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    Vishay Siliconix SUB60N06-18

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    Quest Components SUB60N06-18 458
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    Vishay Intertechnologies SUB60N06-18

    Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-263 (Alt: SUB60N06-18)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SUB60N06-18 26 Weeks 800
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    SUB60N06 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB60N06-18 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUB60N06-18 Vishay Intertechnology N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUB60N06-18-E3 Vishay Transistor Mosfet N-CH 60V 60A 3TO-263 Original PDF
    SUB60N06-18 SPICE Device Model Vishay N-Channel Enhancement-Mode Transistor Original PDF

    SUB60N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUB60N06

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB60N06-18 S-60454Rev. 10-Apr-06 SUB60N06

    sup60n06-18

    Abstract: SUB60N06-18
    Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 57253--Rev. 24-Feb-98 sup60n06-18 SUB60N06-18

    sub60n06

    Abstract: sup60n06-18 SUB60N06-18
    Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 08-Apr-05 sub60n06 sup60n06-18 SUB60N06-18

    SUB60N06-18

    Abstract: 2364 diode SUB60N06 transistor 2364
    Text: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB60N06-18 0-to-10V 09-Apr-03 SUB60N06-18 2364 diode SUB60N06 transistor 2364

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB60N06-18 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUP60N06-18 SUB60N06-18 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98

    SUP60N06-18

    Abstract: SUB60N06-18 SUB60N06
    Text: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUP60N06-18 SUB60N06-18 SUB60N06

    SUB60N06-18

    Abstract: SUP60N06-18
    Text: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUB60N06-18 SUP60N06-18

    SUB60N06

    Abstract: SUP60N06 B0905
    Text: SUP/SUB60N06Ć18 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB60N06Ć18 Top View NĆChannel MOSFET


    Original     		PDF SUP/SUB60N0618 O220AB SUB60N0618 SUP60N0618 O220AB P38333Rev. SUB60N06 SUP60N06 B0905

    TR1111

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB60N06-18 18-Jul-08 TR1111

    sup60n06-18

    Abstract: SUB60N06-18
    Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 18-Jul-08 sup60n06-18 SUB60N06-18

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    pulse load resistors wattage calculation

    Abstract: zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 MIC2584 MIC2585 Si7892DP
    Text: MIC2584/2585 Micrel MIC2584/MIC2585 Dual-Channel Hot Swap Controller/Sequencer General Description Features The MIC2584 and MIC2585 are dual-channel positive voltage hot swap controllers designed to facilitate the safe insertion of boards into live system backplanes. The MIC2584


    Original     		PDF MIC2584/2585 MIC2584/MIC2585 MIC2584 MIC2585 MIC2584 16-pin 24-pin MIC2584/85 MIC2585 pulse load resistors wattage calculation zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 Si7892DP

    MIC2182

    Abstract: Thermal Shut Down Functioned MOSFET 200 Ampere pmosfet power transistor c 5664 LTC1642 MIC2085 MIC2086 Si7892DP TCR22-4 ZTX788A
    Text: MIC2085/MIC2086 Single Channel Hot Swap Controllers General Description The MIC2085 and MIC2086 are single channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2085and MIC2086 are available in 16-pin and 20-pin


    Original     		PDF MIC2085/MIC2086 MIC2085 MIC2086 MIC2085and 16-pin 20-pin MIC2085/86 M9999-050406 MIC2182 Thermal Shut Down Functioned MOSFET 200 Ampere pmosfet power transistor c 5664 LTC1642 Si7892DP TCR22-4 ZTX788A

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    BAT45C

    Abstract: phd55n03 MOTHERBOARD CIRCUIT diagram explained 16550C power supply tracks of computer motherboard MOTHERBOARD pcb power-on CIRCUIT diagram ADM1051JR SUB60N06-18 8205 mosfet ADM1051
    Text: a Precision Dual Voltage Regulator Controllers ADM1051/ADM1051A GENERAL DESCRIPTION FEATURES Two Independent Controllers on One Chip 1.515 V and 1.818 V Outputs Shutdown Inputs to Control Each Channel Compatible with PC Motherboard TYPEDET Signal ؎2.5% Accuracy Over, Line, Load, and Temperature


    Original     		PDF ADM1051/ADM1051A ADM1051A ADM1051/ADM1051A O-220 C00400 BAT45C phd55n03 MOTHERBOARD CIRCUIT diagram explained 16550C power supply tracks of computer motherboard MOTHERBOARD pcb power-on CIRCUIT diagram ADM1051JR SUB60N06-18 8205 mosfet ADM1051

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    SUB60N06-14

    Abstract: p60n
    Text: Tem ic SUP/SUB60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) Id r DS(on) (S2) 60 0.014 (A) 603 D T 0-220A B O o T O -263 o D R A IN con n ected to TA B G D S Top View G D S SU B60N 06-14


    OCR Scan     		PDF SUP/SUB60N06-14 -220A SUB60N06-14 p60n

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263tors S-57253â 24-Feb-98

    bma 023

    Abstract: SUB60N06-14 SUP60N06-14
    Text: T e m ic SUP/SUB60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) 60 0.014 : I d (A) 60a T0-220AB o TO-263 o D R A IN con n ected to TAB n G D S Top View GD Ò S S SU B60N06-14


    OCR Scan     		PDF sup/sub60n06-14 O-220AB SUP60N06-14 O-263 SUB60N06-14 O-220AB O-263) O-263 A554735 bma 023 SUB60N06-14 SUP60N06-14

    38-333

    Abstract: No abstract text available
    Text: T em ic SUP/SUB60N06-18 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary RfDSi <V > • taK n O ) 60 0.018 60 TO-220AJB o T O -2 6 3 ■«Jh D R A I N c o n n e c te d to T AB CDS Top V iew G D S S U B 6 0 N 0 6 -1 8


    OCR Scan     		PDF SUP/SUB60N06-18 O-220AJB 06-1X P-38333-- 38-333

    SUB60N06-08

    Abstract: No abstract text available
    Text: T e m ic SUB60N06-08 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (ß ) I d (A) 0.008 603 60 D p TO-263 ( 1 o jj u y DRAIN connected to TAB G D S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF SUB60N06-08 O-263 SUB60N06-08

    T0252

    Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
    Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)


    OCR Scan     		PDF SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251