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    SUS 433 Search Results

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    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


    Original     		PDF 2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


    Original     		PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    MJE34 equivalent

    Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881


    Original     		PDF 2N5879, 2N5881 2N5880, 2N5882 2N5879 2N5880* 2N5882* TIP73B TIP74 MJE34 equivalent BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


    Original     		PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714

    Untitled

    Abstract: No abstract text available
    Text: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)


    Original     		PDF PMD16K80 PMD17K80 100mA;

    UZF4115

    Abstract: UZF411 A6061-T6 uzfxmr1 UZFXMR2 COPPER C3604 UZFTNB8 UZFTP8 M1021 UZFRV41
    Text: UZF41/42/43 series 0.6.10 13:16 Page 1 NEW OPTICAL FIBER DIGITAL/AUTO/MANUAL SETTING TYPE PHOTOELECTRIC SENSORS UZF41/42/43 Series SIMPLE OPERATION WITH INNOVATIVE JOG SWITCH SETTING AND MANUAL SETTING TYPE Simple Operation UZF41/42 series Uses an innovative highly operable jog


    Original     		PDF UZF41/42/43 UZF41/42/43 UZF41/42 UZF42 UZF42 UZF43 12-turn UZF4115 UZF411 A6061-T6 uzfxmr1 UZFXMR2 COPPER C3604 UZFTNB8 UZFTP8 M1021 UZFRV41

    dot matrix printer circuit diagram datasheet

    Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
    Text: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as


    Original     		PDF HA13408 ADE-207-206 HA13408 dot matrix printer circuit diagram datasheet dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder

    4332 transistors

    Abstract: D16430
    Text: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed PACKAGE DRAWINGS Unit: mm 1.5 −0.1 +0.2 for high-speed switching and features a very low collector-to-emitter


    Original     		PDF 2SC4332, 4332-Z 2SC4332 2SC4332-Z 4332 transistors D16430

    CS 213 Polymer protection

    Abstract: CS 213 Polymer 39-29-3046 MAX6590 MAX1544 irf 343 so-8 Multimeter tektronix dmm 157 IRF 548 C71-C78 100w amp sanyo
    Text: MAXIM 19-2870; Rev 0; 04/03 MAX1544/MAX1545 MAX1544/MAX1545 Evaluation Kits Pentium is a registered trademark of Intel Corp. Hammer is a trademark of Advanced Micro Devices, Inc. QuickPWM is a trademark of Maxim Integrated Products, Inc. Features


    Original     		PDF MAX1544/MAX1545 MAX1544/MAX1545 MAX1980 CS 213 Polymer protection CS 213 Polymer 39-29-3046 MAX6590 MAX1544 irf 343 so-8 Multimeter tektronix dmm 157 IRF 548 C71-C78 100w amp sanyo

    QFS25U

    Abstract: 300-500VDC QAS60-50 Airpax relay QAS60 SAR-F-1 QAS60-75 QAS25-50 arc welder inverter 0116 solar
    Text: Other Products SAR & SAS Circuit Protectors 280 QAS, QAL, QFS, QFL Quick-Action Fuses 282 HVS & SARPV Compact Switches for 284 Solar Power Applications SAR & SAS Circuit Protectors Applications: Typical applications include tight spaces in radio signal amplifiers for base transceiver stations, uninterruptible power supplies,


    Original     		PDF DC24V 24VDC SARPV-F-40 QFS25U 300-500VDC QAS60-50 Airpax relay QAS60 SAR-F-1 QAS60-75 QAS25-50 arc welder inverter 0116 solar

    HKW0820

    Abstract: rotary encoder sharp 73 HSW2032-510069 HKW0731-010010 HSW2022-010029 HSW2023-010029 HSW4512-310011 Slide Switch 2p3t HSW2022 hosiden
    Text: SWI05 Switches Contents Contents . 1 Slide Switches Notice . 2 Product Lineup . 3


    Original     		PDF SWI05 HKW0820 rotary encoder sharp 73 HSW2032-510069 HKW0731-010010 HSW2022-010029 HSW2023-010029 HSW4512-310011 Slide Switch 2p3t HSW2022 hosiden

    NTE2584

    Abstract: npn 10a 800v
    Text: NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		PDF NTE2584 NTE2584 npn 10a 800v

    Untitled

    Abstract: No abstract text available
    Text: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to


    OCR Scan     		PDF IBM2520L8767 102Mb/s. 400Mb/s chapt07

    Untitled

    Abstract: No abstract text available
    Text: IBM2520L8767 IBM Processor for ATM Resources Features pendent: one can use SRAM devices while the other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications.


    OCR Scan     		PDF IBM2520L8767 102Mb/s. 400Mb/s chapt07

    2n3054

    Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
    Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include


    OCR Scan     		PDF edi358 TA7557 TA7611 TA7612 TA7639 TA7640 TA7719 TA7739 TA7740 TA7741 2n3054 RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147

    TA8724

    Abstract: 2N6247 RCA-2N6246 2N6246 2N6248 clare mercury RCA 2N6246 RC 4565 TA7279 TA7280
    Text: G E SOLID 3875081 D Ìf| 3 0 7 S 0 Ô1 DÏ STATE G Ë SOL I D ST ATE " _ 01E 17427 DD17 4 5 7 D 7< General-Purpose Power Transistors File N u m b é r 677 2N6246, 2N6247, 2N6248, 2N6469 TERMINAL DESIGNATIONS


    OCR Scan     		PDF 307S0Ã 0D174E7 2N6246, 2N6247, 2N6248, 2N6469 RCA-2N6246, 2N6469 TA8724 2N6247 RCA-2N6246 2N6246 2N6248 clare mercury RCA 2N6246 RC 4565 TA7279 TA7280

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671

    2sc431

    Abstract: 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC MF6 •, Jü": M.a DQ Type No. No. VCBO VCEO V ebo [V ] [V ] 150 100 2SC 407 408 409 200 T7M 41OA 300 412 2SC431 ISO 432 433 T13M 200 434A 300 436 450 360 1467 T 3 M 40 500 400 1468 T10M 36 450 360 T10M 40 500 1469A T30M 36


    OCR Scan     		PDF 2n307 2SC407 2SC2126A T3M20 T10M20 T30M20 2SC3703 T30R20 02QHAX 2-04M 2sc431 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


    OCR Scan     		PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


    OCR Scan     		PDF

    ked2

    Abstract: No abstract text available
    Text: POIilEREX INC m M U iE K 31E J> • TE^MbSl b W M PRX DGQM3bb KED235A1 - Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 .


    OCR Scan     		PDF KED235A1 BP107, Amperes/500 ked2

    IR 436

    Abstract: bf 434 amplificateur FT 434 512-BD deflexion vertical tv deflexion BD436
    Text: BD 434 BD 436 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P ITAXIES Compì, of BD 433, 435 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


    OCR Scan     		PDF