V0PF
UPC8236
2SC5508
2SC3357/NE85634
CATV MODULATOR
NE5510279A
upg2406t6r
Microwave GaAs FET catalogue
NE3515S02
NE662M04
NE3514S02
|
2SC5508
Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4
|
Original
|
PDF
|
R09CA0001EJ0300
2SC5508
UPC3243
UPC8236
NE3509
NE3517S03
transistor 20107
800 Mhz Cordless Phone circuit diagram
NESG270034
2SC4226 APPLICATION NOTES
NE5510279A
|
UPC8236
Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
PDF
|
G0706
PX10020EJ39V0PF
UPC8236
2SC5508
NE3512S02
digital tv tuner
hjfet
NESG240033
SW SPDT
NE5510279A
antenna for microwave CATV materials
ANTENNA parabolic
|
FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
PDF
|
R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
|
Untitled
Abstract: No abstract text available
Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,
|
Original
|
PDF
|
UPG168TB
HS350
|
SW SPDT 6pin
Abstract: UPG168TB-E4 VP215 HS350 UPG168TB
Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,
|
Original
|
PDF
|
UPG168TB
UPG168TB
HS350
SW SPDT 6pin
UPG168TB-E4
VP215
HS350
|
SW SPDT 6pin
Abstract: Marking G3A HS350 UPG2012TB UPG2012TB-E3 VP215 F MARKING 6PIN
Text: NEC's ¼W SINGLE CONTROL UPG2012TB L-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.
|
Original
|
PDF
|
UPG2012TB
UPG2012TB
HS350
SW SPDT 6pin
Marking G3A
HS350
UPG2012TB-E3
VP215
F MARKING 6PIN
|
SW SPDT 6pin
Abstract: HS350 UPG2012TB VP215 UPG2012TB-E3-A
Text: NEC's ¼W SINGLE CONTROL UPG2012TB L-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY voltage: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.
|
Original
|
PDF
|
UPG2012TB
UPG2012TB
HS350
SW SPDT 6pin
HS350
VP215
UPG2012TB-E3-A
|
SW SPDT 6pin
Abstract: UPG2012TK UPG2012TK-E2 VP215 HS350 Marking g3h MMIC s-band
Text: NEC's ¼ W SINGLE CONTROL UPG2012TK L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TK is a single control GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications.
|
Original
|
PDF
|
UPG2012TK
UPG2012TK
HS350
SW SPDT 6pin
UPG2012TK-E2
VP215
HS350
Marking g3h
MMIC s-band
|
SW SPDT 6pin
Abstract: HS350 UPG2012TK UPG2012TK-E2 VP215 F MARKING 6PIN
Text: NEC's ¼ W SINGLE CONTROL UPG2012TK L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2012TK is a single control GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications.
|
Original
|
PDF
|
UPG2012TK
UPG2012TK
HS350
SW SPDT 6pin
HS350
UPG2012TK-E2
VP215
F MARKING 6PIN
|
SW SPDT 6pin
Abstract: HS350 UPG168TB UPG168TB-E4 VP215 MARKING G2t
Text: DATA SHEET NEC's L, S-BAND SPDT SWITCH FEATURES DESCRIPTION NEC's UPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.)
|
Original
|
PDF
|
UPG168TB
UPG168TB
HS350
SW SPDT 6pin
HS350
UPG168TB-E4
VP215
MARKING G2t
|
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
|
|
2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
|
Original
|
PDF
|
2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
|
PG2009TB
Abstract: spdt mark s22
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
|
Original
|
PDF
|
PG2009TB
PG2009TB
PG10191EJ02V0DS
spdt mark s22
|
UPG2030TK
Abstract: SW SPDT 6pin UPG2030TK-A HS350 UPG2030TK-E2-A VP215
Text: DATA SHEET NEC's 1 W UPG2030TK ULTRA SMALL SPDT SWITCH FEATURES DESCRIPTION • NEC's UPG2030TK is a GaAs MMIC L, S-band SPDT Single Pole Double Throw switch for mobile phone and L, S-band applications. SWITCH CONTROL VOLTAGE: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)
|
Original
|
PDF
|
UPG2030TK
UPG2030TK
HS350
SW SPDT 6pin
UPG2030TK-A
HS350
UPG2030TK-E2-A
VP215
|
UPG158TB
Abstract: UPG158TB-E3 VP215 HS350
Text: NEC's ½W UPG158TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and
|
Original
|
PDF
|
UPG158TB
UPG158TB
HS350
UPG158TB-E3
VP215
HS350
|
Untitled
Abstract: No abstract text available
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
|
Original
|
PDF
|
UPG2009TB
IR260
VP215
WS260
HS350
|
marking g2u
Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
|
Original
|
PDF
|
UPG2009TB
UPG2009TB
HS350
marking g2u
SW SPDT 6pin
VP215
HS350
UPG2009TB-E3
California Eastern Laboratories gaas fet 4w
|
SW SPDT 6pin
Abstract: HS350 UPG2010TB VP215
Text: NEC's HIGH POWER SINGLE CONTROL UPG2010TB L-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2010TB is a single control GaAs MMIC L-band SPDT (Single Pole Double Throw) switch for mobile phone and L-band applications.
|
Original
|
PDF
|
UPG2010TB
UPG2010TB
HS350
SW SPDT 6pin
HS350
VP215
|
AX338
Abstract: MAX3967
Text: Quad, C om plem entary CMOS Sw itch A/l/PAlsVi UAX4515 iN1 _ T j 6 j IN2 01GE i l l 02 si [I y Can Be Used as a SPDT or SPST The MAX4613 CMOS analog sw itch h a s two norm ally closed (NC a n d two norm ally open (NO) sw itches. T his v ersatile device c a n be configured a s two
|
OCR Scan
|
PDF
|
MAX4613
MAX46
AX338
MAX3967
|
HS350
Abstract: No abstract text available
Text: DATA SHEET CEL GaAs INTEGRATED CIRCUIT «PG2030TK L, S-BAND SPDT SWITCH <R> DESCRIPTION T h e ^P G 2 0 3 0 T K is a G aA s M M IC L, S -ba nd S P D T S in g le Pole Double T hrow sw itch fo r m ob ile phone and o th e r L, S -ba nd applications. T h is de vice can o p era te w ith dual control volta ge s from 2.7 to 5.3 V, at fre q u e n cie s from 0.5 to 2.5 G Hz, with
|
OCR Scan
|
PDF
|
PG2030TK
PG2030TK
HS350
|
ic 4541
Abstract: N02 SOT23 CMOS 4541 4HC4066 74HC4066A X4610
Text: ^lO O Q , Quad SPST Switches in QSOP Improve the Industry Standard Guaranteed Operation from +2V to + 12V The new M A X4610/M A X4611/M A X4612 are low-voltage, quad, single-pole/single-throw SPST CMOS sw itches. The M A X4610’s sw itches are norm ally open (NO), the M A X4611’s sw itches are
|
OCR Scan
|
PDF
|
X4610/M
X4611/M
X4612
X4610
X4611
MAX4612
AX461!
X4542)
MAX4543)
ic 4541
N02 SOT23
CMOS 4541
4HC4066
74HC4066A
|