trc 9500
Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C EDI8F8513C
Text: EDI8F8513C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static
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EDI8F8513C
512Kx8
EDI8F8513C
4096K
128Kx8
the128Kx8
EDI8F8513B20M6C
trc 9500
EDI8F8513B20M6C
EDI8F8513B25M6C
EDI8F8513B35M6C
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cmos static ram 1mx8 5v
Abstract: 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C
Text: White Electronic Designs EDI8F81026C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION The EDI8F81026C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. 1Mx8 bit CMOS Static RAM • Access Times 20 through 35ns
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EDI8F81026C
EDI8F81026C
512Kx8
cmos static ram 1mx8 5v
1Mx8 bit Low Power CMOS Static RAM
1m x 8 sram
EDI8F81026C20M6C
EDI8F81026C20M6I
EDI8F81026C35M6C
EDI8F81026C85M6C
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1Mx8 bit Low Power CMOS Static RAM
Abstract: No abstract text available
Text: EDI8F81025C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION n 1Mx8 bit CMOS Static RAM The EDI8F81025C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Access Times 70 through 100ns
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EDI8F81025C
100ns
EDI8F81025LP)
EDI8F81025C
512Kx8
EDI8F81025C70B6C
EDI8F81025C85B6C
1Mx8 bit Low Power CMOS Static RAM
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4946
Abstract: CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER
Text: Cypress Semiconductor Product/Technology Qualification Report QTP# 000301 VERSION 1.0 May, 2000 4 Meg Asynchronous RAM R52D-5R Technology, Fab 4 CY7C1041B 256K x 16 Static RAM CY7C1046B 1M x 4 Static RAM CY7C1049B 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
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R52D-5R
CY7C1041B
CY7C1046B
CY7C1049B
CY7C149B
CY7C1049B-VC
4946
CY7C1041B
CY7C1046B
CY7C1049B
JESD22
MIL-STD-883 PRESSURE COOKER
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14553
Abstract: EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
Text: EDI8F81026C 1Mb x 8 Static RAM CMOS Module FEATURES DESCRIPTION 1M x 8 bit CMOS Static RAM The EDI8F81026C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Access Times 20 thru 35ns
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EDI8F81026C
EDI8F81026C
512Kx8
EDI8F81026C20M6C
EDI8F81026C25M6C
EDI8F81026C35M6C
EDI8F81026C25M6C
14553
EDI8F81026C20M6C
EDI8F81026C25M6I
EDI8F81026C35M6C
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EDI8F81025C100B6C
Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C EDI8F81025LP85B6C
Text: EDI8F81025C 1 M x 8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION 1M x 8 bit CMOS Static RAM The EDI8F81025C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Access Times 70 through 100ns
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EDI8F81025C
EDI8F81025C
512Kx8
100ns
EDI8F81025LP)
EDI8F81025C70B6C
EDI8F81025C85B6C
EDI8F81025C100B6C
EDI8F81025C100B6C
EDI8F81025C70B6C
EDI8F81025C85B6C
EDI8F81025LP70B6C
EDI8F81025LP85B6C
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EDI8F32512V
Abstract: EDI8F32512V15MMC EDI8F32512V15MZC EDI8F32512V20MMC EDI8F32512V25MMC
Text: EDI8F32512V 512Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 512Kx32 bit CMOS Static RAM The EDI8F32512V is a high speed 16Mb Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in SOJ packages on an epoxy
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EDI8F32512V
512Kx32
EDI8F32512V
512Kx8
8F32512V
EDI8F32512V15MMC
EDI8F32512V20MMC
EDI8F32512V25MMC
EDI8F32512V15MMC
EDI8F32512V15MZC
EDI8F32512V20MMC
EDI8F32512V25MMC
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Untitled
Abstract: No abstract text available
Text: EDI9F37512C 512Kx37 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION 512Kx37 bit CMOS Static RAM The EDI9F37512C is a high speed 20 megabit Static RAM module organized as 512K words x 37 bits. This module is constructed from five 512Kx8 Static RAMs in TSOP packages on an epoxy laminate
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EDI9F37512C
512Kx37
EDI9F37512C
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9F37512C
EDI9F37512C45MMC
EDI9F37512C55MMC
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EDI8F32512V
Abstract: EDI8F32512V15MMC EDI8F32512V15MZC EDI8F32512V20MMC EDI8F32512V25MMC 8F32512V
Text: EDI8F32512V 512Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION 512Kx32 bit CMOS Static RAM The EDI8F32512V is a high speed 16Mb Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in SOJ packages on an epoxy
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512Kx32
EDI8F32512V
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8F32512V
EDI8F32512V15MMC
EDI8F32512V20MMC
EDI8F32512V25MMC
EDI8F32512V15MMC
EDI8F32512V15MZC
EDI8F32512V20MMC
EDI8F32512V25MMC
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Untitled
Abstract: No abstract text available
Text: EDI9F37512C 512Kx37 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 512Kx37 bit CMOS Static RAM The EDI9F37512C is a high speed 20 megabit Static RAM module organized as 512K words x 37 bits. This module is constructed from five 512Kx8 Static RAMs in TSOP packages on an epoxy laminate
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EDI9F37512C
512Kx37
EDI9F37512C
512Kx8
FO-00342R1
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8C32512CA m ELECTRONIC DESIGNS, INC 512Kx32 Static Ram 512Kx32 High Speed Static RAM Features The EDI8C32512CA, a high speed, high performance, four 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, Random Access Memory
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EDI8C32512CA
512Kx32
EDI8C32512CA,
512Kx8
EDI8C32512LP
EDI8C32512CA20JM
EDI8C32512CA20JI
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Untitled
Abstract: No abstract text available
Text: SJEDI, EDI8C32512CA m EL£CTRONC 0CSI6NS. N C 512Kx32 Static Ram 512Kx32 Highspeed Static RAM iFeatures The EDI8C32512CA, a high speed, high performance, four 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, Random Access Memory
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EDI8C32512CA
512Kx32
EDI8C32512LP
EDI8C32512CA,
512Kx8
indepe512LPA45JM
EDI8C32512LPA55JM
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F8513C 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or Static RAMs mounted on a multi-layered Random Access Memory epoxy laminate FR4 substrate.
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EDI8F8513C
512Kx8
EDI8F8513C
4096K
128Kx8
the128Kx8
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Untitled
Abstract: No abstract text available
Text: m x EDI8C16512CA m ELECTRONIC DESIGN N C 512Kx16 Static Ram PRELIMINARY 512Kx16 CMOS, High Speed Static RAM Features The EDI8C16512CA, a high speed, high performance, 8 512Kx16 bit CMOS Static megabit density Static RAM organized as 512Kx16 bits, contains two 512Kx8 SRAMs.
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EDI8C16512CA
512Kx16
EDI8C16512CA,
512Kx8
EDI8C16512LPA55JM
EDI8C16512CA20JM
EDI8C16512CA20JI
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trc 9500
Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C
Text: ^EDI E D I8F 8513C 512Kx8 Static Ram ELECTRONIC DESIGNS. INC 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or Static RAMs mounted on a multi-layered Random Access Memory epoxy laminate FR4 substrate.
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EDI8F8513C
512Kx8
EDI8F8513C
4096K
128Kx8
the128Kx8
EDI8F8513B20M6C
trc 9500
EDI8F8513B25M6C
EDI8F8513B35M6C
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Untitled
Abstract: No abstract text available
Text: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static
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EDI8M32512C
512Kx32
100ns
EDI8M32512C,
512Kx8
EDI8M32512LP70GB
EDI8M32512LP85GB
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STATIC RAM 2114
Abstract: RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116
Text: EDI8M32512CA ^EtECTBOMC E D L DEStGNS WC. m 512Kx32 Static Ram 512Kx32 CMOS, High Speed Static RAM Features The EDI8M32512CA, a high speed, high performance, 16 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs.
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EDI8M32512CA
512Kx32
EDI8M32512CA,
512Kx8
EDI8M32512LPA20GB
EDI8M32512LPA20GI
10x100=
STATIC RAM 2114
RAM 2114
2114 static ram ic
EDI8M32512CA
RAM 2116
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512KX8-SRAM
Abstract: No abstract text available
Text: ^EDI EDI8C32512CA M ELECTRONIC DESIGNS. INC 512Kx32 Static Ram 512Kx32 Highspeed Static RAM Features The EDI8C32512CA, a high speed, high performance, sixteen megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs mounted in a package.
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EDI8C32512CA
512Kx32
EDI8C32512LP
EDI8C32512CA,
512Kx8SRAMs
provided32512LPA20EQ
EDI8C32512LPA25EQ
512KX8-SRAM
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512Kx8 bit Low Power CMOS Static RAM
Abstract: No abstract text available
Text: ^EDI EDI8C32512CA M ELECTRONIC DESIGNS. INC 512Kx32 Static Ram 512Kx32 Highspeed Static RAM Features The EDI8C32512CA, a high speed, high performance, four megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs mounted in a package.
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18C32512CA
512Kx32
EDI8C32512LP
68leadJLCC,
EDI8C32512CA20JM
EDI8C32512CA20JI
01581USA
EDI8C32512CA
512Kx8 bit Low Power CMOS Static RAM
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Untitled
Abstract: No abstract text available
Text: ^EDL EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module \Features The EDI8F8512C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or 256Kx4 high speed Random Access Memory mounted on a multi-layered epoxy laminate (FR4) sub
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512Kx8
EDI8F8512C
512KxS
100ns
EDI8F8512LP
EDI8F8512C
4096K
128Kx8
256Kx4
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8C32512CA m ELECTRONIC DESIGNS, INC 512Kx32 Static Ram 512Kx32 Highspeed Static RAM Features The EDI8C 32512C A, a high speed, high perform ance, 512Kx32 bit CMOS Static sixteen Random Access Memory m egabit density Static RAM organized as 512Kx32 bits, contains fou r 512Kx8 SRAM s mounted in
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EDI8C32512CA
512Kx32
32512C
512Kx8
EDI8C32512LP
asynchr512LPA35EQ
EDI8C32512CA45EQ
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module iF eatures The EDI8F8512C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or 256Kx4 high speed Random Access Memory mounted on a multi-layered epoxy laminate (FR4) sub
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EDI8F8512C
512KxS
512Kx8
100ns
I8F8512LP
EDI8F8512C
4096K
128Kx8
256Kx4
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EDI8C32128C45GM
Abstract: No abstract text available
Text: W D EDI8C32128C \ 128Kx32 Static Ram ELECTRONIC DESIGNS, INC. 128Kx32 Highspeed Static RAM Features The EDI8C32128C, a high speed, high performance, four 128Kx32 bit CMOS Static megabit density Static RAM organized as 128Kx32 bits, Random Access Memory •
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EDI8C32128C
128Kx32
EDI8C32128LP
EDI8C32128C20GM
EDI8C32128C20GI
040x45
BC3212BC
EDI8C32128C45GM
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IC 2822
Abstract: IDT7M4048 7M40 ex 2822 cs107
Text: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CMOS Static RAM module constructed on a co-fired ceramic substrate
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IDT7M4048
32pin,
IDT7M4048
32-pin
MIL-STD-883,
7M4048
00212b]
IC 2822
7M40
ex 2822
cs107
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