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    Vishay Siliconix SUD30N03-30

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    Quest Components SUD30N03-30 3,076
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    SUD30N03-30 1,135
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    Vishay Intertechnologies SUD30N04-10-E3

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    Quest Components SUD30N04-10-E3 704
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    Component Electronics, Inc SUD30N04-10-E3 7
    • 1 $2.31
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    Vishay Huntington SUD30N03-30

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    NexGen Digital SUD30N03-30 307
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    SUD30N Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SUD30N Vishay Intertechnology N-Channel Enhancement-Mode Transistor Original PDF
    SUD30N03-30 Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    SUD30N03-30 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUD30N03-30 SPICE Device Model Vishay N-Channel Enhancement-Mode Transistor Original PDF
    SUD30N04-10 Vishay Intertechnology N-Channel 40-V (D-S), 175°C MOSFET Original PDF
    SUD30N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175C MOSFET Original PDF

    SUD30N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c 6093

    Abstract: c 6093 AN609 SUD30N03-30
    Text: SUD30N03-30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD30N03-30 AN609 29-Aug-07 transistor c 6093 c 6093

    70925

    Abstract: SUD30N03-30
    Text: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD30N03-30 0-to-10V 27-Mar-98 70925 SUD30N03-30

    48782

    Abstract: SUD30N03-30
    Text: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUD30N03-30 O-252 S-48782--Rev. 05-Aug-96 48782 SUD30N03-30

    SUD30N03-30

    Abstract: No abstract text available
    Text: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUD30N03-30 O-252 S-49520--Rev. 18-Dec-96 SUD30N03-30

    SUD30N03-30

    Abstract: 70268
    Text: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUD30N03-30 O-252 S-57253--Rev. 24-Feb-98 SUD30N03-30 70268

    SUD30N04-10

    Abstract: No abstract text available
    Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252


    Original     		PDF SUD30N04-10 O-252 S-31724--Rev. 18-Aug-03 SUD30N04-10

    SUD30N04-10

    Abstract: a2057
    Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD30N04-10


    Original     		PDF SUD30N04-10 O-252 S-56917--Rev. 23-Mar-98 SUD30N04-10 a2057

    The subcircuit model was extracted and optimized

    Abstract: SUD30N
    Text: SPICE Device Model SUD30N N-Channel Enhancement-Mode Transistor Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF SUD30N The subcircuit model was extracted and optimized SUD30N

    SUD30N03-30

    Abstract: No abstract text available
    Text: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUD30N03-30 O-252 18-Jul-08 SUD30N03-30

    AN609

    Abstract: SUD30N04-10
    Text: SUD30N04-10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD30N04-10 AN609 29-Aug-07

    SUD30N03-30

    Abstract: No abstract text available
    Text: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD30N03-30 18-Jul-08 SUD30N03-30

    Untitled

    Abstract: No abstract text available
    Text: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUD30N03-30 O-252 SUD30N03-30 08-Apr-05

    SUD30N04-10

    Abstract: No abstract text available
    Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252


    Original     		PDF SUD30N04-10 O-252 18-Jul-08 SUD30N04-10

    Untitled

    Abstract: No abstract text available
    Text: SUD30N03-30 Siliconix N-Channel 30-V D-S , 175_C MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUD30N03-30 O-252 SUD30N03-30 S-57253--Rev. 24-Feb-98

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: TOSHIBA DIODE CATALOG IRF7313 chemicon oscon 25PS100JM12 Nippon capacitors
    Text: XC9213 Series ETR0505_001 Synchronous Step-Down DC/DC Controller IC - Input Voltage : 25V ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9213 series is N-ch & N-ch drive, synchronous, step-down DC/DC controller IC with a built-in bootstrap driver circuit.


    Original     		PDF XC9213 ETR0505 Audio Power Amplifier MOSFET TOSHIBA TOSHIBA DIODE CATALOG IRF7313 chemicon oscon 25PS100JM12 Nippon capacitors

    MTD20NO6HD

    Abstract: mbro530 MBRO530T1 PC40-EPC17 LT1693 inverter 12v to 220 ac mosfet based CPHS-EFD20-1S-10P marking t1c SMD403 2N7002 PHILIPS MARKING
    Text: LTC1693 High Speed Single/Dual MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1693 family drives power MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. Dual MOSFET Drivers in SO-8 Package


    Original     		PDF LTC1693 LTC1693-1 LT1161 LTC1163 LT1339 LTC1435 1693f MTD20NO6HD mbro530 MBRO530T1 PC40-EPC17 LT1693 inverter 12v to 220 ac mosfet based CPHS-EFD20-1S-10P marking t1c SMD403 2N7002 PHILIPS MARKING

    irf3205 mosfet transistor

    Abstract: No abstract text available
    Text: LT1339 High Power Synchronous DC/DC Controller U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1339 is a high power synchronous current mode switching regulator controller. The IC drives dual N-channel MOSFETs to create a single IC solution for high


    Original     		PDF LT1339 000pF 150kHz LTC1435A LTC1438 LT1680 sn1339 1339fas irf3205 mosfet transistor

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    40A 48v charger Schematic Diagram

    Abstract: 12v step-down transformer operations files AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter bjt Self-Oscillating Flyback Converters ZVS Royer Self-Oscillating mobile charger 24V 20A SIEMENS battery charger spice model SFH213 fluorescent lamp driver 4W T5 3.1v to 350v ZENER DIODE
    Text: LINEAR TECHNOLOGY NOVEMBER 2000 IN THIS ISSUE… COVER ARTICLE 3MHz Synchronous Boost Regulators Save Critical Board Space in Portable Applications . 1 Mark Jordan Issue Highlights . 2 LTC in the News . 2


    Original     		PDF OT-23 10MHz D-70567 40A 48v charger Schematic Diagram 12v step-down transformer operations files AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter bjt Self-Oscillating Flyback Converters ZVS Royer Self-Oscillating mobile charger 24V 20A SIEMENS battery charger spice model SFH213 fluorescent lamp driver 4W T5 3.1v to 350v ZENER DIODE

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SI3456DV

    Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
    Text: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30/31 Hotswap Controllers Heping Dai PMP Systems Power ABSTRACT The TPS2300/01/10/11/20/21/30/31 hotswap controllers allow safe board insertion and removal from a live backplane. With the current-sensing resistor RSENSE and the


    Original     		PDF SLVA135 TPS2300/01/11/20/21/30/31 TPS2300/01/10/11/20/21/30/31 TPS23xx SI3456DV SI4420DY SI4874DY SUD50N03 lmt zener

    Untitled

    Abstract: No abstract text available
    Text: SUD30N04-10 Siliconix N-Channel 40-V D-S , 175°C MOSFET Product Summary V(BR)DSS (V) 40 Id (A) rDS(on) (£2) 0.010 @ V gs = 10 V 0.014 @ VGs = 4.5 V 30a 30a D Q TO-252 Drain Connected to Tab G D S Top View Order Number: SUD30N04-10 6 S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF SUD30N04-10 O-252 S-56917â 23-Mar-98

    Untitled

    Abstract: No abstract text available
    Text: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY Id r DS(on) (-2) V (BR)DSS (V ) (A) 0 .0 1 0 @ V GS = 10 V 30 a 0.014 @ VGS = 4.5 V 30 a 40 D Q TO-252 o Jl nr G D Drain C onnected to Tab S Top View o s O rder Number:


    OCR Scan     		PDF SUD30N04-10 O-252 ar-98

    T0252

    Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
    Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)


    OCR Scan     		PDF SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251