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    STACKED 4MB NOR FLASH Search Results

    STACKED 4MB NOR FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC6803HG-2#TRPBF Analog Devices Multicell Bat Stack Mon Visit Analog Devices Buy
    LTC6803IG-1#PBF Analog Devices Multicell Bat Stack Mon Visit Analog Devices Buy
    LTC6803IG-1#3ZZPBF Analog Devices Multicell Bat Stack Mon Visit Analog Devices Buy
    LTC6803HG-1#TRPBF Analog Devices Multicell Bat Stack Mon Visit Analog Devices Buy
    LTC6803HG-3#PBF Analog Devices Multicell Bat Stack Mon Visit Analog Devices Buy

    STACKED 4MB NOR FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ARM Cortex-A8 StackableUSB Pico-ITX Computer SBC5651 Features X X X X X X ARM Cortex-A8 processor, 800MHz 512MB SDRAM, 4GB Flash, 4MB SPI NOR Flash Power Options: ‚ Power-through-USB ‚ Single cell Li-Ion battery ‚ StackableUSB ‚ Terminal block LCD touchscreen support


    Original     		PDF SBC5651 800MHz 512MB SBC5651 MX515 800MHz. 51OPT22 5651OPT28

    MB84VR5E3J1A1

    Abstract: No abstract text available
    Text: 63 &,$/ ($785( 6(&7,21  0%95(-$0%/5(-$ ‡ ‡ ‡ 3-Chip Stacked MCP with 64 M-Bit NOR-Type Flash Memory,16 M-Bit Mobile FCRAM , and 4 M-Bit SRAM: MB84VR5E3J1A1/ MB84LR5E3J1A1 ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡


    Original     		PDF MB84VR5E3J1A1/ MB84LR5E3J1A1 MB84VR5E3J1A1

    TWR1650

    Abstract: 82C55AC SBC1652 Cortex-A8 "NOR Flash" 4MB SBC1651 spi flash 1gb SBC1651-ET 16C550 SBC1652-ET
    Text: i.MX515 ARM Cortex-A8 Tower Computer Module TWR1650 Features The TWR1650 is an i.MX515 evaluation module boasting a subset of features common to an industrial-grade single board computer. Featuring an 800MHz ARM Cortex-A8 CPU, the TWR1650 delivers the performance


    Original     		PDF MX515 TWR1650 800MHz 512MB 10/100BASE-T TWR1650 800MHz 82C55AC SBC1652 Cortex-A8 "NOR Flash" 4MB SBC1651 spi flash 1gb SBC1651-ET 16C550 SBC1652-ET

    Untitled

    Abstract: No abstract text available
    Text: i.MX515 ARM Cortex-A8 Tower Computer Module TWR1650 Features The TWR1650 is an i.MX515 evaluation module boasting a subset of features common to an industrial-grade single board computer. Featuring an 800MHz ARM Cortex-A8 CPU, the TWR1650 delivers the performance


    Original     		PDF MX515 TWR1650 800MHz 512MB 10/100BASE-T 10/100BASE-T TWR1650 800MHz

    Atmel part numbering

    Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
    Text: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties


    Original     		PDF CRNORFLASH1005 Atmel part numbering FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd

    MSA1020

    Abstract: sc 6700 Mitsubishi flash
    Text: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)


    Original     		PDF L-61103-0A 40ms/Block 14mm2 11mm2 L-61104-0A MSA1020 sc 6700 Mitsubishi flash

    A0-A21

    Abstract: J-STD-020B M36W0R6050T0 M69AR048B 26-MAR-2004 8811h
    Text: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •


    Original     		PDF M36W0R6050T0 M36W0R6050B0 M36W0R6050T0: 8810h M36W0R6050B0: 8811h A0-A21 J-STD-020B M36W0R6050T0 M69AR048B 26-MAR-2004 8811h

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    e2p 25

    Abstract: M36W0R6050T0
    Text: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •


    Original     		PDF M36W0R6050T0 M36W0R6050B0 M36W0R6050T0: 8810h M36W0R6050B0: 8811h e2p 25

    BCM2722

    Abstract: videocore mp4 player circuit diagram spi master uart mp4 player chip 16215 lcd VGA camera i2c
    Text: BCM2722 HIGH-PERFORMANCE MOBILE MULTIMEDIA PROCESSOR SUMMARY OF BENEFITS FEATURES • Based on the VideoCore®II processing engine, the BCM2722 is • Very low power • MPEG-4 encode from only 10 mW • CIF MPEG-4 encode @ 30 fps: only 38 mW including audio


    Original     		PDF BCM2722 BCM2722 64-polyphony 25-MB 2722-PB01-R videocore mp4 player circuit diagram spi master uart mp4 player chip 16215 lcd VGA camera i2c

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		PDF 128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K

    8811h

    Abstract: flash E2p A0-A21 J-STD-020B M36D0R6040T0 M69AR024B
    Text: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE


    Original     		PDF M36D0R6040T0 M36D0R6040B0 M36D0R6040T0: 8810h M36D0R6040B0: 8811h 8811h flash E2p A0-A21 J-STD-020B M36D0R6040T0 M69AR024B

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH
    Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become


    Original     		PDF BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH

    Untitled

    Abstract: No abstract text available
    Text: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE


    Original     		PDF M36D0R6040T0 M36D0R6040B0 M36D0R6040T0: 8810h M36D0R6040B0: 8811h

    cfi commands

    Abstract: A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0
    Text: M36W0R6030T0 M36W0R6030B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM • SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V


    Original     		PDF M36W0R6030T0 M36W0R6030B0 512Kb 8810h 8811h cfi commands A0-A21 J-STD-020B M36W0R6030B0 M36W0R6030T0

    diode A14A

    Abstract: BIOS 32 Pin PLCC 845 bios chip PLCC 32 intel package dimensions amd 29f040 thermal resistance INTEL FLASH MEMORY DATA SHEET transistor ap 431 tsop 28-LEAD Footprints picture in picture chip psop 1
    Text: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel's Boot Block Flash Memory CHARLES ANYIMI SENIOR TECHNICAL MARKETING ENGINEER December 1995 Order Number: 292178-002 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


    Original     		PDF AP-623 AP-607, AB-57, AB-60, diode A14A BIOS 32 Pin PLCC 845 bios chip PLCC 32 intel package dimensions amd 29f040 thermal resistance INTEL FLASH MEMORY DATA SHEET transistor ap 431 tsop 28-LEAD Footprints picture in picture chip psop 1

    J-STD-020B

    Abstract: M30L0R7000B0 M30L0R7000T0 M36L0R7050B0 M36L0R7050T0 M69AR048B
    Text: M36L0R7050T0 M36L0R7050B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous


    Original     		PDF M36L0R7050T0 M36L0R7050B0 M36L0R7050T0: 88C4h M36L0R7050B0: 88C5h J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7050B0 M36L0R7050T0 M69AR048B

    J-STD-020B

    Abstract: M36W0R7050B0 M36W0R7050T0 M69AR048B
    Text: M36W0R7050T0 M36W0R7050B0 128 Mbit 8Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM


    Original     		PDF M36W0R7050T0 M36W0R7050B0 M36W0R7050T0: 881Eh M36W0R7050B0: 881Fh 54MHz J-STD-020B M36W0R7050B0 M36W0R7050T0 M69AR048B

    Stacked 4MB NOR FLASH & SRAM

    Abstract: m76 symbol M76 switch M29DW323D M76DW52003BA M76DW52003TA
    Text: M76DW52003TA M76DW52003BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot


    Original     		PDF M76DW52003TA M76DW52003BA 32Mbit 256Kb LFBGA73 0020h M76DW52003TA: 225Eh M76DW52003BA: Stacked 4MB NOR FLASH & SRAM m76 symbol M76 switch M29DW323D M76DW52003BA M76DW52003TA

    M29DW324D

    Abstract: M76DW52004TA Stacked 4MB NOR FLASH
    Text: M76DW52004TA M76DW52004BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot


    Original     		PDF M76DW52004TA M76DW52004BA 32Mbit 256Kb LFBGA73 0020h M76DW52004TA: 225Ch M76DW52004BA: M29DW324D M76DW52004TA Stacked 4MB NOR FLASH

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    A0-A21

    Abstract: J-STD-020B M30W0R6500T0 LFBGA88 AI08599
    Text: M30W0R6500T0 96 Mbit 64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories 1.8V Supply, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE


    Original     		PDF M30W0R6500T0 8810h 8814h 54MHz A0-A21 J-STD-020B M30W0R6500T0 LFBGA88 AI08599

    PLCC 32 intel package dimensions

    Abstract: 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET
    Text: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel’s Boot Block Flash Memory December 1996 Order Number: 292178-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF AP-623 AP-607 AB-57 AB-60 PLCC 32 intel package dimensions 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET