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STMicroelectronics STPSC2H065B-TR DIODE SIL CARBIDE 650V 2A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC2H065B-TR	Cut Tape	4,630		1	1 $2.07 10 $1.324 100 $2.07 1000 $0.65405 10000 $0.65405	Buy Now
	STPSC2H065B-TR	Digi-Reel	4,630		1	1 $2.07 10 $1.324 100 $2.07 1000 $0.65405 10000 $0.65405	Buy Now
	STPSC2H065B-TR	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.55162	Buy Now
Mouser Electronics	STPSC2H065B-TR		6,993			1 $1.47 10 $1.14 100 $0.799 1000 $0.602 10000 $0.551	Buy Now
Newark	STPSC2H065B-TR	Cut Tape	4,831		1	1 $0.676 10 $0.676 100 $0.676 1000 $0.595 10000 $0.52	Buy Now
STMicroelectronics	STPSC2H065B-TR		6,993		1	1 $1.44 10 $1.12 100 $0.78 1000 $0.64 10000 $0.64	Buy Now
Avnet Silica	STPSC2H065B-TR		320,000	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STPSC20H12G-TR DIODE SIL CARB 1.2KV 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC20H12G-TR	Reel	4,000		1,000	1 - 10 - 100 - 1000 $4.58562 10000 $4.58562	Buy Now
Newark	STPSC20H12G-TR	Cut Tape	1,939		1	1 $9.01 10 $7.09 100 $5.76 1000 $5.5 10000 $5.5	Buy Now
STMicroelectronics	STPSC20H12G-TR		828		1	1 $8.16 10 $6.05 100 $4.64 1000 $4.5 10000 $4.5	Buy Now
Avnet Silica	STPSC20H12G-TR		6,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STPSC15H12G2Y-TR DIODE SIL CARB 1.2KV 15A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC15H12G2Y-TR	Digi-Reel	931		1	1 $9.15 10 $6.264 100 $9.15 1000 $4.09162 10000 $4.09162	Buy Now
	STPSC15H12G2Y-TR	Cut Tape	931		1	1 $9.15 10 $6.264 100 $9.15 1000 $4.09162 10000 $4.09162	Buy Now
Avnet Americas	STPSC15H12G2Y-TR	Reel		25 Weeks	1,000	1 - 10 - 100 - 1000 $4.25529 10000 $4.00979	Buy Now
Mouser Electronics	STPSC15H12G2Y-TR		871			1 $7.87 10 $5.62 100 $4.29 1000 $4.09 10000 $4.09	Buy Now
STMicroelectronics	STPSC15H12G2Y-TR		871		1	1 $7.71 10 $5.51 100 $4.2 1000 $4.02 10000 $4.02	Buy Now
Avnet Silica	STPSC15H12G2Y-TR		2,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STPSC12065D DIODE SIL CARB 650V 12A TO220AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC12065D	Tube	749		1	1 $4.55 10 $3.007 100 $4.55 1000 $1.63629 10000 $1.61288	Buy Now
STMicroelectronics	STPSC12065D		726		1	1 $3.67 10 $2.61 100 $1.94 1000 $1.67 10000 $1.67	Buy Now
TME	STPSC12065D				1	1 $3.91 10 $3.51 100 $2.8 1000 $2.66 10000 $2.66	Get Quote
Avnet Silica	STPSC12065D		2,000	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STPSC12065D		500	20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STPSC40H12CWY DIODE ARRAY SIC 1200V 20A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STPSC40H12CWY	Tube	600		1	1 $19.24 10 $13.747 100 $19.24 1000 $19.24 10000 $19.24	Buy Now
STMicroelectronics	STPSC40H12CWY		596		1	1 $17.88 10 $13.47 100 $10.55 1000 $10.55 10000 $10.55	Buy Now
Avnet Silica	STPSC40H12CWY		540	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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STPSC Datasheets (106)

Part	Manufacturer	Description	Datasheet Type	PDF
STPSC10065D	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF
STPSC10065DLF	STMicroelectronics	650 V 10 A POWER SCHOTTKY SILICO	Original	PDF
STPSC10065DY	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF
STPSC10065G2-TR	STMicroelectronics	650 V POWER SCHOTTKY SILICON CAR	Original	PDF
STPSC10065GY-TR	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODES AND RECTIFIERS	Original	PDF
STPSC1006D	STMicroelectronics	600 V power Schottky silicon carbide diode	Original	PDF
STPSC1006G-TR	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 600V 10A D2PAK	Original	PDF
STPSC10C065RY	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY	Original	PDF
STPSC10H065B-TR	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A DPAK	Original	PDF
STPSC10H065BY-TR	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - AUTOMOTIVE 650 V POWER SCHOTTKY	Original	PDF
STPSC10H065D	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF
STPSC10H065DI	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A TO-220AC	Original	PDF
STPSC10H065DLF	STMicroelectronics	DIODES AND RECTIFIERS	Original	PDF
STPSC10H065DY	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 650V 10A TO220AC	Original	PDF

STPSC10H065G2-TR	STMicroelectronics	650 V, 10 A HIGH SURGE SILICON C	Original	PDF
STPSC10H065G-TR	STMicroelectronics	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 10A D2PAK	Original	PDF
STPSC10H065GY-TR	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHTY SIC 650V 10A D2PAK	Original	PDF
STPSC10H12B2-TR	STMicroelectronics	1200V, 10A, SILICON CARBIDE POWE	Original	PDF
STPSC10H12B-TR1	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A DPAK	Original	PDF
STPSC10H12CWL	STMicroelectronics	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 1200V TO247	Original	PDF

STPSC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STPSC1006D Abstract: No abstract text available Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power	Original	STPSC1006 O-220AC STPSC1006any STPSC1006D	PDF
Untitled Abstract: No abstract text available Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material	Original	STPSC16H065C O-220AB STPSC16H065CT DocID024810	PDF
STPSC606D Abstract: STPSC606 STPSC606G-TR STPSC606G Text: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power	Original	STPSC606 O-220AC STPSC606D STPSC606G STPSC606D STPSC606 STPSC606G-TR STPSC606G	PDF
STPSC Abstract: 8a650 Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power	Original	STPSC8H065 STPSC 8a650	PDF
Untitled Abstract: No abstract text available Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247	PDF
Untitled Abstract: No abstract text available Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598	PDF
Untitled Abstract: No abstract text available Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC20H065C O-220AB STPSC20H065CT DocID023605	PDF
Untitled Abstract: No abstract text available Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC8H065C O-220AB STPSC8H065CT DocID024808	PDF
STPSC806 Abstract: STPSC806D STPSC806G-TR Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power	Original	STPSC806 O-220AC STPSC806D STPSC806 STPSC806D STPSC806G-TR	PDF
Untitled Abstract: No abstract text available Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power	Original	STPSC2006CW O-247	PDF
STPSC1206D Abstract: STPSC1206 16288 Text: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material	Original	STPSC1206 STPSC1206D STPSC1206 16288	PDF
Untitled Abstract: No abstract text available Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603	PDF
Untitled Abstract: No abstract text available Text: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.	Original	STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631	PDF
Untitled Abstract: No abstract text available Text: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC6TH13TI DocID024696	PDF

STPSC20H065C Abstract: STPSC20H065CW diode 1.e Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1	Original	STPSC20H065C STPSC20H065C STPSC20H065CW diode 1.e	PDF
Untitled Abstract: No abstract text available Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power	Original	STPSC806 O-220AC STPSC806D	PDF
STPSC1006D Abstract: JESD97 Text: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power	Original	STPSC1006D O-220AC STPSC100n STPSC1006D JESD97	PDF
STPSC2006 Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power	Original	STPSC2006CW O-247 STPSC2006 STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING	PDF
Untitled Abstract: No abstract text available Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure	Original	STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604	PDF
Untitled Abstract: No abstract text available Text: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required.	Original	STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631	PDF
Untitled Abstract: No abstract text available Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material	Original	STPSC16H065C O-220AB STPSC16H065CT DocID024810	PDF
Untitled Abstract: No abstract text available Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	STPSC12H065C O-220AB STPSC12H065CT DocID024809	PDF
STPSC1006D Abstract: STPSC1006G 16-2-87 Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power	Original	STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87	PDF
Untitled Abstract: No abstract text available Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power	Original	STPSC806 O-220AC STPSC806D	PDF

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STPSC Datasheets (106)

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STPSC1006D

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STPSC606D

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STPSC806

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STPSC1006D

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STPSC1006D

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