SUM60P05
Abstract: No abstract text available
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
SUM60P05-11LT
SUM60P05-11LT-E3
08-Apr-05
SUM60P05
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AN609
Abstract: SUM60P05-11LT SUM60P05
Text: SUM60P05-11LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUM60P05-11LT
AN609
10-Oct-07
SUM60P05
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TF-265
Abstract: SUM60P05-11LT SUM60P05-11LT-E3 ds vfd SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
SUM60P05-11LT-E3
18-Jul-08
TF-265
SUM60P05-11LT
SUM60P05-11LT-E3
ds vfd
SUM60P05
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SUM60P05
Abstract: No abstract text available
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
SUM60P05-11LT-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SUM60P05
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SUM60P05-11LT
Abstract: SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
S-05060--Rev.
12-Nov-01
SUM60P05-11LT
SUM60P05
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Untitled
Abstract: No abstract text available
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
SUM60P05-11LT
SUM60P05-11LT-E3
11-Mar-11
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T2D21
Abstract: SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
08-Apr-05
T2D21
SUM60P05
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SUM60P05
Abstract: No abstract text available
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
SUM60P05-11LT
SUM60P05-11LT-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUM60P05
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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