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Untitled Abstract: No abstract text available Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material	Original	PDF	STPSC12H065C O-220AB STPSC12H065CT DocID024809

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

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STPSC12H065C O-220AB STPSC12H065CT DocID024809