Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE A M PLI FIE R APPLICATIONS. U n i t i n mm +0.5 2 .5 -0 .3 . L o w N o i s e F i g u r e , H i g h Gai n . . N F = 1 . ldB, I S 2 1 e |2= 1 3 d B f=lGHz MAX IMU M RATINGS (Ta=25°C) CHARACTERISTIC

C4314

Abstract: 9T TRANSISTOR
Contextual Info: A 7 - Swit-h.ni> Puwc' Tr,n-si->liii 15a H D T series O u tlin e D im e n s io n s 2SC4314 T15W80HDT (NPN) A b s o lu te Maximum R a tin g s 1! m sii Item a U 7 7 • ^ -7 .M I± Collector to Base Voltage flJEE C ollector to Em itter Voltage E m itter to Base Voltage

2sc431

Abstract: 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40
Contextual Info: POWER TRANSISTORS SHINDENGEN ELECTRIC MF6 •, Jü": M.a DQ Type No. No. VCBO VCEO V ebo [V ] [V ] 150 100 2SC 407 408 409 200 T7M 41OA 300 412 2SC431 ISO 432 433 T13M 200 434A 300 436 450 360 1467 T 3 M 40 500 400 1468 T10M 36 450 360 T10M 40 500 1469A T30M 36

2SC4315

Contextual Info: 2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 14dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SC4317

Abstract: transistor c 3856
Contextual Info: 2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

ic ma 8910

Abstract: 2SC4319
Contextual Info: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

VHF-UHF Band Low Noise Amplifier

Abstract: marking lob
Contextual Info: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

Contextual Info: T O SH IB A 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 • Low Noise Figure, High Gain. . N F = l.ld B , |S21e|2= 13dB f = 1GHz +0.25 1.5-0.15. HO ÖÖ

LM 3177

Abstract: 2SC4316 2SC 641
Contextual Info: 2SC4316 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MICROWAVE CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency Insertion Gain Noise Figure SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

2SC4311

Contextual Info: • J4 v ¥ > 9 iV 7 Switching Power Transistor HDT series Outline Dimensions 6a 2SC4311 NPN (TP6V80HDT) Case : ITO -220 4.6*9-» 2.7*02 0.7±ti U n it • m m Absolute Maximum Ratings m Item te g n * Symbol Storage Temperature Junction Temperature 3 U 9 9 • '■<—X'ftEE

2SC4317

Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 - 0 . 3 • Low Noise Figure, High Gain. . NF = l.ld B , |S2le |2= 13dB f = 1GHz + 0 .2 5 1 .5 -0 .1 5 , HO

VQE12

Contextual Info: TOSHIBA 2SC4315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4315 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 -0 .3 -fr • Low Noise Figure, High Gain • N F = l.ld B , |S 2 ie l 2 = 14dB f=lG H z M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: H D T series Switching Power Transistor MWIfc'Ü&M 6a 2SC4310 NPN (T6V80HDT) Outline Dimensions Absolute Maximum Ratings ie g m Item fSliFiS. Storage Tem perature Junction Tem perature 3 1 /7 J • ^ —X Collector to B a se Voltage -3 V ? •i 9 5 7 J ®EE

2SC4314

Contextual Info: Switching Power Transistor 15a H D T series Outline Dimensions 2SC4314 Case : MT0-3P CT15W80HDT NPN) 5.0±o.j 2.2±o.5 ^3 .3 ^ 2.0*03 2.4 ±M Q.65±°-g Unit • mm • > Ê & # ^ 5 Ë tè m Absolute Maximum Ratings Item § I E Storage Temperature Junction Temperature

C4318

Abstract: trf 740 s22b 2SC4318 mur 1250 mur S22B
Contextual Info: I ' J j i l l O M . SEM ICO N D U CTO R T O SH IB A TECHNICAL i l i O K 2SC4318 SILICON NPN EPITAXIAL PLANAR TYPE DATA 25C4318 U n it in nun V H F-U H f BAND LOW NOISE AMPUFIER APPLICATIONS. «*6 MAX. 1.6 M A X . •a4±aos. > Low Noise Figure, High Gain.

Contextual Info: High Voltage - High Speed Switching Transistors H D T s e rie s IT 0 -2 2 0 TO -220 Bipolar transistors NPN Type No. EtAJ Absolute Maximum Ratings Electrical Characteristics PT • Tstg VCBO V ceo V ebo !c Ib [V ] [V ] [V ] [A ] [A ] tw ] 6 3 50 T) 2SC4310

transistor C5D

Abstract: 2SC4315
Contextual Info: 2SC4315 TOSHIBA 2SC4315 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS. • . +0.2 Low Noise Figure, High Gain. NF = l.ldB, |S2le|2= 14dB f = 1GHz 2 .9 - a 3 II -€3 M A X IM U M RATINGS (Ta = 25°C)

2SB206

Abstract: 2SB205 2SB212 2SC1466 2sd206 2SB214 GERMANIUM TRANSISTOR 2SB208 transistor SE 431 2SD208
Contextual Info: C A T .N o .E 309 2SC431 th ru 2SC436 Use • For high-frequency power amplification • For high-frequency power switching Construction • NPN triple diffusion type SHINDENGEN’S silicon power transistors are all outside comparison in perfor­ mance and really epoch-making to realize that even one piece o f element is

2SC4315

Contextual Info: 2SC4315 TOSHIBA 2SC4315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • Low Noise Figure, High Gain N F = l.ldB , |S2 ie l2 = 14dB f=lGHz -fr M A X IM U M RATINGS (Ta = 25°C)

2sc4311

Abstract: JY transistor TP6V80HDT
Contextual Info: r lL J I Swit<;hmg Pownr T ransistor O C I IC o O u tlin e D im ensions 6 2SC4311 a TP6V80H DT (NPN) ^ A bso lu te Maximum R atin g s h m ft £ C onditions Symbol Item flf) a 1/ 9 9 • ■n V 9 9 ■ x ; y y Ml± C ollecto r to E m itte r Voltage x. 3 -7 9 ■s<—

2SC4318

Contextual Info: TOSHIBA 2SC4318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 1.6 MAX. 4.6 MAX. • . Low Noise Figure, High Gain. Q4±a05 1.7 MAX. g N F = l.ld B , |S2 ie l2 —lldB f= 1GHz l - MAXIMUM RATINGS (Ta = 25°C)

287-1 MAG

Abstract: 2SC4317 BT 1201 ic
Contextual Info: 2SC4317 TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.5 2 .5 -0 .3 + 0.25 Low Noise Figure, High Gain N F = l.ld B , |S2lel2= 13dB f=lGHz k1-5-°-15>i I- MAXIMUM RATINGS (Ta = 25°C)

sem 2106

Abstract: TRANSISTOR 3856
Contextual Info: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25

transistor j50

Contextual Info: 2SC4315 TOSHIBA TOSHIBA TRANSISTOR n SILICON NPN EPITAXIAL PLANAR TYPE f w êf d i mm 1 • 5 v Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S2lel2= 14dB f=lGHz M A X IM U M RATINGS (Ta = 25°C)