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    Vishay Siliconix SUP65P04-15-E3

    MOSFET P-CH 40V 65A TO220AB
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    SUP65 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP65P04-15 Vishay Siliconix MOSFETs Original PDF
    SUP65P04-15-E3 Vishay Transistor Mosfet P-CH 40V 65A 3TO-220AB Original PDF
    SUP65P04-15-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 65A TO220AB Original PDF
    SUP65P06-20 Temic Semiconductors P-Channel Enhancement-Mode Transistors Original PDF
    SUP65P06-20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUP65P06-20 Vishay Intertechnology P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUP65P06-20-E3 Vishay Transistor Mosfet P-CH 60V 65A 3TO-220AB Original PDF
    SUP65P06-20 SPICE Device Model Vishay P-Channel 60x-V (D-S), 175°C MOSFET Original PDF

    SUP65 Datasheets Context Search

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    sup65p06

    Abstract: No abstract text available
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) S-57253--Rev. 24-Feb-98 sup65p06

    sup65p06

    Abstract: 0244 9117 AN609 SUP65P06-20
    Text: SUP65P06-20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP65P06-20 AN609 03-Jan-08 sup65p06 0244 9117

    SUB65P06-20

    Abstract: SUP65P06-20
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-263 O-220AB O-263) SUB65P06-20 SUP65P06-20

    AN609

    Abstract: SUP65P04-15 352-600
    Text: SUP65P04-15_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP65P04-15 AN609 03-Jan-08 352-600

    sup65p06

    Abstract: SUB65P06-20 SUP65P06-20
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) 18-Jul-08 sup65p06 SUB65P06-20 SUP65P06-20

    sub65p06-20

    Abstract: SUB65P06 SUP65P06
    Text: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB65P06-20 O220AB SUB65P0620 SUP65P0620 O-220AB O-263) O-263 P-39628--Rev. 28-Dec-94 sub65p06-20 SUB65P06 SUP65P06

    SUB65P06-20

    Abstract: SUP65P06-20
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) 08-Apr-05 SUB65P06-20 SUP65P06-20

    S0511

    Abstract: sup65p06 SUB65P06-20 SUP65P06-20 sub65p06
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) S-05111--Rev. 10-Dec-01 S0511 sup65p06 SUB65P06-20 SUP65P06-20 sub65p06

    SUB65P06

    Abstract: SUP65P06
    Text: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB65P06-20 O220AB SUB65P0620 SUP65P0620 O-220AB O-263) O-263 P-39628--Rev. 28-Dec-94 SUB65P06 SUP65P06

    SUB65P06-20

    Abstract: No abstract text available
    Text: SUP/SUB65P06-20 Siliconix P-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TOĆ220AB S TOĆ263 G DRAIN connected to TAB GD S G D S Top View Top View D PĆChannel MOSFET SUB65P06Ć20 SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB65P06-20 O220AB SUP65P0620 SUB65P0620 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98 SUB65P06-20

    TO263

    Abstract: SUB65P04-15 SUP65P04-15
    Text: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15


    Original     		PDF SUP/SUB65P04-15 O-220AB O-263 SUB65P04-15 SUP65P04-15 18-Jul-08 TO263 SUB65P04-15 SUP65P04-15

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S


    Original     		PDF SUP/SUB65P04-15 2002/95/EC O-263 SUB65P04-15 SUP65P04-15 SUP65P04-15-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S


    Original     		PDF SUP/SUB65P04-15 2002/95/EC O-263 SUB65P04-15 SUP65P04-15 SUP65P04-15-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SUB65P06

    Abstract: SUP65P06
    Text: SUP/SUB65P06Ć20 Siliconix PĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) -60 0.020 -65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET


    Original     		PDF SUP/SUB65P0620 O220AB SUB65P0620 SUP65P0620 O220AB P39628Rev. SUB65P06 SUP65P06

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S


    Original     		PDF SUP/SUB65P04-15 2002/95/EC O-263 SUP65P04-15 SUB65P04-15 SUP65P04-15-E3 11-Mar-11

    sum45n25

    Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
    Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)


    Original     		PDF VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    SUB65P04-15

    Abstract: SUP65P04-15
    Text: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15


    Original     		PDF SUP/SUB65P04-15 O-220AB O-263 SUB65P04-15 SUP65P04-15 S-00831--Rev. 01-May-00 SUB65P04-15 SUP65P04-15

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20


    OCR Scan     		PDF SUP/SUB65P06-20 T0-220AB O-263 SUP65P06-20 SUB65P06-20 T0-220AB O-263) O-263 P-39628--Rev. 28-Dec-94

    T0252

    Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
    Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)


    OCR Scan     		PDF SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251