ct4 dale
Abstract: MIL-R-22684 Dale Electronics
Text: MODEL CT M etal Film Resistors M ilita ry , M 1L-R-22684 Q ualified , Type RL and In d u strial Sem i-Precision FEATURES • Electroplated tin-lead solder finish leads • Semi-Precision resistors combine long-term stability with low inductance, low noise and low cost
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1L-R-22684
MIL-R-22684
RL07S
362-560C
ct4 dale
Dale Electronics
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25X2
Abstract: 2SA770 2SA771 w506
Text: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦*. i * F o r g e n e ra l and in d u stria l
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2SA770
2SA771
O-220
2SC1985/1986
O-220)
2SA771
25X2
w506
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Untitled
Abstract: No abstract text available
Text: -6433 B HARRIS CMOS Quad Bus Separator/Driver Features Pinout TOP VIEW SINGLE POWER SUPPLY HIGH NOISE IM M UNITY w c " IN DU STRIAL AND M IL IT A R Y GRADES ’* [ DRIVE C APA CITY ’• [ 300pF ,y [ SOURCE C U R R E N T 4mA SINK C U R R E N T 6mA PROPAGATIO N D E L A Y
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300pF
50nsec
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brimar
Abstract: No abstract text available
Text: F/7001 In d u strial T ype rt- I MAX. x < TYPE F/7001 BEAM TETRODE The B R IM A R F/7001 is a miniature beam tetrode intended prim arily for use as an R.F. amplifier up to 50 Mc/s in mobile equipment. It is a T rustw orthy valve and has been designed for use under adverse conditions of vibration and shock.
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F/7001
F/7001
brimar
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Thyratron
Abstract: ME1502 Mullard i-089
Text: T R IO D E T H Y R A T R O N ANI T riode inert-gas-filled thyratron with negative control ch a racteristic. P rim a rily d esigne d for in d u strial control applications. " • IO N S A N D , preceding This data sheet should be read in conjunction wi
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ME1502)
200mA
Thyratron
ME1502
Mullard
i-089
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brimar
Abstract: No abstract text available
Text: im In d u stria l T yp e r - 2 " - 4 MAX TYPE 7032 GATING HEPTODE t « n . 2 P's J 0 0 uni I The B RIM A R 7032 is a m iniature heptode with short grid base characteristics on grid 1 and grid 3. It is of Tru stw orth y construction and is intended for use
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3CX10000A3
Abstract: No abstract text available
Text: TENTATIVE DATA 8159 3CX10,OOOA3 MEDIUM-MU POWER TRIODE The Eimac 3CX10, 000A3 i s a ceram ic and metal power triode in tended primarily for u s e a s a power o s c illa t o r in in d u stria l-h e atin g a p p l ic a t io n s . It i s a l s o recommended for u s e a s a grounded-grid
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3CX10
3CX10,
000A3
3CX10000A3
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VR105
Abstract: oc3 vr105 g105-1d
Text: Ref.: G105/1D Cold-Cathode Yoltage-Stabiliser Code: VRI05/30 CV686 ^ T h e V R 1 0 5 30 is a cold-cathode, gas-filled, voltage-stabiliser fo r use in in d u stria l and radio e q u ip m e n t w h e re a stable so u rce of voltage is req uired . It is equivalent t o the U .S.A . O C 3 type.
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G105/1D
VRI05/30
CV686)
VR105
G105/1Dâ
CV686
I04-8
G10S/1Dâ
oc3 vr105
g105-1d
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm
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MP4005
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thyristor mcr 406
Abstract: MCR206 MCR205 MCR201 MCR202 MCR203 MCR204
Text: N1CR201 SILICON thru MCR206 G A Cl 13 k SILICON CONTROLLED RECTIFIERS 0.5 AMPERE RMS 15 thru 200 VOLTS SIGNAL THYRISTORS . . . Annular PNPN devices designed fo r ind u stria l/m ilita ry applica tions such as relay and lamp drivers, small m o to r controllers and
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MCR201
MCR206
MCR201
MCR202
MCR203
MCR206
-MCR201
MCR204-
thyristor mcr 406
MCR205
MCR204
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VX30
Abstract: VX15 VX20 VX25 VX40 VX50
Text: HIGH VOLTAGE SILICON RECTIFIERS VX15-50 MULTISTAC Fast Recovery FEATURES D ES C R IP TIO N • • • • • The VX M U LT IS TA C s ilico n re c tifie r assem blies meet th e strin g e n t re lia b ility requirem ents o f com m ercial, ind u stria l and
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VX15-50
15kVto50kV
250nS
VX30
VX15
VX20
VX25
VX40
VX50
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MRF817
Abstract: f817 S201 CASE-244 SS01
Text: MRF817 SILICON The RF Line 2.5 W - 900 M Hz R F POWER T R A N S IS T O R NPN S IL IC O N R F POWER T R A N S IS T O R NPN S IL IC O N . . . designed fo r 13.6 V o lt U H F large-signal a m p lifie r a p p lic a tio n s in in du stria l and com m e rcial FM e q u ip m e n t ope ra tin g to 960 MHz.
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MRF817
6-590-65-4A
MRF817
f817
S201
CASE-244
SS01
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mrf-232
Abstract: 1803 TRANSISTOR equivalent MRF232 VK200
Text: MRF232 SILICON T h e R F L in e 7.5 W - 9 0 M H z RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTORS N PN S IL IC O N .d e s ig n e d fo r 12.5 V o lt, m id-band large-signal a m p lifie r a p p li cations in Ind u stria l and com m e rcia l FM e q u ip m e n t o p e ra tin g in the
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MRF232
mrf-232
1803 TRANSISTOR equivalent
MRF232
VK200
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2n2405
Abstract: 2N1893
Text: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t
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2N1893,
2N2405
2N1893
2N2405*
2N2405.
10VOLTS
2n2405
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MPS06
Abstract: 2N21 MP500 MP504 MP506 TNR*G MP501 MP502 MP505 Germanium power
Text: MP500 ri.ru MP502 GERMANIUM MP504 thru MP506 PN P germ anium power tr a n sisto r s for h igh-gain, high-power am p lifier and sw itching applications in high r e lia b ility ind u strial equipment. S T Y L E 1: P IN I. B ASE 3. C O L L E C T O R (C O N N E C T E D T O
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MP500
MP502
MP504
MP506
MP501
MP505
MP506
MPS06
2N21
TNR*G
MP502
Germanium power
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TA7303
Abstract: 2N5180 pj 0209 RCA-2N5180 14780 2n5180 rca h.1299
Text: File No. 289 QQQBÆI R F Power Tran sisto rs Solid State Division 2N5180 Silicon N-P-N Epitaxial Planar Transistor F o r V H F A p p lica tio n s in Ind u strial and C om m ercial E q u ip m e n t Features: • ■ ■ ■ » ■ High gaitvbandwidth product
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2N5180
h-1299
RCA-2N5180*
TA7303
2N5180
pj 0209
RCA-2N5180
14780
2n5180 rca
h.1299
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1d105
Abstract: unitrode Applications Note 1D100 100S ID100 ID103 ID104 ID105 ID106 unitrode op 02
Text: ID100-ID106 SCRs .5 Amp, Planar FEA TU RES • Voltage R a tin g s: to 400V • M axim um Gate T rigg er C u rre n t: 200/iA • H e rm e tically S e aled TO-18 M etal Can • P lan ar P assiv ate d C o n stru ction D ESCR IPTIO N T h is Data S h e e t d e sc rib e s U n itro d e's lin e of h e rm e tic a lly se ale d in d u stria l S C R s
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ID100-ID106
200/iA
ID100
ID103
ID104
ID105
ID106
1d105
unitrode Applications Note
1D100
100S
ID106
unitrode op 02
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MRF603
Abstract: 1803 TRANSISTOR equivalent K 2642 transistor R/MRF603
Text: MRF603 silicon T h e R F L in e 1 0 W - 175 MHz R F POWER T R A N SISTO R NPN SILICO N NPN SILIC O N R F POWER TRA N SISTO R . . .d esig n ed fo r 1 2 .5 V o lt V H F large-signal p o w e r a m p lifie r a p p lic a t io n s re q u ire d in m ilit a ry and in d u stria l e q u ip m e n t o p era tin g t o 3 0 0
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MRF603
175MHz)
VK-200-20/4B
MRF603
1803 TRANSISTOR equivalent
K 2642 transistor
R/MRF603
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2SD103
Abstract: 2SD102 2SB502 2SB503 AC74 TU-23
Text: v U □ > N P N f i* M È è » l‘ 7 > ì> 7 ^ SILICON N PN DIFFUSED JUNCTION TRANSISTOR 2 S D 1 , 2 2 S D 1 3 S it I lff i In d u stria l A pplications OJzWJlX'f o DC— DC O B ilS U ^ a . U — O Audio Pow er Amplifier, Pow er Sw itching, DC—DC C onverter
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2SD102,
2SD103
2SD102)
2SD103)
2SB502,
2SB503
2SB502
2SB503.
2SD102
2SD103
AC74
TU-23
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T2L fuse
Abstract: HD-234 HD-235 HD-534 HD-535 Logic PROBE diagram circuit 535 column driver
Text: nn HD-234/534 h a r r is \jQ fj Hex Interface Inverters HD-235/535 Hex Interface Drivers GENERAL DESCRIPTION Th e integrated circu its covered b y th is data sheet fo rm a part of H a rris' fam ily of M ilita ry and In d u stria l M o n o lit h ic Interface C ir
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HD-234/534
HD-235/535
Me-19
O-116
248-H
Me-20
T2L fuse
HD-234
HD-235
HD-534
HD-535
Logic PROBE diagram circuit
535 column driver
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Wire Cable AWG
Abstract: M135
Text: ‘+ 3 1 1830^5 épi!? IN stria wire No. DESCRIPTION 1 PLUG 2 PLUG HOLDER used 30P black color PVC. M135 BAND WIRE black enfold gluey wire. EA 1 EA 1 MM MM O UL2468 AWG#24 0. 16 by 11 rootlets, black color twin wire, 0. D. 1.8 by 3.6 ±0. 1mm. CABLE 0’
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UL2468
600VAC,
24AWG
CA-2189
Wire Cable AWG
M135
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Untitled
Abstract: No abstract text available
Text: Panasonic T yp e : P art No.: D igital T e rre stria l T u n e r CT10TS EN A 4IZO IIIO IIIO T y p e C T 1 0 T S D o u b le C o n v e r s io n , h ig h p e r f o r m a n c e fo r d ig ita l / a n a lo g c o m p a t ib le tr a n s m is s io n r e c e iv e r .
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CT10TS
CT10TS
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as2531
Abstract: AS2531F AS2531G AS2531A auto dialling circuit AS2531B
Text: Data Sheet A S 2 5 3 1 A / B / C / D / E /F /G /J / U Versatile Single Chip Telephone with 14 N um ber R epertory Dialler A u stria M ikro S yste m e In te rn a tio n al AG General Description Key Features The AS2531 is a CMOS integrated circuit that contains
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AS2531
AS2531
AS2531D)
AS2531F
AS2531G
AS2531A
auto dialling circuit
AS2531B
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S2535
Abstract: AN3010 AS2533 an 2533T
Text: Data Sheet AS2533/4B/5/6 M ulti-Standard CM OS Single Chip Telephone 1C with Dual Soft Clipping A u stria M ikro S yste m e In te rn a tio n al AG General Description Key Features □ Line/speech circuit, LD/MF repertory dialler and tone ringer on one 28 pin CMOS chip
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AS2533/4B/5/6
AS253x
AS2534B)
AS2535)
S2535
AN3010
AS2533 an
2533T
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