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    STP8N50 Search Results

    STP8N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STP8N50D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP8N50XI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP8N50XI Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STP8N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    FREDFETs

    Abstract: No abstract text available
    Text: SELECTION GUIDE - FREDFETs V BR DSS (V ) 500 500 500 500 500 Ì* Id max (A) Type Package (Q ) 0.450 0.650 0.850 0.850 1.500 6.50 5.00 4.40 4.40 2.50 STH13N50D STH10N50D STH9N50D STP8N50D STP5N50D TO-218 TO-218 TO-218 TO-220 TO-220 ¿V 1D(max) Plot (A) (W)


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    PDF O-218 O-220 O-220 STH13N50D STH10N50D STH9N50D STP8N50D STP5N50D FREDFETs

    ISOWATT221

    Abstract: stp8n50xi
    Text: SGS-THOMSON STP8N50XI [M S^ OiLiCT[RMD(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP8N 50XI 500 V I R d s ( o ii 0 .8 5 I LI Id 4 .5 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF STP8N50XI ISOWATT221 ISOWATT221 stp8n50xi

    STP8N50D

    Abstract: STP8N50
    Text: S i SGS-THOMSON STP8N50D iH J N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE V dss STP8N50D . R d S o h 'D 0.85 U 500 V 8 A POWER MOS TRAN SISTO R WITH FAST RECOVERY BULK DIODE: CO M PLETE DIODE SPECIFICATIO N PARTICULARLY SUITABLE FOR BRIDGE


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    PDF STP8N50D O-220 STP8N50D STP8N50

    STP8N50

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 £ Z T * 7# QD4b33b SD Ì • SGTH S G S -T H O M S O N [M tM tiL IO T « ! S T P 8 N 5 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP8N50XI . ■ . . . ■ . dss 500 V R D S {on Id < 0.85 n 4.5 A TYPICAL RDS on) = 0.74 Q AVALANCHE RUGGED TECHNOLOGY


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    PDF QD4b33b STP8N50XI 150aC STP8N50

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


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    PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V