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    STPSC Price and Stock

    STMicroelectronics STPSC5H12D

    DIODE SIL CARB 1.2KV 5A TO220AC
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    DigiKey STPSC5H12D Tube 2,778 1
    • 1 $3.99
    • 10 $3.354
    • 100 $2.7134
    • 1000 $2.06517
    • 10000 $1.86562
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    Newark STPSC5H12D Bulk 2,656 1
    • 1 $4.57
    • 10 $3.9
    • 100 $3.23
    • 1000 $2.91
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    STMicroelectronics STPSC5H12D 854 1
    • 1 $3.91
    • 10 $3.28
    • 100 $2.66
    • 1000 $2.36
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    TME STPSC5H12D 1
    • 1 $3.85
    • 10 $3.46
    • 100 $2.75
    • 1000 $2.62
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    Avnet Silica STPSC5H12D 20,950 17 Weeks 50
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    STMicroelectronics STPSC4H065B-TR

    DIODE SIL CARBIDE 650V 4A DPAK
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    DigiKey STPSC4H065B-TR Reel 2,500 2,500
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    • 10000 $0.73884
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    STPSC4H065B-TR Cut Tape 876 1
    • 1 $1.7
    • 10 $1.414
    • 100 $1.1256
    • 1000 $0.8081
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    Newark STPSC4H065B-TR Cut Tape 7,190 1
    • 1 $2.14
    • 10 $1.81
    • 100 $1.47
    • 1000 $1.1
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    STMicroelectronics STPSC4H065B-TR 4,542 1
    • 1 $1.67
    • 10 $1.39
    • 100 $1.11
    • 1000 $0.93
    • 10000 $0.93
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    STMicroelectronics STPSC10H12G-TR

    DIODE SIL CARB 1.2KV 10A D2PAK
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    DigiKey STPSC10H12G-TR Reel 2,000 1,000
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    • 1000 $2.66321
    • 10000 $2.50769
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    STPSC10H12G-TR Cut Tape 269 1
    • 1 $5.15
    • 10 $4.325
    • 100 $3.4991
    • 1000 $3.11032
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    Avnet Americas STPSC10H12G-TR Reel 25 Weeks 1,000
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    • 1000 $2.85818
    • 10000 $2.56948
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    Newark STPSC10H12G-TR Cut Tape 1,246 1
    • 1 $6.02
    • 10 $5.59
    • 100 $4.63
    • 1000 $3.53
    • 10000 $3.53
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    Avnet Silica STPSC10H12G-TR 2,000 17 Weeks 1,000
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    STMicroelectronics STPSC10TH13TI

    DIODE ARRAY SCHOTTKY 650V TO220
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    DigiKey STPSC10TH13TI Tube 1,043 1
    • 1 $6.84
    • 10 $6.84
    • 100 $4.8823
    • 1000 $3.87711
    • 10000 $3.633
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    Avnet Americas STPSC10TH13TI Tube 2,000 19 Weeks 1,000
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    • 1000 $4.06214
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    TME STPSC10TH13TI 1
    • 1 $9.06
    • 10 $8.15
    • 100 $6.47
    • 1000 $6.18
    • 10000 $6.18
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    Avnet Silica STPSC10TH13TI 1,500 17 Weeks 50
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    STMicroelectronics STPSC10H065G2-TR

    DIODE SIL CARBIDE 650V 10A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC10H065G2-TR Reel 1,000 1,000
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    • 1000 $1.79411
    • 10000 $1.62075
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    STPSC10H065G2-TR Cut Tape 278 1
    • 1 $3.47
    • 10 $2.914
    • 100 $2.3572
    • 1000 $2.0953
    • 10000 $2.0953
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    Avnet Americas STPSC10H065G2-TR Reel 25 Weeks 1,000
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    • 1000 $1.92545
    • 10000 $1.73096
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    Mouser Electronics STPSC10H065G2-TR 1,720
    • 1 $3.47
    • 10 $2.92
    • 100 $2.36
    • 1000 $2.09
    • 10000 $1.68
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    STMicroelectronics STPSC10H065G2-TR 1,720 1
    • 1 $3.4
    • 10 $2.86
    • 100 $2.31
    • 1000 $2.06
    • 10000 $2.06
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    Avnet Silica STPSC10H065G2-TR 1,000 17 Weeks 1,000
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    Find more STPSC price and stock on Findchips.com

    STPSC Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STPSC10065D STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF
    STPSC10065DLF STMicroelectronics 650 V 10 A POWER SCHOTTKY SILICO Original PDF
    STPSC10065DY STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF
    STPSC10065G2-TR STMicroelectronics 650 V POWER SCHOTTKY SILICON CAR Original PDF
    STPSC10065GY-TR STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS Original PDF
    STPSC1006D STMicroelectronics 600 V power Schottky silicon carbide diode Original PDF
    STPSC1006G-TR STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK Original PDF
    STPSC10C065RY STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF
    STPSC10H065B-TR STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK Original PDF
    STPSC10H065BY-TR STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY Original PDF
    STPSC10H065D STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC Original PDF
    STPSC10H065DI STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC Original PDF
    STPSC10H065DLF STMicroelectronics DIODES AND RECTIFIERS Original PDF
    STPSC10H065DY STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC Original PDF
    STPSC10H065G2-TR STMicroelectronics 650 V, 10 A HIGH SURGE SILICON C Original PDF
    STPSC10H065G-TR STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK Original PDF
    STPSC10H065GY-TR STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK Original PDF
    STPSC10H12B2-TR STMicroelectronics 1200V, 10A, SILICON CARBIDE POWE Original PDF
    STPSC10H12B-TR1 STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK Original PDF
    STPSC10H12CWL STMicroelectronics Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247 Original PDF

    STPSC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STPSC1006D

    Abstract: No abstract text available
    Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006 O-220AC STPSC1006any STPSC1006D

    Untitled

    Abstract: No abstract text available
    Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		PDF STPSC16H065C O-220AB STPSC16H065CT DocID024810

    STPSC606D

    Abstract: STPSC606 STPSC606G-TR STPSC606G
    Text: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC606 O-220AC STPSC606D STPSC606G STPSC606D STPSC606 STPSC606G-TR STPSC606G

    STPSC

    Abstract: 8a650
    Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC8H065 STPSC 8a650

    Untitled

    Abstract: No abstract text available
    Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247

    Untitled

    Abstract: No abstract text available
    Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598

    Untitled

    Abstract: No abstract text available
    Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		PDF STPSC20H065C O-220AB STPSC20H065CT DocID023605

    Untitled

    Abstract: No abstract text available
    Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		PDF STPSC8H065C O-220AB STPSC8H065CT DocID024808

    STPSC806

    Abstract: STPSC806D STPSC806G-TR
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806 O-220AC STPSC806D STPSC806 STPSC806D STPSC806G-TR

    Untitled

    Abstract: No abstract text available
    Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC2006CW O-247

    STPSC1206D

    Abstract: STPSC1206 16288
    Text: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		PDF STPSC1206 STPSC1206D STPSC1206 16288

    Untitled

    Abstract: No abstract text available
    Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603

    Untitled

    Abstract: No abstract text available
    Text: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		PDF STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631

    Untitled

    Abstract: No abstract text available
    Text: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		PDF STPSC6TH13TI DocID024696

    STPSC20H065C

    Abstract: STPSC20H065CW diode 1.e
    Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1


    Original     		PDF STPSC20H065C STPSC20H065C STPSC20H065CW diode 1.e

    Untitled

    Abstract: No abstract text available
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806 O-220AC STPSC806D

    STPSC1006D

    Abstract: JESD97
    Text: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006D O-220AC STPSC100n STPSC1006D JESD97

    STPSC2006

    Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
    Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC2006CW O-247 STPSC2006 STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING

    Untitled

    Abstract: No abstract text available
    Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604

    Untitled

    Abstract: No abstract text available
    Text: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.


    Original     		PDF STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631

    Untitled

    Abstract: No abstract text available
    Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		PDF STPSC16H065C O-220AB STPSC16H065CT DocID024810

    Untitled

    Abstract: No abstract text available
    Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		PDF STPSC12H065C O-220AB STPSC12H065CT DocID024809

    STPSC1006D

    Abstract: STPSC1006G 16-2-87
    Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87

    Untitled

    Abstract: No abstract text available
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


    Original     		PDF STPSC806 O-220AC STPSC806D