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    STN2NE10 Search Results

    STN2NE10 Datasheets (6)

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    STN2NE10 STMicroelectronics N - channel 100 V - 0.33 " - 2 A - SOT-223 STripFET Power MOSFET Original PDF
    STN2NE10 STMicroelectronics N - CHANNEL 100V - 0.33 ? - 2A - SOT-223 STripFET POWER MOSFET Original PDF
    STN2NE10L STMicroelectronics N-CHANNEL 100V - 0.33Ohm - 2A SOT-223 STripFET POWER MOSFET Original PDF
    STN2NE10L STMicroelectronics N-channel 100V - 0.33 Ohm -2A - SOT-223 Original PDF
    STN2NE10L STMicroelectronics N-Channel 100 V - 0.33 ohm - 2 A SOT-223 STripFET Power MOSFET Original PDF
    STN2NE10L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STN2NE10 Datasheets Context Search

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    P008B DIODE

    Abstract: P008B STN2NE10L
    Text: STN2NE10L N-CHANNEL 100V - 0.33Ω - 2A - SOT-223 STripFET Power MOSFET Package General features Type VDSS RDS on ID STN2NE10L 100 V <0.4 Ω 1.8 A 2 • EXCEPTIONAL dv/dt CAPABILITY ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ LOW THRESHOLD DRIVE


    Original     		STN2NE10L OT-223 OT-223 P008B DIODE P008B STN2NE10L PDF

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20 PDF

    STN2NE10L

    Abstract: No abstract text available
    Text: STN2NE10L N-CHANNEL 100V - 0.33Ω - 2A SOT-223 STripFET POWER MOSFET TYPE STN2NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 1.8 A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10L OT-223 STN2NE10L PDF

    Untitled

    Abstract: No abstract text available
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		STN2NE10L OT-223 OT-223 STN2NE10L PDF

    Power MOSFET SOT-223

    Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		STN2NE10L OT-223 Power MOSFET SOT-223 st MARKING E4 JESD97 N2NE10L STN2NE10L PDF

    STN2NE10L

    Abstract: P008B DIODE e4 sot223
    Text: STN2NE10L  N-CHANNEL 100V - 0.33Ω - 2A SOT-223 STripFET POWER MOSFET TYPE STN2NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 1.8 A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10L OT-223 STN2NE10L P008B DIODE e4 sot223 PDF

    STN2NE10L

    Abstract: No abstract text available
    Text: STN2NE10L N - CHANNEL 100V - 0.33 i l - 2A - SOT-223 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE STN 2N E10L • . . . . V dss R dS oii Id 100 V < 0 .4 a 2 A TYPICAL RDS(on) = 0.33 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    OCR Scan     		STN2NE10L OT-223 OT-223 STN2NE10L PDF

    JESD97

    Abstract: N2NE10L STN2NE10L
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		STN2NE10L OT-223 JESD97 N2NE10L STN2NE10L PDF

    STN2NE10

    Abstract: china schematic diagram
    Text: STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN2NE10 100 V < 0.4 Ω 2A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10 OT-223 STN2NE10 china schematic diagram PDF

    STN2NE10

    Abstract: e4 sot223
    Text: STN2NE10  N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN2NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 2 A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10 OT-223 STN2NE10 e4 sot223 PDF

    STN2NE10L

    Abstract: No abstract text available
    Text: STN2NE10L N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN2NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 2A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10L OT-223 STN2NE10L PDF

    STN2NE10

    Abstract: P008B DIODE
    Text: STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN2NE10 100 V < 0.4 Ω 2A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10 OT-223 STN2NE10 P008B DIODE PDF

    stu9nc80zi

    Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
    Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L


    Original     		STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    CTX01-15275

    Abstract: GOERTZEL ALGORITHM fsk SOURCE CODE SI3201-GS Si3201-KS BCM11xx dtmf fsk caller id BCM33XX BCM3351 BCM63 ProSLIC
    Text: Si3230 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		Si3230 Hz/16 CTX01-15275 GOERTZEL ALGORITHM fsk SOURCE CODE SI3201-GS Si3201-KS BCM11xx dtmf fsk caller id BCM33XX BCM3351 BCM63 ProSLIC PDF

    SI3216-FT

    Abstract: 5551 transistor Si3216
    Text: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


    Original     		Si3216 16-bit SI3216-FT 5551 transistor Si3216 PDF

    Si3201-gs

    Abstract: transistor SMD 3906
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R I N G I N G / B A T T E R Y VO L TAG E G ENERATION Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		Si3210) Hz/16 Si3201-gs transistor SMD 3906 PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    SE 7889

    Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
    Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


    Original     		Si3216 16-bit SE 7889 Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909 PDF

    SI3215

    Abstract: SI3201-FS bjt 2n2222 data sheet fairchild coiltronic Si3201-KS Si3211 SI3215M Si3216 GR-909 Si3201
    Text: Si3215 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		Si3215 SI3215 SI3201-FS bjt 2n2222 data sheet fairchild coiltronic Si3201-KS Si3211 SI3215M Si3216 GR-909 Si3201 PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3215 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		Si3215 16-bit PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF