Supersot 6
Abstract: Supersot6 electrical
Text: Discrete Temperature range Software version Revision date 2N3903 TO-92-3 Electrical 25°C N/A N/A FMB100 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMB5551 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMBA06 SuperSOT-6 Electrical N/A 5 Mar 13, 2002 FMBA14
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2N3903
FMB100
FMB5551
FMBA06
FMBA14
FMBA56
MMBT100
MMBT2369
MMBT2369A
MMBT3640
Supersot 6
Supersot6
electrical
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transistor Y4
Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
marking 004
Supersot 6
complementary npn-pnp
marking Y4
150MA80
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FMBA0656
Abstract: transistor marking E2 Supersot 6 transistor marking c1
Text: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.
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FMBA0656
300mA.
fmba0656
lwpPr33
transistor marking E2
Supersot 6
transistor marking c1
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marking Y1 transistor
Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring
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FMB2227A
300mA.
150mA,
300mA,
150mA
300mA
100kHz
100MHz
lwpPr19
marking Y1 transistor
transistor marking y1
y1 transistor
Supersot 6
transistor y1
Supersot6
PR63
y1 npn
FMB2227A
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marking Y1 transistor
Abstract: fairchild pin 1 marking
Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring
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FMB2227A
300mA.
marking Y1 transistor
fairchild pin 1 marking
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transistor Y2
Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
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FMB3946
100mA
100MHz
100MHz
100uA,
fmb3946
lwpPr23
transistor Y2
Y2 TRANSISTOR
Supersot6
transistor marking y2
marking 002
complementary npn-pnp
Supersot 6
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33206
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33206 ACCEPTS THESE DEVICES SOT-26, SOT-457 SC-59-6, SC-74-R TSOT-23-6, TSOP-6 B ANALOG RJ-6, UJ-6 FAIRCHILD SuperSot-6 I.R. Micro-6 * LINEAR S6 PKG.
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OT-26,
OT-457
SC-59-6,
SC-74-R
TSOT-23-6,
33206
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FMBM5401
Abstract: No abstract text available
Text: FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter
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FMBM5401
FMBM5401
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Untitled
Abstract: No abstract text available
Text: FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter
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FMBM5401
FMBM5401
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FMBM5551
Abstract: MMBT5551
Text: FMBM5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package Features • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings *
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FMBM5551
MMBT5551
FMBM5551
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FMB5551
Abstract: MMBT5551
Text: FMB5551 FMB5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package C2 E1 C1 • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. • See MMBT5551 for characteristics.
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FMB5551
MMBT5551
FMB5551
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Untitled
Abstract: No abstract text available
Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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FMBS2383
120MHz
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sot23-6 package marking d619
Abstract: marking D619 d619 zxtd09n50de6ta
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
ZXTD09N50DE6TA
ZXTD09N50DE6TC
OT23-6
OT23-6
sot23-6 package marking d619
marking D619
d619
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FMB5551
Abstract: MMBT5551 1MA160
Text: FMB5551 FMB5551 C2 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package E1 C1 • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. • See MMBT5551 for characteristics.
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FMB5551
MMBT5551
FMB5551
1MA160
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d619
Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
OT23-6
OT23-6
ZXTD09N50DE6TA
ZXTD09N50D:
d619
sot23-6 package marking d619
transistor d619 data
ZXTD09N50DE6
ZXTD09N50DE6TA
ZXTD09N50DE6TC
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transistor Y2
Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
Text: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
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FMB3946
100mA
100MHz
100MHz
10OuA,
fmb3946
lwpPr23
transistor Y2
Y2 TRANSISTOR
marking 002
marking Y2 transistor
transistor marking y2
marking A1 TRANSISTOR
complementary npn-pnp power transistors
Supersot 6
Supersot6
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supersot 6 TE
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige
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FMBA0656
300mA.
supersot 6 TE
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at
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FMB1020
300mA.
10OuA
100mA
150mA
200mA,
100MHz
10OuA,
fmb1020
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
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FMB3946
100mA
100MHz
100MHz
10OuA,
fmb3946
lwpPr23
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D marking PNP
Abstract: MARKING IC RP 6 PR63
Text: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
150mA,
300mA,
100kHz
100MHz
D marking PNP
MARKING IC RP 6
PR63
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transistor Y4
Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
complementary npn-pnp power transistors
marking A1 TRANSISTOR
marking 004
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marking Y1 transistor
Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Text: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
300mA
150mA,
300mA,
100kHz
100MHz
marking Y1 transistor
y1 transistor
complementary npn-pnp power transistors
y1 npn
transistor marking y1
FMB2227A
Supersot 6
transistor y1
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FB222
Abstract: SOIC1
Text: éùxim jéM w . « $ * # Discrete POW ER & Signal _ _ Technologies i ùiOiài FMB2222A / FMB2222A FFB2222A FFB2222A man:- m k. MMPQ2222A E2 C1 / MMPQ2222A C2 B1 pin#1 E1 pin#1 B1 SC70-6 SuperSOT -6 M a rk : .1P M a rk : .1P SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier
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FFB2222A
FMB2222A
MMPQ2222A
SC70-6
SOIC-16
FB222
SOIC1
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Untitled
Abstract: No abstract text available
Text: RFMiHran-! .fTTOR FMBA56 pin#1 B1 SuperSOT -6 Mark: ,2G PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum RdtiflQS TA = 25°Cunlessotherwisenoted
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FMBA56
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