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    SUM110N10 Price and Stock

    Vishay Siliconix SUM110N10-09-E3

    MOSFET N-CH 100V 110A TO263
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    SUM110N10-09-E3 Cut Tape 861 1
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    Vishay Intertechnologies SUM110N10-09-E3

    Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM110N10-09-E3)
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    Quest Components SUM110N10-09-E3 338
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    TME SUM110N10-09-E3 578 1
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    Vishay Intertechnologies SUM110N10-08

    Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110N10-08)
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    Vishay Intertechnologies SUM110N10-09-E3.

    Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:437.5W; No. Of Pins:3Pins Rohs Compliant: Yes |Vishay SUM110N10-09-E3.
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    Newark SUM110N10-09-E3. Reel 800
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    Vishay Intertechnologies SUM110N10-09

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    Bristol Electronics SUM110N10-09 784 2
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    Quest Components SUM110N10-09 627
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    SUM110N10 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SUM110N10-08 Vishay Telefunken N-Channel 100-V (D-S) 200C MOSFET Original PDF
    SUM110N10-08 SPICE Device Model Vishay N-Channel 100-V (D-S) 200°C MOSFET Original PDF
    SUM110N10-09 Vishay Intertechnology N-Channel 100-V (D-S) 200°C MOSFET Original PDF
    SUM110N10-09 Vishay Siliconix N-Channel 100-V (D-S) 200C MOSFET Original PDF
    SUM110N10-09 Vishay Siliconix MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:110A; On-Resistance, Rds(on):9.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263; Leaded Process Compatible:No Original PDF
    SUM110N10-09-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 110A D2PAK Original PDF
    SUM110N10-09-E3 Vishay Siliconix N-Channel 100-V (D-S) 200C MOSFET Original PDF
    SUM110N10-09 SPICE Device Model Vishay N-Channel 100-V (D-S) 200°C MOSFET Original PDF

    SUM110N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUM110N10-09

    Abstract: sum110n10
    Text: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V


    Original     		PDF SUM110N10-09 O-263 S-04970--Rev. 29-Oct-01 SUM110N10-09 sum110n10

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3

    SUM110N10-08

    Abstract: No abstract text available
    Text: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V


    Original     		PDF SUM110N10-08 O-263 18-Jul-08 SUM110N10-08

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 125ure S-32523--Rev. 08-Dec-03 SUM110N10-09 SUM110N10-09-E3

    SUM110N10-08

    Abstract: S-22126-Rev
    Text: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V


    Original     		PDF SUM110N10-08 O-263 S-22126--Rev. 25-Nov-02 SUM110N10-08 S-22126-Rev

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUM110N10-09

    Abstract: sum110n10
    Text: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM110N10-09 0-to10V 18-Apr-01 SUM110N10-09 sum110n10

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V


    Original     		PDF SUM110N10-08 O-263 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 200 ° MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SUM110N10-09 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A 8014

    Abstract: AN609 SUM110N10-09
    Text: SUM110N10-09_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM110N10-09 AN609 23-Nov-07 A 8014

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN-826

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN-826

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 11-Mar-11

    SUM110N10-09

    Abstract: SUM110N10-09-E3 sum110n10
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 18-Jul-08 SUM110N10-09 SUM110N10-09-E3 sum110n10

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix New Product N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09 SUM110N10-09-E3 08-Apr-05

    SUM110N10-09

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM110N10-09 S-60674Rev. 01-May-06 SUM110N10-09

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09-E3 18-Jul-08 SUM110N10-09 SUM110N10-09-E3

    SUM110N10-09

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM110N10-09 18-Jul-08 SUM110N10-09

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested


    Original     		PDF SUM110N10-09 O-263 SUM110N10-09 SUM110N10-09-E3 08-Apr-05

    REG IC 48V IN 12V 10A OUT ic

    Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
    Text: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144 REG IC 48V IN 12V 10A OUT ic smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144IRZA ISL6144IVZA

    Untitled

    Abstract: No abstract text available
    Text: MIC2587/MIC2587R Single-Channel, Positive High-Voltage Hot Swap Controller Revision 2.0 General Description Features The MIC2587 and MIC2587R are single-channel positive voltage hot swap controllers designed to provide safe insertion and removal of boards for systems that require


    Original     		PDF MIC2587/MIC2587R MIC2587 MIC2587R

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    Untitled

    Abstract: No abstract text available
    Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144