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    DELC 2N1358

    15 A, PNP, Ge, POWER TRANSISTOR, TO-36
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    RCA 2N1358

    15 A, PNP, Ge, POWER TRANSISTOR, TO-36
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    15 A, PNP, Ge, POWER TRANSISTOR, TO-36
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    2N1358 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1358 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1358 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1358 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1358 Unknown PNP Germanium Transistor, High Power Scan PDF
    2N1358 Unknown Vintage Transistor Datasheets Scan PDF
    2N1358 Unknown Vintage Transistor Datasheets Scan PDF
    2N1358 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1358 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1358 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1358 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1358 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1358 Unknown GE Transistor Specifications Scan PDF
    2N1358 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1358 RCA RCA Transistor and Diode Data Scan PDF
    2N1358 Semitron Germanium Power Transistors Scan PDF
    2N1358 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N1358A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1358A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1358A Unknown Vintage Transistor Datasheets Scan PDF
    2N1358A Unknown Vintage Transistor Datasheets Scan PDF

    2N1358 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1358

    Abstract: bjt specifications power BJT PNP TRANSISTORS BJT list
    Text: 2N1358 Ge PNP Power BJT 17.80 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 1 of 2 Enter Your Part # Home Part Number: 2N1358 Online Store 2N1358 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1358 2N1358 com/2n1358 bjt specifications power BJT PNP TRANSISTORS BJT list

    Untitled

    Abstract: No abstract text available
    Text: 2N1358+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0mx @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12


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    PDF 2N1358 Freq100k time15uà StyleTO-36

    2N1358

    Abstract: No abstract text available
    Text: 2N1358 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0mx @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12


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    PDF 2N1358 Freq100k time15uà StyleTO-36

    TO36 package

    Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A


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    PDF 2N173 2N1358 2N174A 2N1549 MP1549 2N1549A 2N677 2N1553 2N1553A MP1553 TO36 package 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium

    2N1358

    Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
    Text: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments


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    PDF MIL-S-19500/122C MIL-S-19500/122B 2N1358 MIL-S-19500/122C 2N1358 pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011

    transistor military

    Abstract: 2N1358
    Text: h/ ttt _o_iflKnn/ioori X O O \-> J L Y U L A J - k j - A <7 U U U / A TV/TT?‘M T \ A/TTT XT TP x1 < n . 1 T A A J 1 1 x y X T 1 X J J l ^ JL 21 March 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTOR. PNP. GERMANIUM, HIGH-POWER TYPE 2N1358 This amendment forms a part of Military Specification MIL-S-19500/122C,


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    PDF 2N1358 MIL-S-19500/122C, transistor military 2N1358

    TI3027

    Abstract: TI3028 2N301B 2SB477 TI-3030 B1368B MT41a 2SB205 nkt501 MP1535A
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. 200kSA ADY22 11Ou0 250kf ADY23 250kt ADY24 MHT1902 TI3027 TI3028 2N301B 2SB477 TI-3030 B1368B MT41a 2SB205 nkt501 MP1535A

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


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    PDF 2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N1146

    Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
    Text: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V


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    PDF 2N278 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N278 2N677 2N1146 GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 TO36 2N1031B 2N1982

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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