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    STD75 Search Results

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    STD75 Price and Stock

    Visual Communications Company STD_750_BLK

    LED HOLDER TRI-LEAD - BLACK
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    DigiKey STD_750_BLK Bulk
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    Onlinecomponents.com STD_750_BLK 6,378
    • 1 $0.894
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    • 100 $0.652
    • 1000 $0.279
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    Master Electronics STD_750_BLK 6,378
    • 1 $0.894
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    • 100 $0.652
    • 1000 $0.279
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    STMicroelectronics STD75N3LLH6

    MOSFET N-CH 30V 75A DPAK
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    DigiKey STD75N3LLH6 Reel
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    Bristol Electronics STD75N3LLH6 55,000
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    Quest Components STD75N3LLH6 44,000
    • 1 $2.448
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    • 100 $2.448
    • 1000 $0.918
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    Verivolt LLC ENTUBE-SE-STD-(750V)

    TRANSDUCER VOLTAGE DIVIDER
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    DigiKey ENTUBE-SE-STD-(750V) Box 1
    • 1 $252
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    Verivolt LLC ENTUBE-SE-STD-(750V-5V)

    VOLTAGE DIVIDER
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    DigiKey ENTUBE-SE-STD-(750V-5V) Box 1
    • 1 $260.88
    • 10 $260.88
    • 100 $260.88
    • 1000 $260.88
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    Verivolt LLC ENTUBE-SE-STD-(750V-2V)

    VOLTAGE DIVIDER
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    DigiKey ENTUBE-SE-STD-(750V-2V) Box 1
    • 1 $260.88
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    • 100 $260.88
    • 1000 $260.88
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    STD75 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD75 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    STD_750_BLK Visual Communications Company LEDs - Spacers, Standoffs, Optoelectronics, LED HDWR STANDOFF 3MM/5MM BLACK Original PDF
    STD75N3LLH6 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 75A DPAK Original PDF

    STD75 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    75N3LLH6

    Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
    Text: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V


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    STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S STU75N3LLH6 75N3LLH6 STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint PDF

    75n3l

    Abstract: 75N3LLH6 STD75N3L diode bym stu75n3 STP75N3LLH6
    Text: STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features TAB Order codes VDSS STU75N3LLH6 TAB ID 3 < 0.0055 Ω STD75N3LLH6 STP75N3LLH6 RDS on max 1


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    STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S O-220, STD75N3LLH6 STU75N3LLH6 O-220 75n3l 75N3LLH6 STD75N3L diode bym stu75n3 PDF

    75n3l

    Abstract: STU75N3LLH6 STD75N3LLH6 STD75N3L 75N3LLH6 75n3 std75n STD75N3LL
    Text: STD75N3LLH6 STU75N3LLH6 N-channel 30 V, 0.0045 Ω, 75 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.006 Ω 75 A 3 3 2 • RDS(on) * Qg industry benchmark


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    STD75N3LLH6 STU75N3LLH6 AM01474v1 75n3l STU75N3LLH6 STD75N3L 75N3LLH6 75n3 std75n STD75N3LL PDF

    1N5062

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


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    1N5059---1N5062 DO-41 STD-750 1N5062 PDF

    LTL-4294-01

    Abstract: No abstract text available
    Text: LITE-ON ELECTRONICS, INC. Property of Lite-On Only Features * Lead Pb free product – RoHS compliant. * High Intensity. * Popular T-1 3/4 diameter Package. * Selected minimun intensities. * General purpose leads. * Reliable and rugged. Package Dimensions


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    LTL-4294-012 BNS-OD-C131/A4 MIL-STD-202F MILSTD-750D MIL-STD883D 10mins STD-750D LTL-4294-01 PDF

    EIAJ ED-4701-1

    Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
    Text: [3] 東芝半導体製品の品質・信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する


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    M65BJ TC5117405BST TC51V16165BFT TC5118165BFT 65deg C/150deg 300cycles) TC5117405BSJ TC514265DJ TC5118165BJ EIAJ ED-4701-1 tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB PDF

    Untitled

    Abstract: No abstract text available
    Text: RGP20A-RGP20J Fast Recovery Rectifiers VOLTAGE RANGE: 50 - 600 V CURRENT: 2.0 A Features DO - 15 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0


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    RGP20A-RGP20J DO-15 STD-750 PDF

    e4571

    Abstract: w1754 CM81-00201-1E softune CM81-00201-1E F2MC-16 INC896 INC907 INC911 OPT907 OPT911
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM81-00201-1E FR FAMILY F2MC FAMILY 32/16/8-BIT MICROCONTROLLER SOFTUNE ASSEMBLER MANUAL PREFACE • Objectives and Intended Readership This manual describes the functions and operations of the Fujitsu Softune Assembler operating


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    CM81-00201-1E 32/16/8-BIT Windows95/NT. family/FFMC-16 o211-8588, D-63303 e4571 w1754 CM81-00201-1E softune CM81-00201-1E F2MC-16 INC896 INC907 INC911 OPT907 OPT911 PDF

    F2MC-16LX assemble

    Abstract: IEEE-649
    Text: FUJITSU SEMICONDUCTOR CM41-00202-1E CONTROLLER MANUAL F2MCTM-16 FAMILY SOFTUNETM ASSEMBLER MANUAL for V3 F2MCTM-16 FAMILY SOFTUNETM ASSEMBLER MANUAL for V3 FUJITSU LIMITED PREFACE • Purpose of this manual and target readers This manual describes the functions and operations of the Fujitsu SOFTUNE Assembler operating on


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    CM41-00202-1E F2MCTM-16 F2MC-16 F2MC-16LX assemble IEEE-649 PDF

    BA157

    Abstract: BA158 BA159 BA159D
    Text: BL GALAXY ELECTRICAL BA157 Z - - - BA159(Z) VOLTAGE RANGE: 400 - 1000 V CURRENT: 1.0 A FAST RECOVERY RECT IFIER FEATURES DO - 41 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol


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    BA157 BA159 DO-41 STD-750 TJ-25 BA158 BA159D PDF

    W1346

    Abstract: 20/F2MCTM-16 fcc907s
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00328-1EMCTM-16 FAMILY 16-BIT MICROCONTROLLER SOFTUNETM C COMPILER MANUAL F²MCTM-16 FAMILY 16-BIT MICROCONTROLLER SOFTUNETM C COMPILER MANUAL FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers


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    CM42-00328-1E MCTM-16 16-BIT W1346 20/F2MCTM-16 fcc907s PDF

    DO-213AB

    Abstract: EGL1J
    Text: BL GALAXY ELECTRICAL EGL1A - - - EGL1J VOLTAGE RANGE: 50 - 600 V SURFACE MOUNT RECTIFIER CURRENT: 1.0 A FEATURES ◇ Plastic package has underwriters laboratories DO - 213AB flammability classification 94V-0 ◇ Glass passivated chip junction ◇ For surface mount applications


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    213AB DO-213AB STD-750 EGL1J PDF

    sblb

    Abstract: 80CT 2530CT 2535CT 2540CT 2545CT SBLB2530CT
    Text: BL GALAXY ELECTRICAL SBLB2530CT - - - SBLB25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 25 A SCHOTTKY BARRIER RECTIFIER FEATURES D2PAK Metal-Semiconductor junction with guard ring Epitaxial construction 0.190 4.83 0.172(4.37) 0.421(10.69) 0.380(9.65) Low forward voltage drop,low switching losses


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    SBLB2530CT SBLB25100CT SBLB2530CT-SBLB2545CT SBLB2580CT-SBLB25100CT SBLB2550CT-SBLB2560CT sblb 80CT 2530CT 2535CT 2540CT 2545CT PDF

    3060ct

    Abstract: 3045CT SBL3030CT SBL30100C 30100CT
    Text: BLGALAXY ELECTRICAL SBL3030CT - - - SBL30100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability


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    SBL3030CT SBL30100CT O-220AB O-220AB STD-750 08ounce, SBL3030CT-SBL3045CT SBL3080CT-SBL30100CT SBL3050CT-SBL3060CT 3060ct 3045CT SBL30100C 30100CT PDF

    2N1358

    Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
    Text: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments


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    MIL-S-19500/122C MIL-S-19500/122B 2N1358 MIL-S-19500/122C 2N1358 pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011 PDF

    sega mega drive

    Abstract: phct sega mega drive RF IRH7230 IRH8230
    Text: Data Sheet No. PD-9.678A INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRH7S30 HEXFET TRANSISTORS Q „ IRH8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETk demonstrate excellent threshold voltage stability and breakdown


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    IRH7S30 1RH7230 IRH8230 d03es 1x10s IRH7230, sega mega drive phct sega mega drive RF IRH7230 PDF

    Untitled

    Abstract: No abstract text available
    Text: HEIjJLETT-PACKARDn CMPNTS 2DE D H 44475Ö4 OOQSSSfl 4 E9 T - Low N oise Transistors HXTR-6001 Chip * 2N6617 HXTR-6101, TX Technical Data 2N6742 ( h x t r - 6102, t x and TXV 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Features D escription


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    HXTR-6001 2N6617 HXTR-6101, 2N6742 2N6618 HXTR-6103, 2N6743 HXTR-6104, MIL-S-19500, PDF

    1N3190

    Abstract: 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189
    Text: MIL SPECS | 00DQ15S DODlOTb b I MIL-S-19500/155E NAVY NOTICE 1 25 September 1986 I NOTICE I |OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENEERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES MIL-S-19500/155E(NAVY), dated 2 July 1974, has been reviewed & determined to be valid


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    00DD15S MIL-S-19500/155E 1N3189, 1N3190, 1N3191, 000D1HS 1QE17 MIL-S-19500/155D 1N3190 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189 PDF

    IN457A

    Abstract: IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3027 2N3028
    Text: MIL SPECS I C | 000D15S QDD3SE7 b | Ml L-S - 195G0/4&#39;!9 £l AMiiNDMclS i- i 21 May 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N3027 THROUGH 2N 3032, AND TX2N3027 THROUGH TX2N3032 This Amendment forms o port of M ilitary


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    95GGA 2N3027 2N3032, TX2N3027 TX2N3032 L-S-19500/419 MIL-STD-1276, MIL-STD-1276) 5961-A230 IN457A IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3028 PDF

    MB90P263

    Abstract: SP3306 SQFP100 intel INTEL DX2 QFP-120 motorola LIB902 MC-16LX/FX
    Text: 16-Bit Proprietary PMC-16Ü16LX/16F Family • Development Environment Features 5 Enhancement the development efficiency • Provides integrated total environment Development manager, SOFTUNE for Windows3.1. (operates also, Windows95/NT3.51) Totally support the repeated coding, compiler, debugging, and etc.


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    16-Bit PMC-16 16LX/16F Windows95/NT3 REAiLOS/907) 1/95/NT3 SuppoROM-100QF-32DP-FMC16F ROM-100QF-32DP-FMC16L* MB90P263 SP3306 SQFP100 intel INTEL DX2 QFP-120 motorola LIB902 MC-16LX/FX PDF

    CY7C601

    Abstract: CY7C600 7C600 CY7C157A
    Text: • - ^ SEMICONDUCTOR Introduction to RISC and com piler design. A t each step, com puter architects must ask: to what extent does a feature improve o r degrade perform ance and is it w orth the cost of im plem entation? Each additional feature, no m atter how useful it is in an isolated instance, makes all others p er­


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    CY7C600 7C600 64-kbyte 32-byte CY7C604A 16-bit CY7C601 CY7C157A PDF

    H209

    Abstract: H214
    Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


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    IRHM7150 IRHM8150 SN7S68 JANSHSN7S68 1x106 1x105 IRHM71500 IRHM7150U O-254 H209 H214 PDF

    A720 transistor

    Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
    Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.


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    2N3906 MIL-S-19500/530 MIL-S-19500. MIL-S-19500 5961-A720) A720 transistor transistor A720 4392 ic equivalent 2N3906 350MW PDF

    SE 442

    Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
    Text: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­


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    MlL-S-19500/99E L-S-19500/99D 2N696 2N697 500/99D. SE 442 MARKING M1W TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent PDF